Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

Mining constrained gradients in large databases

Many data analysis tasks can be viewed as search or mining in a multidimensional space (MDS). In such MDSs, dimensions capture potentially important factors for given applications, and cells represent combinations of values for the factors. To systematically analyze data in MDS, an interesting notion, called "cubegrade" was recently introduced by Imielinski et al. [2002], which focuses on the notable changes in measures in MDS by comparing a cell (which we refer to as probe cell) with its gradient cells, namely, its ancestors, descendants, and siblings. We call such queries gradient analysis queries (GQs). Since an MDS can contain billions of cells, it is important to answer GQs efficiently. We focus on developing efficient methods for mining GQs constrained by certain (weakly) antimonotone constraints. Instead of conducting an independent gradient-cell search once per probe cell, which is inefficient due to much repeated work, we propose an efficient algorithm, LiveSet-Driven. This algorithm finds all good gradient-probe cell pairs in one search pass. It utilizes measure-value analysis and dimension-match analysis in a set-oriented manner, to achieve bidirectional pruning between the sets of hopeful probe cells and of hopeful gradient cells. Moreover, it adopts a hypertree structure and an H-cubing method to compress data and to maximize sharing of computation. Our performance study shows that this algorithm is efficient and scalable. In addition to data cubes, we extend our study to another important scenario: mining constrained gradients in transactional databases where each item is associated with some measures such as price. Such transactional databases can be viewed as sparse MDSs where items represent dimensions, although they have significantly different characteristics than data cubes. We outline efficient mining methods for this problem.     

一种新的多径相关瑞利信道的数学模型：理论分析及仿真比较

产生统计独立的多径相关瑞利信道是无线信道仿真的一个基本问题.Jakes模型得到了广泛应 用,但它在统计独立性方面还存在一些问题.该文提出一种新的相关瑞利信道的数学模型.理论分析和仿真 比较表明它在计算复杂度和统计独立性方面比最初的Jakes模型及其近来发现的改进模型更加简单有效.     

一种用于三电平逆变器的SVPWM调制方法研究

本文从二极管箝位型三电平逆变器的基本结构出发，分析其输出状态，推导出六角形空间电压矢量图。然后从一种改进的，可以减小开关损耗，避免高的dv／dt三电平空间矢量PWM调制策略出发，建立了基于Matlab的详细仿真方案，验证了方案的可行性。文章给出了扇区判断的算法流程图，脉冲生成模块的内部结构图，其中的扇区判断的算法和脉冲生成方法对于用DSP实现三电平SVPWM具有重要的参考价值。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

The pharmacokinetics of pancuronium bromide in infants, children and adults

Laparoscopic retroperitoneal lymph node dissection is a new surgical procedure used to enhance staging in men with clinical stage I nonseminomatous germ cell tumors of the testis. The procedure has been performed in a limited number of patients at several centers with extensive laparoscopic experience. Laparoscopic retroperitoneal lymphadenectomy is a technically demanding procedure which can be successfully completed in the majority of patients. However, the risk of complications is greater than in patients who undergo standard open retroperitoneal lymph node dissection. The primary advantage of a laparoscopic approach is shortened hospitalization and rapid return to normal activity. The role of laparoscopy in the management of patients with testis malignancy has not been defined. The use of this staging procedure may help minimize the need for surveillance studies following surgery and may be best utilized in men with a lower likelihood of nodal metastases. Ultimately, prospective study in large groups of patients will be necessary to determine the role of laparoscopic retroperitoneal lymph node dissection in patients with testis cancer.     

基于TC8830AF的智能语音卡结构与设计

本文描述一种基于８０３１单片机和ＴＣ８８３０ＡＦ语音处理器的ＰＣ机智能语音卡，通过软硬件设计解决了ＰＣ－８０３１－ＴＣ８８３０ＡＦ结构中的通讯问题。该语音卡在进行语音的合成、编辑和播放时，仅占用极少的ＰＣ机ＣＰＵ处理时间，能满足计算机系统进行实时语音合成的要求。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.