Electrical conductivity and gas sensitivity of Zn-Sb-O thick films

The thick film of Zn-Sb-O was prepared by coating the paste of nanoparticles mixture (Sb₂O₃:ZnO=1:3) on the alumina substrate, followed by sintering at 500-900 °C for 2 h in air. The electrical resistance and gas-sensing properties to benzene, alcohol and acetone of Zn-Sb-O films were found to be dependent on the change of phase structure caused by sintering temperature.     

On the role of high-energy electrons in the formation of a plasma-beam discharge structure in a diode with a slit cathode

The spatial structure of visible emission from plasma of a transverse nanosecond pulsed electric discharge in a gas-filled diode with a hollow (slit) cathode has been experimentally studied. A relation is established between the regime of electron energy relaxation and the plasma-beam discharge structure formation. High values of the electron emission coefficient are observed in the experiment, which cannot be explained using the notion of electron emission from a cathode bombarded by fast heavy particles.     

High-strain-rate superplasticity of nanocrystalline aluminum alloy 1570

The structure and mechanical properties of nanocrystalline aluminum alloy 1570 obtained by means of severe plastic deformation have been studied. Being tested in a temperature range from 300 to 400°C, the alloy exhibits high-strain-rate superplasticity. At 400°C, the superplasticity is manifested in a very broad range of strain rates, extending from 5 × 10^?3 to 1 s^?1.     

Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices

The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications.     

Fast microwave detection system for coherent synchrotron radiation study at KEK: Accelerator test facility

A fast room temperature microwave detection system based on the Schottky Barrier-diode detector was created at the KEK ATF (Accelerator Test Facility). It was tested using Coherent Synchrotron Radiation (CSR) generated by the 1.28 GeV electron beam in the damping ring. The speed performance of the detection system was checked by observing the CSR from a multi-bunch (2.8 ns bunch separation time) beam. The theoretical estimations of CSR power yield from an edge of bending magnet as well as new injection tuning method are presented. A very high sensitivity of CSR power yield to the longitudinal electron distribution in a bunch is discussed.     

The Influence of Ir and Pt Addition on the Synthesis of Fullerenes at Atmospheric Pressure

The addition of metallic Ir and Pt to a fullerene-forming, atmospheric-pressure plasma reactor was found to influence the generation of carbonaceous products. It was observed that the added metals were efficiently dispersed into the plasma and that their presence increased the yield of fullerenes. The addition of Ir led to a noticeable shift in the fullerene distribution towards C₆₀, whereas the addition of Pt increased the proportion of C₆₀ oxides and decreased the proportion of higher fullerenes. Addition of Ir also caused a reduction of the soot particle size and the formation of a considerable quantity of carbon nanotubes.     

SIMULATION STUDIES OF THE REMOVAL OF WATER FROM ETHANOL BY A CATALYTIC DISTILLATION PROCESS

A new approach based on catalytic distillation (CD) technology was proposed to remove water from ethanol. Isobutylene was introduced to react with water in the CD column. The commercial software simulation tool Aspen Plus was used to investigate the effects of key design factors such as operating pressure and temperature, reactant ratios, reflux and distillate to feed ratios, number of separation and reaction stages, and feed and reaction zone location. It was found that the CD technology offers potential advantages of reduced energy consumption and reduced capital cost over traditional approaches for the removal of water from ethanol.     

A VLSI architecture for a half-edge-based corner detector

Corner detection is a low-level feature detection operator that is of great use in image processing applications, for example, optical flow and structure from motion by image correspondence. The detection of corners is a computationally intensive operation. Past implementations of corner detection techniques have been restricted to software. In this paper we propose an efficient very large-scale integration (VLSI) architecture for detection of corners in images. The corner detection technique is based on the half-edge concept and the first directional derivative of Gaussian. Apart from the location of the corner points, the algorithm also computes the corner orientation and the corner angle and outputs the edge map of the image. The symmetrical properties of the masks are utilized to reduce the number of convolutions effectively, from eight to two. Therefore, the number of multiplications required per pixel is reduced from 1800 to 392. Thus, the proposed architecture yields a speed-up factor of 4.6 over conventional convolution architectures. The architecture uses the principles of pipelining and parallelism and can be implemented in VLSI.