The novel communication algorithm and the throughput analysis for wireless sensor networks

Aiming at the significance of the energy controls of wireless sensor networks, an economical energy consumption algorithm for wireless communicating in Wireless Sensor Networks (WSN) is presented. Based on the algorithm, the maximal system throughput of WSN is analyzed, and the upper bound of throughput of WSN is proposed and proved. Some numerical simulations are conducted and analyzed. The conclusions include that the transmitting radius of sensor node and the parameters of the energy cost function have significant influence upon the throughput, but the monitoring region radius has little influence. For the same transmitting distance, the more the hopping of information trans- mitting, the better the throughput of WSN. On the other hand, for the energy optimization of the whole WSN, the trade-off problem between the throughput capacity and the relay nodes is proposed, and the specific expression of relay hops that minimized the energy consumptions and the maximal throughput of WSN under the specific situation is derived.     

New Criteria of Robust $$H_\infty $$ Stability for Fuzzy Mixed-Delay Systems with Nonlinear Noise Disturbances

This paper investigates new criteria of the robust \(H_\infty \) stability for a class of uncertain stochastic fuzzy mixed-delay systems with nonlinear noise disturbances by employing an improved free-weighting matrix approach. The fuzzy system is based on the Takagi–Sugeno model that is often used to represent the complex nonlinear systems in terms of fuzzy sets and fuzzy reasoning. To reflect more realistic dynamical behaviors of the system, both the parameter uncertainties and stochastic disturbances are considered, the stochastic disturbances are given in the form of a Brownian motion. The mixed delays comprise both discrete and distributed time-varying delays. In terms of a stochastic fuzzy Lyapunov functional, a sufficient criterion is proposed to investigate dynamical behaviors of the system in the mean-square sense with an \(H_\infty \) performance index.     

A Novel Approach for Diagnosis of Analog Circuit Fault by Using GMKL-SVM and PSO

This paper presents a novel analog circuit fault diagnosis approach using generalized multiple kernel learning-support vector machine (GMKL-SVM) method and particle swarm optimization (PSO) algorithm. First, the wavelet coefficients’ energies of impulse responses are generated as features. Then, a diagnosis model is constructed by using GMKL-SVM method based on features. Meanwhile, the PSO algorithm yields parameters for the GMKL-SVM method. Sallen-Key bandpass filter and two-stage four-op-amp biquad lowpass filter fault diagnosis simulations are given to demonstrate the proposed diagnose procedure, and the comparison simulations reveal that the proposed approach has higher diagnosis precision than the referenced methods.     

Wetting interaction between Sn-Zn-Ag solders and Cu

The wetting interaction of Sn-(7.1–9)Zn-(0–3)Ag solders with Cu was investigated from 230°C to 300°C. The wetting time, wetting forces, and activation energy of the wetting reaction were studied. The wetting time decreases with increasing temperature and increases with Ag content. The wetting force exhibits a disproportional correlation to temperature rise, while no trend was observed with respect to Ag content. The wetting behavior was ascribed to the interaction between Cu and Zn. The AgZn₃ compound was formed at the interface when the solder contains 0.3% Ag and above, while it was formed within the bulk solder at 2% Ag and above.     

Thermal diffusion of lithium acceptors into ZnO crystals

Electron paramagnetic resonance (EPR) has been used to monitor the diffusion of lithium ions into single crystals of ZnO. The in-diffusion occurs when a crystal is embedded in LiF powder and then held in air at temperatures near 750°C for periods of time ranging up to 22 h. These added lithium ions occupy zinc sites and become singly ionized acceptors (because the material is initially n type). A corresponding reduction in the number of neutral shallow donors is observed with EPR. To monitor the lithium acceptors, we temporarily convert them to the EPR-active neutral acceptor state by exposure to laser light (325 nm or 442 nm) at low temperatures. Also, after each diffusion treatment, we monitor the EPR signal of singly ionized copper acceptors and the photo-induced EPR signal of neutral nitrogen acceptors. These nitrogen and copper impurities are initially present in the crystal, at trace levels, and are made observable by the thermal anneals. Infrared-absorption measurements at room temperature in the 2–10 μm region show that the concentration of free carriers decreases as lithium is added to the crystal. After 22 h at 750°C in the LiF powder, the free-carrier absorption is no longer present, and the crystal is semi-insulating.     

Low-energy electron-enhanced etching of HgCdTe

Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH₄ concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition.     

Layer-transfer process for silicon-on-insulator with improved manufacturability

We observe hydrogen platelet buildup in single-crystalline silicon caused by hydrogen-plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried-defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena and discuss applicability of the plasma hydrogenation to silicon-on-insulator (SOI) wafer fabrication by layer transfer.     

Effect of silver content on thermal fatigue life of Sn-xAg-0.5Cu flip-chip interconnects

The thermal fatigue properties of Sn-xAg-0.5Cu (x=1, 2, 3, and 4 in mass%) flip-chip interconnects were investigated to study the effect of silver content on thermal fatigue endurance. The solder joints with lower silver context (x=1 and 2) had a greater failure rate compared to those with higher silver content (x=3 and 4) in thermal fatigue testing. Cracks developed in the solders near the solder/chip interface for all joints tested. This crack propagation may be mainly governed by the nature of the solders themselves because the strain-concentrated area was similar for tested alloys independent of the silver content. From the microstructural observation, the fracture was a mixed mode, transgranular and intergranular, independent of the silver content. Higher silver content alloys (x=3 and 4) had finer Sn grains before thermal cycling according to the dispersion of the Ag₃Sn intermetallic compound, and even after the cycling, they suppressed microstructural coarsening, which degrades the fatigue resistance. The fatigue endurance of the solder joints was strongly correlated to the silver content, and solder joints with higher silver content had better fatigue resistance.     

Microstructure characterization of Sn-Ag solder joints between stud bumps and metal pads

The microstructure of the flip-chip solder joints fabricated using stud bumps and Pb-free solder was characterized. The Au or Cu stud bumps formed on Al pads on Si die were aligned to corresponding metal pads in the substrate, which was printed with Sn-3.5Ag paste. Joints were fabricated by reflowing the solder paste. In the solder joints fabricated using Au stud bumps, Au-Sn intermetallics spread over the whole joints, and the solder remained randomly island-shaped. The δ-AuSn, ε-AuSn₂, and η-AuSn₄ intermetallic compounds formed sequentially from the Au stud bump. The microstructure of the solder joints did not change significantly even after multiple reflows. The AuSn₄ was the main phase after reflow because of the fast dissolution of Au. In the solder joints fabricated using Cu stud bumps, the scallop-type Cu₆Sn₅ intermetallic was formed only at the Cu interface, and the solder was the main phase. The difference in the microstructure of the solder joints with Au and Cu stud bumps resulted from the dissolution-rate difference of Au and Cu into the solder.     

A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology

This paper presents a dual-band voltage-controlled oscillator (VCO) that can be reconfigured between 6- and 9-GHz frequency bands. It comprises a 6-GHz LC-tuned VCO, two 1/2 dividers, two mixers, and two 3-GHz notch filters. The 9-GHz output is generated based on the analog frequency multiplication method by mixing the 6-GHz VCO output with its divide-by-two signal. The VCO, implemented in a 0.18-/spl mu/m SiGe BiCMOS technology, achieves a fast reconfiguration time of 3.6 ns. The measured VCO phase noises are -106 and -104 dBc/Hz at 1-MHz offset for 6- and 9-GHz modes, respectively, while draining 10.8 mA from a 1.8-V supply.