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71.
72.
分析总结现有地下工程围护结构传热研究不足的基础上,对实际贴壁式和离壁式衬砌地下工程围护结构进行合理的物理数学简化,建立了热传递过程的数学模型.该数学模型中详细考察了不同的边界条件.有限单元法对复杂区域具有良好的适应性,论述了有限单元法在地下工程维护结构传热中的应用. 相似文献
73.
借助热分析仪对MMH微晶进行了TG和DTG分析,研究了MMH微晶中各种水分的相对含量。提出MMH微晶中存在4种水分,即自由水、松散吸附水和紧密吸附水、结晶水和羟基水,给出了MMH微晶的完整表达式,即 MgAl_(0.965)(OH)_(4.75)Cl_(0.145·1.70)H_2O。 相似文献
74.
75.
Hao Long Yang Wei Tongjun Yu Zhe Wang Chuanyu Jia Zhijian Yang Guoyi Zhang Shoushan Fan 《Nano Research》2012,5(9):646-653
A novel carbon nanotube-patterned sapphire substrate (CPSS) has been utilized for the growth of GaN material and fabrication of a InGaN/GaN light emitting diode (LED) by metal-organic vapor phase epitaxy. Different lateral strain distributions and stress reductions were observed in a GaN thin film on CPSS compared with those on a conventional sapphire substrate. Nanoheteroepitaxy induced by small size nucleation islands of about 50 nm is ascribed to this significant strain modulation. The crystalline quality of the GaN thin film was also improved, as illustrated by X-ray diffraction. Performances of 1 mm × 1 mm LEDs on CPSS were also enhanced, with an operational power increase of 37.5% and higher saturation current. 相似文献
76.
77.
78.
Chunjie Wang Yue Wang Yongliang Cheng Wenzhi Huang Zuhair S. Khan Xizhi Fan Ying Wang Binglin Zou Xueqiang Cao 《Journal of Materials Science》2012,47(10):4392-4399
Rare earth zirconates (Ln2Zr2O7, Ln = La, Nd, Sm, and Gd) with pyrochlore structure were prepared by hydrothermal method with polyethylene glycol as surfactant.
X-ray diffraction, thermogravimetric analysis/differential scanning calorimetry, Fourier transform infrared spectroscopy,
Raman spectroscopy, and field emission scanning electron microscopy were utilized to characterize the phase structure, thermal
decomposition, and morphology of the products. Qualitative analysis indicates that the as-prepared zirconates are pyrochlore-type
structures. The specific surface area, lattice parameter, and average crystallite size of the as-prepared products are closely
related to the ionic radius. The activation energy of crystal growth shows an increasing trend with the decrease in ionic
radii. The sintering behavior of compacted body was also investigated, revealing that the sintering-resistance properties
of Ln2Zr2O7 are descending as the order of La2Zr2O7, Nd2Zr2O7, Sm2Zr2O7, and Gd2Zr2O7. 相似文献
79.
Ping Fan Jing-rong Chi Guang-xing Liang Xing-min Cai Dong-ping Zhang Zhuang-hao Zheng Peng-ju Cao Tiao-bao Chen 《Journal of Materials Science: Materials in Electronics》2012,23(11):1957-1960
Cu(In, Ga)Se2 (CIGS) thin films were fabricated by ion beam sputtering deposition from a single quaternary target at different substrate temperatures (T sub). The thin films were characterized with X-ray diffractometry, scanning electron microscopy, energy-dispersive X-ray spectroscopy and four-point probe technique to study the microstructures, surface morphology, composition and electrical properties, respectively. The results show that the films grown above 400?°C are of chalcopyrite structure. Cu(In0.7Ga0.3)Se2 thin film was obtained when T sub is 550?°C. The Cu and Se atomic percentage when T sub is above 500?°C is higher than when T sub is below 500?°C. With the increase in T sub, the surfaces morphology of the films is denser and the resistivity of the films decreases. 相似文献
80.
During research on different stan- dards for electrical accessories and household electrical appliances it has been suggested that to connect Chinese standards to IEC(International Electrotechnical Commission)standards we should carry out essential innovations based on assimilat- ing according to our own practical conditions.This method is the only way to standardize and at the same time maintain Chinese characteristics. 相似文献