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881.
The paper discusses the basic component of a mechanical incremental transmission system. It is called a quadriratio stage because it is capable of four distinct gear ratios. Several stages can be combined to provide a wide gear-ratio range. The paper concludes with a design example showing a 9:1 to 1:1 range transmission having 64 gear ratios. 相似文献
882.
The growth kinetics, crystal structure, and morphology of the intermetallic compounds formed between nickel, electroless Ni-P and electroless Ni-B coatings with tin at 453 to 493 K for times up to 506 h have been determined by microscopical and X-ray diffraction techniques. The compound Ni3Sn4 was formed. All kinetics followed as parabolic law with activation energies of 128.0, 130.4, and 122.3 kJ mol–1 for the Ni/Sn, Ni-P/Sn and Ni-B/Sn systems, respectively. The rate of growth of Ni3Sn4 in the Ni/Sn and Ni-P/Sn systems were similar but the rate of growth in the Ni-B/Sn system was five times faster. Pores occurred in the intermetallic compound formed in the Ni-P/Sn system and these are discussed in relation to the density of the phases. 相似文献
883.
884.
885.
This paper draws attention to the basic principles governing reflections in uniform Bragg reflectors (BR) when measured employing optical low coherence reflectometry (OLCR) technique. Using computations based on transfer matrix method (TMM), we first showed a strong spectral dependence of Bragg reflectograms on an OLCR probe spectrum. Later, this dependence is exploited to evaluate, for the first time, the coupling coefficient κ of a Bragg grating in a distributed Bragg reflector (DBR) laser on InP 相似文献
886.
Herzog H.-J. Hackbarth T. Seiler U. Konig U. Luysberg M. Hollander B. Mantl S. 《Electron Device Letters, IEEE》2002,23(8):485-487
Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer. 相似文献
887.
888.
This space heating system has a rockbed beneath and in contact with the floor of a dwelling, which is heated by radiation and convection from the floor. The ability of the heating system to maintain comfort conditions with no additional energy input is discussed and it is shown that the system is more suitable for use in mild climates than severe ones. Experimental work on horizontal air flow rockbeds is reported and shows that shallow beds can be designed in the same way as vertical air flow beds. The influence of natural convection on the effective thermal conductivity of the experimental rockbeds is reported. 相似文献
889.
Preliminary Development of a Model and Measure of Computer-Mediated Communication (CMC) Competence 总被引:1,自引:0,他引:1
Brian H. Spitzberg 《Journal of Computer-Mediated Communication》2006,11(2):629-666
The rationale for developing a theoretical model of computer-mediated communication (CMC) competence is established through review of social trends in the use of new media technologies. Special attention is paid to the role new media play in the formation and development of personal relationships. A model of CMC competence is then developed along the lines of motivation, knowledge, skills, context, and outcomes as a metaphorical typology for organizing existing CMC research. This research is reviewed as it informs, and is organized by, the model of CMC competence. A sampling of formal propositions resulting from the model is elaborated, and the results of preliminary pilot studies of the model are reviewed. The model is offered as a first step in examining individual differences in the domain of CMC relationships and media choice. 相似文献
890.
F. D. McDaniel B. L. Doyle C. H. Seager D. S. Walsh G. Vizkelethy D. K. Brice C. Yang P. Rossi M. Nigam M. El Bouanani G. V. Ravi Prasad J. C. Schwartz L. T. Mitchell J. L. Duggan 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2002,190(1-4):1-10
A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino. 相似文献