Development of oxide dispersion strengthened ferritic steels with and without aluminum

Pure Fe,Cr,Al,Ti elemental powders and prealloyed Y2O3 powder were processed by high energy mechanical milling.The compositions of the mixed powders are designed as Fe-18Cr-0.2Ti-0.35Y2O3 and Fe-18Cr-5...     

The Kurosawa-Desmedt key encapsulation is not chosen-ciphertext secure

At CRYPTO 2004, Kurosawa and Desmedt presented a new hybrid encryption scheme that is chosen-ciphertext (CCA2) secure in the standard model. Until now it was unknown if the key encapsulation part of the Kurosawa-Desmedt scheme by itself is still CCA2-secure or not. In this note we answer this question to the negative, namely we present a simple CCA2 attack on the Kurosawa-Desmedt key encapsulation mechanism. Our attack further supports the design paradigm of Kurosawa and Desmedt to build CCA2-secure hybrid encryption from weak key encapsulation.     

Solid‐State Conversion of Single Crystals: The Principle and the State‐of‐the‐Art

Solid‐state conversion of single crystals from polycrystalline materials has the advantages of cost‐effectiveness, chemical homogeneity, and versatility over the conventional melt growth and solution growth methods, particularly for systems with high melting points, incongruent melting, high reactivity (volatility), and phase transformations at high temperature. Nevertheless, for commercial production, this technique has only been successful in a few limited systems, in particular ferroelectric systems. This is mostly because of the difficulty in controlling the microstructure, particularly suppressing grain growth in the polycrystal during its conversion. This article describes the principle and the current status of the solid‐state conversion of single crystals. We first introduce the recently developed principle of microstructural evolution to explain the basis of the microstructure control in polycrystals for solid‐state conversion. We then report recent technical developments in fabricating single crystals by the solid‐state single crystal growth (SSCG) method and their physical properties. The SSCG method is expected to be studied and utilized more widely in fabricating single crystals with complex compositions as a strong alternative to the melt growth and solution growth methods.     

Design and verification of a single slab RAS through mass production of glass/MWNT added epoxy composite prepreg

In this study, glass fiber composite prepreg is manufactured with multi‐walled carbon nanotube (MWNT) added epoxy using two different methods. Because MWNT agglomeration occurs, the calendering dispersion method is used to resolve this problem. The tensile and shear tests of glass/MWNT 1.8wt % added epoxy composite (CNT18) are conducted and the results are compared with the properties of a commercial glass/epoxy composite (GEP 118). The complex permittivity is measured using a network analyzer and a waveguide in the Ku‐band. A single slab radar absorbing structure (RAS) is also designed and verified. It is found that the tensile and shear properties of CNT18 are sufficient to replace GEP 118 as a structural material. Furthermore, the—10 dB bandwidth and reflection loss of the RAS using CNT18 is 12.87 to 17.78 GHz (4.91 GHz) and—29.2 dB at 14.95 GHz, respectively. The measurement results align well with the simulation results. © 2015 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 42019.     

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand

Electronics that are capable of destroying themselves, on demand and in a harmless way, might provide the ultimate form of data security. This paper presents materials and device architectures for triggered destruction of conventional microelectronic systems by means of microfluidic chemical etching of the constituent materials, including silicon, silicon dioxide, and metals (e.g., aluminum). Demonstrations in an array of home‐built metal‐oxide‐semiconductor field‐effect transistors that exploit ultrathin sheets of monocrystalline silicon and in radio‐frequency identification devices illustrate the utility of the approaches.