Beam test of the CsI(Tl) calorimeter for the BELLE detector at the KEK-B factory

We studied the performance of a prototype electromagnetic calorimeter for the BELLE detector at the KEK proton synchrotron for an energy range of 0.25–3.5 GeV. The prototype consisted of an array of 6 × 5 CsI(Tl) crystals with 30 cm length (16.2 radiation lengths) and about 6 cm × 6 cm cross section. The scintillation light of each CsI(Tl) crystal was read out by two large-area PIN photodiodes and charge-sensitive preamplifiers attached at the rear face of the crystal. We measured the energy and position resolution for electrons and the e/π separation for two sets of matrix configurations: one corresponded to the center and the other to the edge of the barrel calorimeter. The overall performance measured by the test proves that the prototype calorimeter is satisfactory for the use in the BELLE detector.     

简化源项计算方法

利用程序包STCP估算核电厂在发生严重事故情况下释放到环境的放射性源项需要耗费大量计算机时间和费用。所以,对所有感兴趣的事故情景完成源项程序包的计算实际上是不可能的。为此,发展了一个简化源项计算方法。它的基本思想如下:首先利用STCP计算几个选择的序列,然后根据放射性释放和事故进程的特点处理和分析由STCP计算得到的结果,得出一些特定参数,其它事故序列的源项能够通过这些参数的重新组合得到。     

稀土Si_3N_4陶瓷材料中铝的络合滴定法测定

提出了强碱介质沉淀钇及有关杂质元素而与铝进行分离的方法。试液酸化后采用ＮａＦ析出法络合滴定测定铝。     

Fracture of Aramid Fiber/Epoxy Resin Micro Composites

Kevlar-49 fiber was modified through cold air plasma treatment and plasma grafting with acrylic monomers. Fracture of aramid fiber/epoxy resin micro composites has been studied by means of single fiber pull-out test. Tow types of pull-out curves are correlated with the different failure modes. A polyacrylic acid-co-ethyl acrylate graft layer can improve the adhesion and protect the fiber from damage caused by interfacial stresses.     

在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。     

相转移法制备高纯超细TiO2技术研究

报道了用相转移法制备高纯超细ＴｉＯ２的新技术；探讨了Ｔｉ（Ⅳ）从有机相转移到水相发生水解反应的机理 ；通过ＴＧ－ＤＴＡ分析以及ＸＲＤ物相分析对水解产物的组成、热分解机理，晶型转变规律进行了研究，建立了水解产物焙烧的最佳温度。     

建立统计宏模型的新方法

本文介绍一个新的建立统计宏模型的系统，它采用新的方法，得到简化的二次多项式，这种形式便于优化处理，适用于容差设计。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process