γ辐照保藏甜杏仁的研究

介绍了~(60)Co γ射线对甜杏仁杀虫灭菌的研究。结果表明,杀死甜杏仁表面上虫卵的适宜剂量为3.5kGy,常温下可保藏7个月以上,完好率为100％,微生物可减少99％以上。可安全越夏保存。辐照甜杏仁的主要化学成份未发生明显变化。     

硫氰酸钠湿纺腈纶设备的孔蚀与防护

本文重点讨论了硫氰酸钠湿纺腈纶设备因钝化膜缺陷和Cl-侵入而产生孔蚀的机理及环境因素对孔蚀的影响,并针对产生孔蚀的主要原因提出了防护措施。     

互联网技术和国际互联网

本文先是说明internet、Internet和intranet各自的涵义和相互的区别 ,并简单介绍互联网的几项基本规约 ,包括IP、TCP、UDP、FTP、TFTP、SMTP和HTTP。其次说明WWW及其使用的超文本 /超媒体、浏览器和客户 /服务器技术的作用 ,解释Internet的骨干网和接入网以及内部网与防火墙。最后推测Internet的应用发展前景。     

The role of human leukocyte antigen in susceptibility and clinical manifestations of sarcoidosis

To investigate the association of human leukocyte antigen (HLA) with susceptibility and clinical manifestations of sarcoidosis. Fifty-five patients with sarcoidosis were studied by using allele group specific polymerase chain reaction technique (PCR). Our data show that: (1) the gene frequency of HLA-DR5 is significantly increased in patients with sarcoidosis, but that of HLA-DR7 decreased. (2) Gene frequencies of HLA-DR9 and HLA-DR5 are relatively increased in male patients and in patients with stage I and stage IIa, respectively. The results suggest that HLA-DR gene might contribute to the susceptibility as well as to the difference of clinical manifestations in sarcoidosis.     

草酸二乙酯气相催化加氢合成乙二醇的研究

对草酸二乙酯气相催化加氢生成乙二醇反应进行了实验研究。研制了不含铬的铜基催化剂,并考察了催化剂的制备条件对反应结果的影响。结果表明,Cu/SiO_2质量比为0.67,活化温度为350℃时最佳。在上述催化剂制备的基础上,提出了最佳反应条件。     

连续输出20WAlGaAs／GaAs量子阱激光二极管线列阵

采用ＭＯＣＶＤ实现了ＡｌＧａＡｓ／ＧａＡｓ量子阱结构，获得了连续输出２０Ｗ激光二极管线列阵，线列阵长度１．０ｃｍ，激射波长８０８±４ｎｍ。     

表面稳定模式铁电液晶的电光特性测试

采用一种改进的高分子膜摩擦定向法成功地实现了表面稳定模式铁电液晶的光学双稳态，对比度大于１４０，响应时间达１００微秒。     

InAs／InP_（0．7）Sb_（0．3）热电子晶体管的f_T及f_（max）

用电荷控制及热电子弹道运动模型计算ＩｎＡｓ／ＩｎＰ０．７Ｓｂ０．３热电子晶体管的截止频率ｆＴ及最高振荡频率ｆｍａｘ。结果表明，ｆＴ、ｆｍａｘ分别达到２８０ＧＨｚ及６００ＧＨｚ。并指出，通过生长ＧａＳｂ中间层，ＩｎＡｓ／ＩｎＰ０．７Ｓｂ０．３ＨＥＴ可在ＧａＡｓ衬底上实现单片集成。     

Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS