Software-defined optical networks (SDONs): a survey

This paper gives an overview of software-defined optical networks (SDONs). It explains the general concepts on software-defined networks (SDNs), their relationship with network function virtualization, and also about OpenFlow, which is a pioneer protocol for SDNs. It then explains the benefits and challenges of extending SDNs to multilayer optical networks, including flexible grid and elastic optical networks, and how it compares to generalized multi-protocol label switching for implementing a unified control plane. An overview on the industry and research efforts on SDON standardization and implementation is given next, to bring the reader up to speed with the current state of the art in this field. Finally, the paper outlines the benefits achieved by SDONs for network operators, and also some of the important and relevant research problems that need to be addressed.     

External force of snake: virtual electric field

Gradient vector flow (GVF) is an external force of snake that overcomes traditional snake's problems: limited capture range and poor convergence to concave boundaries. A new external force with the same properties as the GVF is proposed. The proposed method has much shorter computational time than the GVF.     

A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy

Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metalorganic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2?nm, corresponding to the calculated spacing of a misfit dislocation (2.6?nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.     

BIST/Digital-Compatible Testing of RF Devices Using Distortion Model Fitting

Testing of Radio Frequency (RF) circuits for nonlinearity specifications generally requires the use of multiple test measurements thereby contributing to increased test cost. Prior RF test methods have suffered from significant test calibration effort (training for supervised learners) when using compact tests or from increased test time due to direct specification measurement. On the other hand, due to aggressive technology scaling, there are plenty of digital transistors available that can be used to simplify testing of Analog/Mixed-Signal (AMS) and RF devices. In this paper, an RF test methodology is developed that: (a) allows RF devices to be tested for several distortion specifications using distortion model fitting algorithms in test time comparable to what can be achieved using supervised learning techniques while retaining the accuracy of direct specification measurement, (b) allows multiple RF specifications to be determined concurrently from a single data acquisition and (c) allows digital-compatible testing/BIST to be performed using digital testers or on-chip built in self-test (BIST) circuitry. With regard to (a), a key benefit is that no training of supervised learning algorithm is necessary. The proposed method based on distortion model fitting is shown to give excellent results across common RF performance metrics while providing ~10× improvements in test time compared to previous methods.     

Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni₃Sn and Ni₃Sn₂) and Ni_5.63SnSe₂] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10^?4 Ω cm²) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.     

Electron Holography Studies on Narrow Magnetic Domain Walls Observed in a Heusler Alloy Ni50Mn25Al12.5Ga12.5

Peculiar magnetic domain walls produced in Heusler alloys, which have attracted renewed interest due to their potential application to actuators and spintronic devices, are studied here using electron holography. The observations reveal unexpectedly narrow magnetic domain walls, the width of which showed perfect agreement with that of the antiphase boundaries (APB, e.g., only 3 nm). While the results can be explained by the significant depression of ferromagnetism due to the local chemical disorder, the electron phase shift indicates that ferromagnetic correlation still remains in the APB region.     

Security flaw of authentication scheme with anonymity for wireless communications

Recently, Wu et al. discussed some security flaws of enhanced authentication scheme with anonymity for wireless environments proposed by Lee et al. and showed how to overcome the problems regarding anonymity and backward secrecy. However, in the paper, we will show that Wu et al.?s improved scheme still did not provide user anonymity as they claimed.     

Improved photovoltaic performance by enhanced crystallinity of poly(3-hexyl)thiophene

The packing effects induced by the hydrophilic ethylene glycol oligomer side chains occurred in a P3HT:PC₆₁BM mixture upon the addition of small amounts of BP93 (containing 7 mol% PEGT blocks), leading to an enhanced crystallinity among the P3HT molecules, even in a P3HT:PC₆₁BM blend. The enhanced crystallinity improved the charge transport and current density (8.3–11.1 mA/cm²) and increased the power conversion efficiency (3.1–3.9%) in an organic solar cell.