Toward functional magnetic stimulation (FMS) theory and experiment

Examines the use of magnetic fields to functionally stimulate peripheral nerves. All electric fields are induced via a changing magnetic field whose flux is entirely confined within a closed magnetic circuit. Induced electric fields are simulated using a nonlinear boundary element solver. The induced fields are solved using duality theory. The accuracy of these predictions is verified by saline bath experiments. Next, the theory is applied to the stimulation of nerves using small, partially occluded ferrite and laminated vanadium permendur cores. Experiments demonstrate the successful stimulation of peripheral nerves in the African bullfrog with 11 mA, 153 mV excitations. These results offer a new vista of possibilities in the area of functional nerve stimulation. Unlike functional electric stimulation (FES), FMS does not involve any half cell reactions, and thus would not have the commensurate FES restrictions regarding balanced biphasic stimulation, strength duration balances, and oxidation issues, always exercising care that the electrodes remain in the reversible operating regime     

溶胶-凝胶法制备(Sr,Pb)TiO3纳米晶粉及表征

采用溶胶－凝胶法成功地合成了（Sr,Pb)TiO3纳米晶粉，并利用FTIR技术对凝胶的形成过程及350℃，1．5h煅烧获得的粉体材料进行了表征。实验以TG－DSC分析作为拟定煅烧温度的依据，以XRD作为煅烧产物的分析手段，最佳煅烧温度为600℃，所合成的（Sr,Pb)TiO3纳米晶粉的平均晶粒尺寸约为21nm，属钙钛矿型立方顺电相结构。     

离散效应存在时孤子脉冲的增强压缩

在群速度不匹配的条件下，提出一种提高孤子脉冲压缩效应的新方法．研究表明，若使信号脉冲与泵浦脉冲存在一适当的初始延时，则不但可以提高离散效应单独存在时信号脉冲的压缩比，而且可以提高孤子脉冲的压缩质量．     

EWSD中的ADSL.lite和xDSL

在简单介绍了ADSL技术的基础上,具体介绍了如何在EWSDU交换机中创速和设置ADSL用户功能和xDSL功能.     

某尾矿库周围环境中污染物生态转移研究

对我国某尾矿库周围环境中放射性核素U、^226Ra、Th及非放污染物Mn^2 、Cd、Cr、Pb在农作物和水生生物等介质中的浓集情况进行了现场研究，给出了相应的污染物生态学转移系数Bv和Bp值。     

Diagnostic Data Compression Techniques for Embedded Memories with Built-In Self-Test

A system-on-chip (SOC) usually consists of many memory cores with different sizes and functionality, and they typically represent a significant portion of the SOC and therefore dominate its yield. Diagnostics for yield enhancement of the memory cores thus is a very important issue. In this paper we present two data compression techniques that can be used to speed up the transmission of diagnostic data from the embedded RAM built-in self-test (BIST) circuit that has diagnostic support to the external tester. The proposed syndrome-accumulation approach compresses the faulty-cell address and March syndrome to about 28% of the original size on average under the March-17N diagnostic test algorithm. The key component of the compressor is a novel syndrome-accumulation circuit, which can be realized by a content-addressable memory. Experimental results show that the area overhead is about 0.9% for a 1Mb SRAM with 164 faults. A tree-based compression technique for word-oriented memories is also presented. By using a simplified Huffman coding scheme and partitioning each 256-bit Hamming syndrome into fixed-size symbols, the average compression ratio (size of original data to that of compressed data) is about 10, assuming 16-bit symbols. Also, the additional hardware to implement the tree-based compressor is very small. The proposed compression techniques effectively reduce the memory diagnosis time as well as the tester storage requirement.     

Effects of Sc2O3 and MgO passivation layerson the output power of AlGaN/GaN HEMTs

The low temperature (100°C) deposition of Sc₂O₃ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm² HEMTs for both types of oxide passivation layers. Both Sc₂ O₃ and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN_x passivation which typically showed ⩽2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc₂O₃ or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs     

Excavation of Inlet Tunnels at Geheyan Power Station

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