钇铁石榴石薄膜材料的光吸收谱及Bi,Al掺入对谱的影响研究

采用单离子晶场跃迁模型，拟合出钇铁石榴石（ＹＩＧ）薄膜材料的光吸收谱，与实验谱吻合得较好。从实验和理论上分析了（ＢＩＡＩ）ＹＩＧ 薄膜材料的光吸收谱，结果表明，Ａｌ３＋离子的作用如同稀释剂一样，减小了光吸收，Ｂｉ３＋离子由于其强的自旋轨道耦合作用，增大了跃迁振子强度和跃迁线宽，从而增大了光吸收损耗，在此基础上所作的（ＢｉＡｌ）ＹＩＧ的理论谱与实验谱符合得较好。     

Ni对球墨铸铁热处理的影响

采用电子探针，图象分析仪、差质变分析仪和Ｘ射线衍仪定量研究了Ｎｉ在球铁中的分布和Ｎｉ铸态球铁组成相比例奥氏体中含碳量以及贝氏体转变ＴＴＴ曲线线的影响，结果表明，Ｎｉ在球铁中呈连续负偏析，其加入可以影响球铁组成上比例，并使粤氏体中含碳量和贝氏体转变孕育期期增加。     

Cloning and sequencing of a tpr-met oncogene cDNA isolated from MNNG-transformed human XP fibroblasts

A rearranged tpr-met oncogene was identified in a MNNG-transformed human Xeroderma pigmentosum (XP) cell line (ASKMN). A 2016 bp cDNA was cloned and sequenced, disclosing an ORF with a coding capacity for a 523 aa protein. The sequence of this tpr-met cDNA was very similar to that previously reported in another human MNNG-transformed cell line (MNNG-HOS).     

铯原子激光共振电离

用Ｎｄ：ＹＡＧ及其泵浦的染料激光进行铯原子三步共振电离。求解了非饱和共振过程速率方程，计算出基态和激发态共振吸收截面，给出电离效率分别与激发电离速率以及作用时间的变化关系，得到饱和激发电离的流量条件和通量条件。     

人工智能方法用于熔喷过程在线检测的研究

熔喷生产最终产品质量的控制，对于过程优化具有重要的意义。产品质量的在线检测是过程监测与质量控制必不可少的。本文首次在熔喷系统中引入人工智能的研究方法，对熔喷非织造布的厚度与纤维直径进行在线预测。实测数据与人工神经网络的预测结果吻合较好，从而证实了人工神经网络用于模拟熔喷过程的可行性。网络的输入包括：挤出机温度、喷头温度、熔融体挤出速率、空气流率及接收距离。神经元计算的输出是纤维直径与熔喷非织布的厚度。文中进一步提出了将神经网络与专家系统相结合的研究路线，以实现熔喷过程的优化控制。     

可调90°偏振面旋转器

给出一种可调式90°偏振面旋转器。调整复合片快轴的夹角α,便能在可见光范围内使用.     

国外模拟IC的发展现状分析

本文主要根据电子整机的发展要求,从集成化、高性能和高可靠等三方面分析国外模似IC的发展,进而说明模拟IC总的发展趋势及其表现。最后指出,模拟IC正面临一个新的变革时期。     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.