Hemoglobin‐CdTe‐CaCO3@Polyelectrolytes 3D Architecture: Fabrication,Characterization, and Application in Biosensing

A Hemoglobin‐CdTe‐CaCO₃@polyelectrolyte 3D architecture is synthesized by a stepwise layer‐by‐layer method and is further used to fabricate an electrochemistry biosensor. While the calcium carbonate (CaCO₃) microsphere acts as an effective host for the loading of cadmium telluride (CdTe) quantum dots due to its channel‐like structure, the polyelectrolyte layers further increase the loading amount and help in the formation of a thick and uniform quantum‐dot “shell”, which not only improves the stability of the spheres in water, but also contributes to the fast and effective direct electron transfer between the protein redox center and the macroscopic electrode. The materials are characterized and compared, and the possible mechanism for the direct electrochemistry phenomenon is hypothesized. Our work not only provides a facile and effective route for the preparation of quantum‐dot‐loaded spheres, but also sets an example of how the structure of functional materials can be tuned and related to their applications. In addition, it is one of the few examples of using CaCO₃ microspheres in quantum‐dot loading and biosensing.     

In-line optical fiber polarizer and modulator coated withLangmuir-Blodgett films

In-line optical fiber polarizer and modulator were fabricated by depositing Langmuir-Blodgett (LB) films on polished fiber surface with gold layer. The thickness of LB film was adjusted by changing the number of monolayers, which then optimized the performance of the fiber polarizer. Good agreement was observed between the theoretically predicted conditions for efficient coupling and the experimentally determined conditions for high TM/TE extinction ratio of the optical field. By applying an electric field between the LB film, the polarization state of the lightwave in the optical fiber can be modulated     

Microstructure and domain configurations in ferroelectric PbTiO3 and Pb(Zr,Ti)O3 thin fims

Ferroelectric domain configurations in PbTiO₃ and Pb(Zr_xT_1−x)O₃ (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO₃ and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.     

3D Graphene Films Enable Simultaneously High Sensitivity and Large Stretchability for Strain Sensors

Integration of 2D membranes into 3D macroscopic structures is essential to overcome the intrinsically low stretchability of graphene for the applications in flexible and wearable electronics. Herein, the synthesis of 3D graphene films (3D‐GFs) using chemical vapor deposition (CVD) is reported, in which a porous copper foil (PCF) is chosen as a template in the atmospheric‐pressure CVD preparation. When the 3D‐GF prepared at 1000 °C (noted as 3D‐GF‐1000) is transferred onto a polydimethylsiloxane (PDMS) membrane, the obtained 3D‐GF‐1000/PDMS hybrid film shows an electrical conductivity of 11.6 S cm^?1 with good flexibility, indicated by small relative resistance changes (ΔR/R₀) of 2.67 and 0.36 under a tensile strain of 50% and a bending radius of 1.6 mm, respectively. When the CVD temperature is reduced to 900 °C (generating a sample noted as 3D‐GF‐900), the 3D‐GF‐900/PDMS hybrid film exhibits an excellent strain‐sensing performance with a workable strain range of up to 187% and simultaneously a gauge factor of up to ≈1500. The 3D‐GF‐900/PDMS also shows a remarkable durability in resistance in repeated 5000 stretching‐releasing cycles. Kinetics studies show that the response of ΔR/R₀ upon strain is related to the graphitization and conductivity of 3D‐GF which are sensitive to the CVD preparation temperature.     

Combustion Synthesized Zinc Oxide Electron‐Transport Layers for Efficient and Stable Perovskite Solar Cells

Perovskite solar cells (PSCs) have advanced rapidly with power conversion efficiencies (PCEs) now exceeding 22%. Due to the long diffusion lengths of charge carriers in the photoactive layer, a PSC device architecture comprising an electron‐ transporting layer (ETL) is essential to optimize charge flow and collection for maximum performance. Here, a novel approach is reported to low temperature, solution‐processed ZnO ETLs for PSCs using combustion synthesis. Due to the intrinsic passivation effects, high crystallinity, matched energy levels, ideal surface topography, and good chemical compatibility with the perovskite layer, this combustion‐derived ZnO enables PCEs approaching 17–20% for three types of perovskite materials systems with no need for ETL doping or surface functionalization.     

Flexible and Air-Stable Near-Infrared Sensors Based on Solution-Processed Inorganic–Organic Hybrid Phototransistors

Flexible and air-stable phototransistors are highly demanded for wearable near-infrared (NIR) image sensors. However, advanced NIR sensors via low-cost, solution-based processes remained a challenge. Herein, high-performance inorganic–organic hybrid phototransistors are achieved based on solution processed n-type metal oxide/polymer semiconductor heterostructures of In₂O₃/poly{5,5′-bis[3,5-bis(thienyl)phenyl]-2,2′-bithiophene-3-ethylesterthiophene]} (PTPBT-ET). The In₂O₃/PTPBT-ET hybrid phototransistor combines the advantages of both fast electron transport in In₂O₃ and high photoresponse in PTPBT-ET, showing high saturation mobility of 7.1 cm² V⁻¹ s⁻¹ and large current on/off ratio of >10⁷. As a result, the phototransistor exhibits high performance towards NIR light sensing with a responsivity of 200 A W⁻¹, a specific detectivity of 1.2 × 10¹³ Jones, and fast photoresponse with rise/fall time of 5/120 ms. Remarkably, the hybrid phototransistor, without any passivation, demonstrates excellent electrical stability without performance degradation even after 160 days in air. A 10 × 10 phototransistor array is also enabled by virtue of the high device uniformity. Lastly, flexible In₂O₃/PTPBT-ET phototransistor on polyimide substrate is attained, exhibiting outstanding mechanical flexibility up to 1000 bending/releasing cycles at a bending radius of 5 mm. These achievements pave the way for constructing air-stable hybrid phototransistors for flexible NIR image sensor applications.     

Performance analysis of clustered device-to-device networks using matern cluster process

Wireless Networks - This paper presents a new analytical framework for clustered device-to-device (D2D) networks in dense urban scenarios. We model the D2D network as a Matern cluster process (MCP)...     

Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction

Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.     

基于多层快速多极子和有限元混合求解的飞行器天线布局设计

设计一种微带天线,以该天线为基础进行飞行器天线布局设计,并考虑遮挡的判断问题。模型仿真采用多层快速多极子和有限元的方法混合求解,设置混合场积分方法提高收敛性,解决了电大尺寸模型复杂电磁场的计算问题,兼顾运算速度和精度,得出并分析飞行器上3天线、4天线、5天线以不同方式布局的远场方向图仿真结果,并提出一种方向图评估法则,对飞行器天线布局有一定参考意义。     

双钟形喷管流场数值模拟与试验验证

采用SST k-ω湍流模型封闭轴对称粘性可压缩N～S方程组,对双钟形喷管在不同环境压力下的流场进行数值模拟,并与相应的冷吹风试验结果进行对比验证.对比结果显示,数值模拟与冷吹风试验结果在流场结构及性能曲线上均吻合良好.这表明,该数值计算模型可有效应用于双钟形喷管的数值模拟及性能分析.计算和试验结果还显示:低空工况下,双钟形喷管在型面转折点处出现流动分离,喷管性能接近于小面积比基弧段喷管;高空工况则气流可完全附着于延伸段壁面,喷管总面积比得到有效应用.这一结果验证了双钟形喷管的高度补偿特性.