高精密度液体感光树脂凸版(液体版)的工艺研究

提出一种制作LCD用高精密度网点液体版的方案，通过接近式曝光理论分析和采用特殊的工艺方法，使得网点的浮雕结构合理，获得了高分辨率、高均匀性的网点结构，从而可印刷出不同厚度且膜层均匀的PI定向膜。     

流媒体数据在EGPRS无线接口中的传输问题研究

分析基于EGPRS网络的流媒体传输系统。因为流媒体数据在下行链路上的传输性能取决于系统对无线接口协议中RLC/MAC模块的配置与实现,所以重点研究了实现RLC/MAC协议的技术,如选择性检错重发技术。     

衬底热空穴注入下的薄栅氧化层击穿特性

利用衬底热空穴(SHH)注入技术,分别定量研究了热电子和空穴注入对薄栅氧化层击穿的影响,讨论了不同应力条件下的阈值电压变化.阈值电压的漂移表明是正电荷陷入氧化层中,而热电子的存在是氧化层击穿的必要条件.把阳极空穴注入模型和电子陷阱产生模型统一起来,提出了薄栅氧化层的击穿是与电子导致的空穴陷阱相关的.研究结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡.认为栅氧化层的击穿是一个两步过程.第一步是注入的热电子打断Si一O键,产生悬挂键充当空穴陷阱中心,第二步是空穴被陷阱俘获,在氧化层中产生导电通路,薄栅氧化层的击穿是在注入的热电子和空穴的共同作用下发生的.     

某火炮制退机散热分析

火炮的连续发射使制退机内液体温度不断升高,当温度达到制退液的沸点时,会导致后坐部分复进不到位,从而造成火炮的故障和损坏。针对这个问题建立了某火炮制退机简化模型,运用Ansys/Flotran软件对火炮的制退机进行散热分析,得出制退机的散热规律及温度分布。结果表明,该方法简单可行,构思新颖,为以后选取有较好散热性能的制退机材料提供依据。     

A Distributed Multicast Routing Scheme for Multi-Layered Satellite IP Networks

In this paper, a distributed multicast routing scheme is introduced for multi-layered satellite IP networks, which include GEO, MEO, and LEO layers. This scheme aims to minimize the total cost of multicast trees in the satellite network. Multicast trees are constructed and maintained in the dynamic satellite network topology in a distributed manner. Simulation results are provided to evaluate the performance of the new scheme in terms of end-to-end delay and multicast tree cost.     

基于LCD-SE-IWOA-KELM的短期风电功率区间预测

针对风电功率的不确定性、随机性以及已有的风电功率点预测无法反应其不确定性信息的问题,提出了基于局部特征尺度分解(LCD)-样本熵(SE)和改进鲸鱼优化算法(IWOA)优化核极限学习机(KELM)的短期风电功率区间预测模型。采用LCD分解来降低原始风电功率序列的非平稳性,通过测量各ISC分量的样本熵来重构新的序列以降低过多的分量对预测精度带来的影响,然后分别建立各新序列的区间预测模型,最后将各新序列的预测结果进行叠加获得最终预测结果。采用改进的WOA算法优化核极限学习机的参数。实验仿真表明,文中所提模型能够获得良好的区间预测结果,具有一定的实际意义和应用价值。     

基于VHDL语言的数字电路测试码自动生成

本文提出了一种新的基于VHDL语言的组合数字电路测试码自动生成方法。在VHDL语言描述组合数字电路的基础上,建一VHDL语言的编译器,并输入为描述被测电路的VHDL语言,输出结果为描述被测电路功能的一系列逻辑表达式。针对这些逻辑表达式,本文详细地介绍了一种能直接产生电路测试码的算法。     

施主型界面态引起槽栅PMOSFET性能退化的特征

基于流体动力学能量输运模型 ,对沟道杂质浓度不同的深亚微米槽栅和平面 PMOSFET中施主型界面态引起的器件特性的退化进行了研究 .研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件 ,且电子施主界面态密度对器件特性的影响远大于空穴界面态 .特别是沟道杂质浓度不同 ,界面态引起的器件特性的退化不同 .沟道掺杂浓度提高 ,同样的界面态密度造成的漏极特性漂移增大 .     

Functional Materials for Memristor-Based Reservoir Computing: Dynamics and Applications

The booming development of artificial intelligence (AI) requires faster physical processing units as well as more efficient algorithms. Recently, reservoir computing (RC) has emerged as an alternative brain-inspired framework for fast learning with low training cost, since only the weights associated with the output layers should be trained. Physical RC becomes one of the leading paradigms for computation using high-dimensional, nonlinear, dynamic substrates. Among them, memristor appears to be a simple, adaptable, and efficient framework for constructing physical RC since they exhibit nonlinear features and memory behavior, while memristor-implemented artificial neural networks display increasing popularity towards neuromorphic computing. In this review, the memristor-implemented RC systems from the following aspects: architectures, materials, and applications are summarized. It starts with an introduction to the RC structures that can be simulated with memristor blocks. Specific interest then focuses on the dynamic memory behaviors of memristors based on various material systems, optimizing the understanding of the relationship between the relaxation behaviors and materials, which provides guidance and references for building RC systems coped with on-demand application scenarios. Furthermore, recent advances in the application of memristor-based physical RC systems are surveyed. In the end, the further prospects of memristor-implemented RC system in a material view are envisaged.     

Collective Surface Enabling an Ultralong Life of LiCoO2 at High Voltage and Elevated Temperature

Rapidly increasing demand for energy density in consumer electronics is eager for developing high-voltage LiCoO₂ (LCO). However, some great challenges such as severe phase transition and surface instability negate the cycle life of LCO operated at high-voltages (≥4.6 V). Herein, a chemical reconstruction strategy is proposed to form a collective surface of LCO through an interdiffusion reaction of MgHPO₄·3H₂O (MP) so as to extend the cycle life of high-voltage LCO. The collective surface renders a three-layer configuration that demonstrates an amorphous Li₃PO₄ outmost layer, a spinel-like layer beneath, and a Mg diffusion layer within LCO bulk. MP with relatively low hardness enables the uniform precoating via mechanical mixing, followed by a sintering process to undergo an interdiffusion reaction. Li₃PO₄ is an intrinsic electrochemical stabilizer against interfacial side reactions. The spinel-like compounds build a high-voltage-stable surface against irreversible O₂ release. In addition, Mg diffuses into the bulk lattice to suppress irreversible phase transition during the deep delithiation of LCO. Therefore, such modified LCO with a collective surface exhibits ultralong life with capacity retention of 82% after 1000 cycles at 1 C within 3.0–4.6 V and stable operating at 4.7 V or elevated temperature (45 °C).