Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

Electrochemical synthesis and characterization of chloride doped polyaniline

Chloride doped polyaniline conducting polymer films have been prepared in a protic acid medium (HCl) by potentiodynamic method in an electrochemical cell and studied by cyclic voltammetry and FTIR techniques. The FTIR spectra confirmed Cl^- ion doping in the polymers. The polymerization rate was found to increase with increasing concentration of aniline monomer. But the films obtained at high monomer concentration were rough having a nonuniform flaky polyaniline distribution. Results showed that the polymerization rate did not increase beyond a critical HCl concentration. Cyclic voltammetry suggested that, the oxidation-reduction current increased with an increase in scan rate and that the undoped polyaniline films were not hygroscopic whereas chloride doped polyaniline films were found to be highly hygroscopic.     

Quasi-static stress fields for a crack inclined to the property gradation in functionally graded materials

Summary.  Quasi-static stress fields for a crack inclined to the direction of property gradation in functionally graded materials (FGMs) are obtained through an asymptotic analysis coupled with Westergaard's stress function approach. The elastic modulus of the FGM is assumed to vary exponentially along the gradation direction. The mode mixity due to the inclination of the property gradient is accommodated in the analysis through superposition of opening and shear modes. The first four terms in the expansion of the stress field are derived to explicitly bring out the influence of nonhomogeneity on the structure of the stress field. Using these stress field contours of constant maximum shear stress, constant maximum principal stress, constant first stress invariant and constant out of plane displacement are generated, and the effect of inclination of the property gradation direction on these contours is discussed. Received September 22, 2002 Published online: May 20, 2003 The financial support of National Science Foundation (NSF) under grant no. CMS 99000138 is gratefully acknowledged.     

Electrical Properties of GeO2–NiO Materials Containing Ni2GeO4

The GeO₂–NiO system is studied in the stability range of Ni₂GeO₄ by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined.     

A multigrid accelerated hybrid unstructured mesh method for 3D compressible turbulent flow

 A cell vertex finite volume method for the solution of steady compressible turbulent flow problems on unstructured hybrid meshes of tetrahedra, prisms, pyramids and hexahedra is described. These hybrid meshes are constructed by firstly discretising the computational domain using tetrahedral elements and then by merging certain tetrahedra. A one equation turbulence model is employed and the solution of the steady flow equations is obtained by explicit relaxation. The solution process is accelerated by the addition of a multigrid method, in which the coarse meshes are generated by agglomeration, and by parallelisation. The approach is shown to be effective for the simulation of a number of 3D flows of current practical interest. Sponsored by The Research Council of Norway, project number 125676/410 Dedicated to the memory of Prof. Mike Crisfield, a respected colleague     

Catalytic aminolysis of epoxide by alumina prepared from amine-protected Al precursor

The catalytic activities of alumina prepared from an Al alkoxide-amine adduct monomer for the reaction of cyclopentene oxide with piperidine was determined after various pretreatments, including calcination and exposure to moisture. They were compared with the activity of alumina prepared by the conventional hydrolysis method. It was found that the as-prepared sample from the alkoxide-amine monomer preparation was five times more active than a conventional preparation, suggesting that it has a higher density of surface Lewis acid sites. However, its activity was much more severely suppressed by exposure to moisture.     

Nonlinearity analysis and optimization of HBTs for optical mixer designs

Two types of photo heterojunction bipolar transistor (HBT) to directly down-convert optical signals to electronic signals have been reported in the literature: a conventional photo-HBT in which light penetrates through the area of the base-collector junction and an HBT where light shines through the base-collector edge for higher conversion efficiency. Although the performance in relation to bias conditions has been published, the detailed analyses for identifying the parameters and bias conditions that provide optimum direct down-conversion have not been examined. This paper provides a full explanation of the operation of the down-conversion for both HBT configurations based on low-frequency analyses. Such information is useful for both understanding the nonlinear mechanisms involved and designing for maximum efficiency. In addition, a new circuit has been developed from the basic HBT down-conversion circuit that provides improved performance.     

Techniques for high-frequency integrated test and measurement

This paper describes techniques for the on-chip measurement of high-frequency and/or high-bandwidth electrical phenomena in ultra large-scale integration environments. The techniques rely on the integration of multiple compact and robust electronic test devices, or cores, at various locations within an integrated circuit. The cores consist primarily of signal generators that approximate the output of a sigma-delta modulator using finite repetitious bit patterns and a small set of highly robust analog components. They are capable of digitizing on-chip signals at gigahertz rates even using low-cost manufacturing processes. Simple communication between the multiple cores enables the migration of many "board-level" type measurements down to the chip level.