An Intelligent Product Recommendation Model to Reflect the Recent Purchasing Patterns of Customers

Mobile Networks and Applications - This study suggests a new product recommendation model to reflect the recent purchasing patterns of customers. There are many methods to measure the similarity...     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.     

Optical-Kerr-enhanced mode locking of a lamp-pumped Nd:YAG laser

We discuss the potential use of three new mode-locking techniques, namely additive-pulse mode locking, the combination of self-phase modulation and group velocity dispersion, and Kerr lens mode locking, as simple retrofits to enhance the performance of conventional multi-watt lamp-pumped Nd:YAG lasers. Of the three, we discard the APM technique because of structural and power-handling difficulties. We then discuss theoretically and confirm experimentally that the combination of SPM plus gain dispersion can lead to pulsewidth reduction by a factor of 2 to 2.5 but not more, in agreement with the analysis of Haus and Silberberg. Finally, while KLM can be very effective as a fast saturable absorber in many types of lasers, we find that its application to lamp-pumped YAG lasers is frustrated by instabilities in thermal focusing and transverse mode position characteristic of this type of laser     

Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin Films

Recent increases in the demand for mobile devices have stimulated the development of nonvolatile memory devices with high performance. In this Communication, we describe the fabrication of low‐cost, high‐performance, digital nonvolatile memory devices based on semiconducting polymers, poly(o‐anthranilic acid) and poly(o‐anthranilic acid‐co‐aniline). These memory devices have ground‐breaking and novel current–voltage switching characteristics. The devices are switchable in a very low voltage range (which is much less than those of all other devices reported so far) with a very high ON/OFF current ratio (which is on the order of 10⁵). The low critical voltages have the advantage for nonvolatile memory device applications of low operation voltages and hence low power consumption. With this very low power consumption, the devices demonstrate in air ambient to have very stable ON‐ and OFF‐states without any degradation for a very long time (which has been confirmed up to one year so far) and to be repeatedly written, read and erased. Our study proposes that the ON/OFF switching of the devices is mainly governed by a filament mechanism. The high ON/OFF switching ratio and stability of these devices, as well as their repeatable writing, reading and erasing capability with low power consumption, opens up the possibility of the mass production of high performance digital nonvolatile polymer memory devices with low cost. Further, these devices promise to revolutionize microelectronics by providing extremely inexpensive, lightweight, and versatile components that can be printed onto plastics, glasses or metal foils.     

A Multi‐Functional Highly Efficient Upconversion Luminescent Film with an Array of Dielectric Microbeads Decorated with Metal Nanoparticles

Upconversion nanoparticles (UCNPs) have been integrated with photonic platforms to overcome the intrinsically low quantum efficiency limit of upconversion luminescence (UCL). However, platforms based on thin films lack transferability and flexibility, which hinders their broader and more practical application. A plasmonic structure is developed that works as a multi‐functional platform for flexible, transparent, and washable near‐infrared (NIR)‐to‐visible UCL films with ultra‐strong UCL intensity. The platform consists of dielectric microbeads decorated with plasmonic metal nanoparticles on an insulator/metal substrate. Distinct improvements in NIR confinement, visible light extraction, and boosted plasmonic effects for upconversion are observed. With weak NIR excitation, the UCL intensity is higher by three orders of magnitude relative to the reference platform. When the microbeads are organized in a square lattice array, the functionality of the platform can be expanded to wearable and washable UCL films. The platform can be transferred to transparent, flexible, and foldable films and still emit strong UCL with a wide viewing angle.     

Satellite UMTS/IMT2000 W-CDMA air interfaces

The third-generation IMT-2000 initiative of the International Telecommunication Union is aiming at the provision of a limited family of global standards providing worldwide multimedia wireless services in a host of environments encompassing indoor picocells to satellite megacells. The ITU IMT-2000 initiative has been supported by several regional standardization bodies such as the European Telecommunication Standard Institute with its Universal Mobile Telecommunication System. In this article a few air interface proposals for the satellite component of UMTS/IMT-2000 based on adaptation of the emerging terrestrial wideband CDMA standards are reviewed. In particular, S-UMTS requirements are examined together with W-CDMA applicability to the satellite environment. It is shown that with minor adaptations, the terrestrial W-CDMA air interface provides an efficient solution for the satellite UMTS component. This commonality will certainly help in the realization of low-cost low-size dual-mode user terminals encompassing both terrestrial and satellite components     

Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials

The fabrication of very narrow metal lines by the lift‐off technique, especially below sub‐10 nm, is challenging due to thinner resist requirements in order to achieve the lithographic resolution. At such small length scales, when the grain size becomes comparable with the line‐width, the built‐in stress in the metal film can cause a break to occur at a grain boundary. Moreover, the line‐width roughness (LWR) from the patterned resist can result in deposited metal lines with a very high LWR, leading to an adverse change in device characteristics. Here a new approach that is not based on the lift‐off technique but rather on low temperature hydrogen reduction of electron‐beam patterned metal naphthenates is demonstrated. This not only enables the fabrication of sub‐10 nm metal lines of good integrity, but also of low LWR, below the limit of 3.2 nm discussed in the International Technology Roadmap for Semiconductors. Using this method, sub‐10 nm nickel wires are obtained by reducing patterned nickel naphthenate lines in a hydrogen‐rich atmosphere at 500 °C for 1 h. The LWR (i.e., 3 σ_LWR) of these nickel nanolines was found to be 2.9 nm. The technique is general and is likely to be suitable for fabrication of nanostructures of most commonly used metals (and their alloys), such as iron, cobalt, nickel, copper, tungsten, molybdenum, and so on, from their respective metal–organic compounds.     

Reconfigurable Optical Add‐Drop Multiplexer Using a Polymer Integrated Photonic Lightwave Circuit

We have developed a fully functional reconfigurable optical add‐drop multiplexer (ROADM) switch module using a polymer integrated photonic lightwave circuit technology. The polymer variable optical attenuator (VOA) array and digital optical switch array are integrated into one polymer PLC chip and packaged to form a 10‐channel VOA integrated optical switch module. Four of these optical switch modules are used in the ROADM switch module to execute 40‐channel switching and power equalization. As a wavelength division multiplexer (WDM) filter device, two C‐band 40‐channel athermal arrayed waveguide grating WDMs are used in the ROADM module. Optical power monitoring of each channel is carried out using a 5% tap PD. A controller and firmware having the functions of a 40‐channel switch and VOA control, optical power monitoring, as well as TEC temperature control, and data communication interfaces are also developed in this study.     

Semi-blind channel estimation and PAR reduction for MIMO-OFDM system with multiple antennas

A combining of MIMO signal processing with OFDM is regarded as a promising solution of enhancing the performance of next generation wireless system. Therefore, in this paper, an OFDM-based wireless system employing layered space-time architecture is considered for a high-rate transmission. With an emphasis on a preamble design for multi-channel separation, we address a channel estimation based on the time-domain windowing and its imperfectness in MIMO-OFDM system. By properly designing each preamble for multiple antennas to be orthogonal in the time domain, the channel estimation can be executed based on semi-blind processing in the case of more than two transmitting antennas. And also we evaluate the PAR performance in the MIMO-OFDM system using the SLM and PTS approaches. The investigated SLM and PTS schemes for MIMO-OFDM signals select the transmitted sequence with lowest average PAR over all transmitting antennas and retrieve the side information very accurately at the expense of a slight degradation of the PAR performance. The low probability of false side information can improve the overall detection performance of the MIMO-OFDM system with erroneous side information compared to the ordinary SLM and PTS approaches, respectively. Also, we provide closed form of the average BER performance in MIMO-OFDM system using analytic approach.