The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

Degradation of junction leakage in devices subjected to gateoxidation in nitrous oxide [MOS transistors]

Nitrided gate oxides offer several electrical and reliability advantages over conventional oxides and also provide a good barrier against impurity diffusion. Oxidation in nitrous oxide (N₂O) has been very successful in overcoming some of the problems associated with nitridation in ammonia. The authors have observed that the extent of N₂O oxidation has a strong detrimental effect on the drain leakage current of MOS transistors in the off state. This phenomenon has been identified to be caused by an increase in the active area junction leakage current     

Multi-H phase-coded modulations with asymmetric modulationindexes

Multi-H phase-coded modulation (MHPM) is a bandwidth-efficient modulation scheme which offers substantial coding gain over conventional digital modulation schemes. MHPM with asymmetric modulation indices corresponding to the bipolar data +1 and -1 is considered, and numerical results for the minimum Euclidean distances are provided. It is shown that performance improvements on the error probability over conventional MHPM are gained with essentially the same bandwidth and a very slight modification in implementation. The upper bounds on the error probabilities as functions of observation intervals and received E_b/N₀ are also investigated in detail. It is concluded that the concept of asymmetric modulation indices for MHPM is attractive for bandwidth and power-efficient modulation     

Two-level optimal output feedback stabilizer design

Design of two-level system stabilizers is considered using an optimal reduced-order model whose state variables are torque angles and speeds. The reduced-order model retains their physical meaning and is used to design a two-level linear feedback controller that takes into account the realities and constraints of the electrical power systems. The two-level control strategy is used, and a global control signal is generated from the output variables to minimize the effect of interaction. The effectiveness of this controller is evaluated, and an example, the multimachine system, is given to illustrate the advantages of the proposed method. The responses of the system with the two-level scheme and optimal reduced order scheme are included for comparative analyses     

Nickel and chromium cycles: Stocks and flows project part IV

Nickel and chromium are essential ingredients in alloys increasingly important for energy-efficient, environmentally friendly modern technology. Quantitative assessment of the flows of these metals through the world economy from resource extraction to final disposal informs resource policy, energy planning, environmental science, and waste management. This article summarizes the worldwide technological cycles of nickel and chromium in 2000. Stainless steel is the major use of these metals, but they serve numerous other special needs, as in superalloys for high-temperature service, as plating materials, and in coinage. Because they are used primarily in alloys, novel recycling issues arise as their use becomes more widespread. “... the great New York and St. Louis double track, nickel plated railroad...” — Norwalk, Ohio, Chronicle 10 March 1881 announces arrival of surveyors for the future Nickel Plate Railway “Later [1911] I formed an alloy of Iron and Chromium, which showed remarkable resistance to rust and tarnish ... [It was] rediscovered by an Englishman named Brearley, in 1914.” —Elwood Haynes to Stephen F. Roberts, 17 January 1925     

Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study

A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with 1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers. Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332 cm⁻¹ and a peak at ∼1,580 cm⁻¹ for both samples.