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61.
Electrolytically grown hydrous oxide films on iridium wire electrodes have been thermally treated from 473 to 773 K. Anhydrous oxide films formed by this treatment have been subjected to cathodic polarization at the potential of the hydrogen evolution reaction, square-wave pulsing of potential from –0.25 to +1.25 V with respoect to SCE and to anodic galvanostatic polarization in 0.5 mol dm–3 H2SO4. Cathodic pretreatment caused an increase of the voltammetric charge in the oxide formation region while the square-wave pulsing formed a hydrous oxide film whose voltammetric charge was superimposed on the charge of the anhydrous oxide film. Both procedures restored the hydrophilic nature of the electrode/solution interface. Potential-time curves during anodic galvanostatic polarization served as a diagnostic criterion for the stability and the state of the oxide film.  相似文献   
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Summary The synthesis is reported of copolymers of styrene with methacrylic acid and of methyl methacrylate with methacrylic acid by radical copolymerization, of copolymers of methyl methacrylate with methacrylic acid by partial alkaline hydrolysis of poly(methyl methacrylate), and of block copolymers of styrene with methacrylic acid. Modified titration curves of all these copolymers were recorded in water and water-ethanol solutions. In a solution containing 50 mass.% ethanol, only small differences could be observed between the potentiometric behaviour of the individual copolymers and polymethacrylic acid. Also, there were no essential differences in any of the solvents used between the potentiometric behaviour of block copolymers of styrene with methacrylic acid, on the one hand, and polymethacrylic acid, on the other. On the contrary, maxima and minima were always observed on the modified titration curves of statistical copolymers with a higher content of the hydrophobic comonomer in solutions with a high water content. Thus, using the modified titration curves, it is possible to decide whether a given copolymer is of the block or statistical type.  相似文献   
63.
The study of hydration of expansive cement prepared from 64% portland cement clinker, 23% metakaolinite and 13% CaSO4.2H2O is described. It was found that in the course of a 10-day hydration period, all the gypsum entered the reaction with the formation of ettringite. In 7–10 days, after the termination of the expansion processes, typical stalk-like crystals were transformed into leaf-shaped or other formations. Ettringite was identified even after 4 months of hydration. Monosulphate (3CaO.Al2O3.CaSO4.12H2O) was found in none of the investigated high-expansion cement paste samples.  相似文献   
64.
Summary The electrical conductivity of polyphenylacetylenes and polyhalophenylacetylenes was measured in dependence on the temperature and on the type of catalyst used for polymerization. The electrical conductivity increased with increasing temperature. The energy gap was calculated from the temperature dependence on the electrical conductivity; it decreased with increasing number of conjugated double bonds in the polymer chain and with the regularity of structure of the polymer. The number of double bonds, cyclization and configurations were determined by 1H and 13C-NMR. In polyphenylacetylenes only aliphatic carbons deriving from cyclohexadiene units were found but no such units were found in polyhalophenylacetylenes. By UV-vis measurement the number of conjugated double bonds in segments was estimated. The synthesized polymers were amorphous. Their molecular weight was between 2000 and 74.000.  相似文献   
65.
The investigation of microstructure, some electrical and optical parameters of transparent ThO2-15 mol % yo1.5 ceramics has shown: (a) a very low porosity, close to zero; (b) a higher electrical conductivity than is usual for ThO2 ceramics of the same composition, with the activation energy 1.12 eV; (c) a relative permittivity r 33 under the given conditions; (d) confirmation of a single-phase fluorite-type cubic structure by means of Raman and infrared spectra.  相似文献   
66.
The wettability and infiltration of molten ZrSi2 and ZrSi2-Lu2O3 alloys into Cf/SiC and B4C-infiltrated Cf/SiC composites were investigated to understand the interfacial interactions that occur during the development of Cf/SiC-ZrC and Cf/SiC-ZrB2-ZrC-Lu2O3 materials. A significant evaporation of Si from the liquid affected the wetting behaviour of the alloy when tested in a vacuum at 1670 °C. The better wetting and spreading of the alloy over the surface was observed for the composites with lower overall porosity (12 %). On the other hand, the formation of an outer dense layer, followed up by the uniform infiltrated region up to ~ 1 mm was observed for the Cf/SiC with higher porosity (21 %). The infiltrated alloy reacted with SiC matrix to form ZrC or with B4C-infiltrated SiC matrix to form ZrB2-ZrC-SiC. The Lu2O3 particles were not wetted by the melt, and were pushed away of the reaction zone by the solidification front.  相似文献   
67.
Over the last decade, enhanced suffix arrays (ESA) have replaced suffix trees in many applications. Algorithms based on ESAs require less space, while allowing the same time efficiency as those based on suffix trees. However, this is only true when a suffix structure is used as a static index. Suffix trees can be updated faster than suffix arrays, which is a clear advantage in applications that require dynamic indexing. We show that for some dynamic applications a suffix array and the derived LCP-interval tree can be used in such a way that the actual index updates are not necessary. We demonstrate this in the case of grammar text compression with longest first substitution and provide the source code. The proposed algorithm has O(N2)O(N2) worst case time complexity but runs in O(N)O(N) time in practice.  相似文献   
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In this article, the neural network approach is exploited for development of bias‐dependent small‐signal and noise models of a class of microwave field effect transistor (FETs) made in the same technology but differing in the gate width. The prior knowledge neural approach is applied. Introducing gate width at the input of proposed neural networks, as well as the S/noise parameters of a device that belongs to the same class as the modeled device representing the prior knowledge, leads to very accurate scattering and noise parameters' modeling, as exemplified by modeling of class of pseudomorphic high electron mobility transistor (pHEMT) devices. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.  相似文献   
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