Feature Detection and Simplification of 3D Face Data with Facial Expressions

We propose an efficient framework to realistically render 3D faces with a reduced set of points. First, a robust active appearance model is presented to detect facial features in the projected faces under different illumination conditions. Then, an adaptive simplification of 3D faces is proposed to reduce the number of points, yet preserve the detected facial features. Finally, the point model is rendered directly, without such additional processing as parameterization of skin texture. This fully automatic framework is very effective in rendering massive facial data on mobile devices.     

Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites

p-Type Yb _z Fe_4?x Co _x Sb₁₂ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of 10²⁰ cm^?3 to 10²¹ cm^?3. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites.     

Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation–chemical–mechanical polishing (STI–CMP) process

This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, the removal properties of plasma enhanced tetra-ethyl ortho-silicate (PETEOS) blanket wafers was investigated, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the amount of oxide removal by blanket and patterned wafers. We analyzed this relationship, and the post-CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafers (correlation factor: 0.7109). So, we could confirm the repeatability as applying to STI CMP process from the linear formula obtained.     

Inter‐carrier Interference Reduction Scheme for SFBC‐OFDM Systems

In this paper, we first analyze carrier‐to‐interference ratio performance of the space–frequency block coded orthogonal frequency‐division multiplexing (SFBC‐OFDM) system in the presence of phase noise (PHN) and residual carrier frequency offset (RCFO). From the analysis, we observe that conventional SFBC‐OFDM systems suffer severely in the presence of PHN and RCFO. Therefore, we propose a new inter‐carrier interference (ICI) self‐cancellation method — namely, ISC — for SFBC‐OFDM systems to reduce the ICI caused by PHN and RCFO. Through the simulation results, we show that the proposed scheme compensates the ICI caused by PHN and RCFO in Alamouti SFBC‐OFDM systems and has a better performance than conventional schemes.     

Direct Graphene Transfer and Its Application to Transfer Printing Using Mechanically Controlled,Large Area Graphene/Copper Freestanding Layer

Direct graphene transfer is an attractive candidate to prevent graphene damage, which is a critical problem of the conventional wet transfer method. Direct graphene transfer can fabricate the transferred graphene film with fewer defects by using a polymeric carrier. Here a unique direct transfer method is proposed using a 300 nm thick copper carrier as a suspended film and a transfer printing process by using the polydimethylsiloxane (PDMS) stamp under controlled peeling rate and modulus. Single and multilayer graphene are transferred to flat and curved PDMS target substrate directly. With the transfer printing process, the transfer yield of a trilayer graphene with 1000 µm s^?1 peeling rate is 68.6% of that with 1 µm s^?1 peeling rate. It is revealed that the graphene transfer yield is highly related to the storage modulus of the PDMS stamp: graphene transfer yield decreases when the storage modulus of the PDMS stamp is lower than a specific threshold value. The relationship between the graphene transfer yield and the interfacial shear strain of the PDMS stamp is studied by finite‐element method simulation and digital image correlation.     

Simultaneous amplification by Er ions and SRS in an Er-doped germano-silica fiber

A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band.     

Relationship between ADC performance and requirements of digital-IF receiver for WCDMA base-station

The recent rapid development of digital wireless systems has led to the need for multistandard, multichannel radiofrequency (RF) transceivers. The paper presents the relationship between the performance of a bandpass-sampling analog-to-digital converter (ADC) and the requirements of a digital intermediate-frequency receiver for a wideband code-division multiple-access (WCDMA) base-station. As such, the ADC signal-to-noise ratio (SNR), the derivation of the receiver sensitivity using the SNR/spurious free dynamic range (SFDR) of the ADC, the effect of the ADC clock jitter and receiver linearity, plus the relationship between the receiver IF and the ADC sampling frequency are all analyzed. As a result, when a WCDMA base-station receiver has a data rate of 12.2 kbps, bit error rate (BER) of 0.001, and channel index, k, of 5 (sampling frequency of 122.88 MHz and IF of 92.16 MHz), the performance of a bandpass-sampling ADC was analytically determined to require a resolution of 14 bits or more, SNR of 66.6 dB or more, SFDR of 86.5 dBc or more, and total jitter of 0.2 ps or less, including internal ADC jitters and clock jitters.     

Joint Channel Coding Based on Principal Component Analysis

This paper proposes a new joint channel coding algorithm based on principal component analysis. A conventional joint channel coder using passive downmixing undergoes a reduction of both the primary‐to‐ambient energy ratio (PAR) of the downmix signal and the panning gain ratio of the primary source. The proposed system preserves the PAR of the downmix signal by using active downmixing which reflects spatial characteristic. The proposed system also improves the accuracy of the panning gain ratio estimation. Computer simulations and subjective listening tests verify the performance of the proposed system.     

Electrical Properties of Ca<Subscript>9</Subscript>ZnLi(PO<Subscript>4</Subscript>)<Subscript>7</Subscript> Ceramics Prepared by Reactive Pressureless Sintering

Well-crystallized Ca₉ZnLi(PO₄)₇ ceramics were prepared by reactive pressureless sintering at atmospheric pressure. The single-phase Ca₉ZnLi(PO₄)₇ ceramics were confirmed by x-ray diffraction (XRD). The dielectric and electrical properties were investigated over a wide frequency range (1 Hz to 1 MHz) by complex impedance spectroscopy at different temperatures between 25°C and 600°C. A dielectric anomaly was observed at 440°C, which might be related to the phase transition. The impedance Cole–Cole plot was used to analyze the results of complex impedance measurements, revealing that the electrical properties depend strongly on frequency and temperature. Two relaxation dispersions of the electrical parameters were found and analyzed in terms of bulk and grain-boundary ionic transfer processes. The slope of the alternating-current (AC) conductivity over a wide range of temperatures provides activation energies from 0.48 eV to 1.69 eV. These results suggest that the conduction process is of the mixed type.