Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

巧点火锅鸳鸯谱

北风起．火锅热。户外寒气逼人，屋内热气腾腾．鲜红的肉片。翠生生的青菜．在或红或白滚烫的锅中上下飞舞，仅是这灵动的姿态就让人禁受不住媚惑，抬手、举箸．一番狼吞虎咽，于是热气从心底缓缓升起，寒冷顿时一扫而空。[编者按]     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.     

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)₃phen (DBM = dibenzoylmethane), Yb(DNM)₃phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C₅H₅)Co{P(O)Et₂}₃]^–) have been studied. EL devices composed of Yb(DNM)₃phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)₃phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)₃phen and Yb(DNM)₃phen are, respectively, 7 × 10^–5 (at 6 V and at 0.81 mA mm^–2) and 4 × 10^–4 (at 7 V, and 0.74 mA mm^–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)₃phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.     

Three-temperature modeling of carrier-phonon interactions in thin GaAs film structures irradiated by picosecond pulse lasers

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.     

A new loss recovery architecture for wireless TCP

The loss recovery architecture of TCP under wireless environment is considered. We propose sent-time ordered two lists architecture as an alternative to sequence number ordered single list architecture. By keeping the sent-time order, the recovery mechanism can be more efficient and-simpler and transmission decision is decoupled from loss recovery using the second list. Simulation results show the superiority of our mechanism.     

环缝错边容器的有限元分析与容限探讨

采用有限元方法对 1台封头与筒体具有较大错边量的容器进行了应力分析 ,得到了错边区域的应力分布状况 ,并对其进行应力强度评定。结果表明 ,该容器错边部位的应力是满足应力分析准则的。通过对存在不同错边量的容器进行应力分析 ,探讨了容器的错边容限 ,对含有错边缺陷在役容器是否合乎使用的判断具有一定指导意义     

纸张用有机硅抗水剂的制备

采用氨基硅油、十二烷基三甲氧基硅烷、甲基三乙氧基硅烷配成11种抗水剂,用于纸张的抗水处理.通过渗透法和接触角法测试发现,有机硅抗水剂对实验选择的9种纸张均有明显的抗水效果;其中采用氨基硅油配制的抗水剂效果最好,经其处理的生宣纸与空白样相比,接触角由完全润湿提高到125°,渗透时间由0提高到18 s.最佳应用工艺为:将氨基硅油配制成质量分数为2.041%的甲苯溶液,按照10g/m2的涂布量喷涂于纸张表面,自然晾干3～5天至恒定质量.