乳化钻井液条件下高温高压气井气体扩散研究

高温高压下甲烷在油里的溶解度大，水包油乳化钻井液中存在油相，钻井作业中钻井液静置期间如起下钻、工具故障抢修等时间过长，储层中的甲烷气体会扩散到井眼里。在钻高含硫化氢及二氧化碳气井时，高温高压条件下天然气更有可能到达与油完全互溶的状态。文章将储层内的水平段井眼的气体扩散区域划分为4个区，外滤饼区、内滤饼区、滤液滞留区、滤液未污染区，根据外滤饼区、内滤饼区、滤液滞留区不同计算参数条件，计算预测了在使用水包油乳化钻井液情况下，储层中天然气通过扩散穿过3个区后，进入储层内井眼段环空导致的环空含气质量浓度变化，对环空内含气质量浓度随扩散时间、含油浓度因素的变化进行了定量计算。用伽略金有限元方法求解，计算表明，气体扩散量随钻井液静置时间延长而增加，水基钻井液加入油后与不加油的钻井液相比增大了气体扩散量。     

动感像素全息母版图案的设计制作研究

本文介绍了一种新颖的数码像素全息高速拍摄装置来实现全息母版的制作。提出和介绍了运用Photoshop软件一些特殊的图像处理功能设计制作动感像素全息图的方法,并结合多种防伪技术,使产生的图案具有不可仿制的图形畸变特点,并列举了设计实例。     

干涉型激光直写技术用于光盘防伪

利用作者研制的干涉型激光直写系统，阐述了干涉型激光直写设计OVD的方法，防伪特征，介绍了应用于光盘防伪的OVD技术和应用前景，给出了实验结果。     

Exposed Die-Top Encapsulation Molding for an Improved High- Performance Flip Chip BGA Package

The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported     

高酸原油脱酸工艺技术研究

介绍了一种原油脱酸工艺方法。研究了温度、时间对高酸原油脱酸的影响,脱酸温度大于 260℃,脱酸反应较快。分析了高酸原油脱酸前后馏分酸值的变化,脱酸反应对130℃以上各馏分酸值降低都较多,180℃以上馏分脱酸率在80％以上。     

基于MPEG-2文件的合并

介绍了具有相同音频、视频编码方式的MPEG - 2节目流如何合并成一个节目流。合并后的文件播放流畅并且时间显示正确 ,它包括PATPMT表的重写 ,系统头部分相关字段的更改 ,PCR值的修改 ,解码时间标签 (DTS)和显示时间标签 (PTS)的重新确定 ,传送速率的修改以及添加相应的空包     

复合固体超强酸SO42-/Fe2O3-γ-Al2O3催化合成丁酸丁酯

采用沉淀硫酸化法制备了复合固体超强酸催化剂SO2-4/Fe2O3-γ-Al2O3,确定了其最佳制备工艺条件:硫酸浸渍浓度为0.6 mol/L,浸渍时间4 h;焙烧温度550℃,焙烧时间3 h.并采用该催化剂合成丁酸丁酯,考察了物料配比、催化剂用量和反应时间对酯化反应的影响,确定了丁酸丁酯的最佳合成条件:丁醇与丁酸摩尔比为1.4:1,催化剂用量0.9%(以反应物质量计),回流条件下反应3.0 h,在此最佳合成条件下,酯化率可达95.6%.     

Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Monte Carlo simulation of gas phase polymerization of 1,3‐butadiene. Part II: Kinetics optimization and confirmation

Studies on the deactivations and initiations of gas phase polymerizations of 1,3‐butadiene have been achieved by Monte Carlo simulation. Initiation and deactivation control the reaction before and after the peak of the polymerization rate, respectively. The influence of polymerization temperature has been studied. Monte Carlo modeling of polymerization kinetics and mechanism was confirmed by the agreement of experimental data and simulation results of polymerizations run with a temporary evacuation of monomer. The balance of catalysts and active chains is established by both initiation and chain transfer reactions with cocatalyst, which causes a ‘pseudo‐stability’ stage. © 2003 Society of Chemical Industry     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.