令牌多环网性能—可靠性综合评价

网络的性能与可靠性已分别得到广泛的研究,然而,怎样分析具有容错机制的环网的性能仍属有待开拓的研究领域,本文提出了一种分析具有自修复机制的多环网络系统的方法,并给出了报文传输时间分布的拉氏变换式,平均等待时间及平均队列长度公式,分析结果可用于评估故障与修复过程对实时令牌环网的实时响应特性的影响,对基于LAN的分布式实时系统设计具有指导意义。     

评定飞航导弹单发命中概率的方法研究

通过对抽样检验方法的研究,确立了区间估计的下限公式,用来在已知样本值的情况下确定导弹单发命中概率出现在该区间内的置信水平和精确度。     

江苏省本地电话网结构与发展

分片汇接的网状网结构是江苏省本地电话网的基本框架,而汇接局和连接汇接局的传输系统则是网路规划与通信建设的重点。     

输入——输出迭代算法中松弛因子的确定

本文利用变分的手段提示了输入—输出迭代算法中松弛因子的取值规律。     

β－C_2S固溶体稳定的热力学研究

从热力学理论出发，利用Ｘ射线衍射定性和定量的方法，对β－Ｃ＿２Ｓ固溶体的稳定性进行了分析和研究。经热力学理论推导得出β－Ｃ＿２Ｓ稳定的热力学条件，即掺入的微量元素的化学位μ＿ｉ须小于β－Ｃ＿２Ｓ的反应自由焓△Ｇ＿β，μ＿ｉ＜△Ｇ＿β．并定量地计算出一种微量元素稳定β－Ｃ＿２Ｓ的临界掺加量为；多种微量元素对β－Ｃ＿２Ｓ的稳定性判断条件为：     

Composition Dependence and Irradation Effects on Residual Resistivity in Cu-Al Alloys

Residual electrical resistivity due to short-range order has been calculated for Cu100-xAlx (x=9.13,13.56, 14.5 and 14.76 in at pct) alloys using pseudopotential approach, and the results have been discussed in the light of experimental studies of the local-order structure of these alloys. In case of Cu85.5Al14.5, change in the total residual electrical resistivity due to neutron-irradiation effects has been estimated by including contributions from the short-range order and static atomic displacement correction. Our results show a decrease in the residual resistivity in the irradiated Cu-Al solid solution as compared to the unirradiated sample. This is in accordance with the experimental results     

机床工具产品色彩造型初探

本文针对我国机床工具产品色彩设计的现状,结合具体实例,对色彩造型的实质做了初步的探讨。分析了色彩造型和色彩装饰两种设计观和实践效果;以色彩与形状关系及作用的论证为引,论述色彩造型的三大功能作用。并提出可供机床工具产品色彩设计参考的具体设计方法和手段。     

原料扩重的中压加氢改质装置投产

介绍燕山石化公司为扩大1Mt／a中压加氢改质装置的原料来源，改用大庆减二线油和重油催化裂化柴油组成的混合料开工投产的经验以及装置初期的运行条件。中压加氢改质技术可以生产优质柴油和蒸汽裂解制乙烯的原料，还可增产喷气燃料。     

Alkali-metal Na Adsorption and Promoted Oxidation on Si(100)2×1 Surface

The alkali-metal Na adsorption on Si(100)2×1 surface and its promoted oxidation and Si oxidegrowth have been investigated by means of thermal desorption,work function,Auger electronspectroscopy and photoemission electron spectroscopy.The experimental data showed that therewas a new state,interface electron state,near the Fermi level after the deposition of Na atoms.It wasfound that the presence of Na always caused an increase of the oxygen initial uptake whereas thepromotion of Si oxide growth was observed only at the coverage of Na greater than 0.5 ML.A newmechanism of Na-promoted Si oxide growth is suggested in this paper.