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991.
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994.
从齿轮受力和失效特点出发,通过金相检验分析,指出了渗碳层中的碳化物对齿轮强度有害,渗碳淬火后的齿面应避免出现碳化物.在实际生产中为了使齿根含碳量接近共析成分,以齿顶部出现少量碳化物为宜. 相似文献
995.
高振实密度球形镍粉研制 总被引:1,自引:0,他引:1
论述了液相还原法直接制备高振实密度球形镍粉的新工艺。原料采用NiSO4·5H2O,利用NaOH调节溶液的pH值并形成Ni(OH)2,还原剂采用N2H4·H2O,还原过程中加入晶核引发剂及表面活性剂。研究工作采用正交试验法安排实验,分析了对镍粉的振实密度及粒径的影响因素之主次顺序,得出实验室规模的较优工艺组合条件为: g (N2H4·H2O/Ni2+)≥2.2;反应时间为24 min左右;Ni2+的浓度为2.0 mol/L;g (NaOH/Ni2+)为1.1;反应温度为80℃。新工艺可制备振实密度高达3.0以上、质量中位径约为1 mm的高质量球形镍粉。 相似文献
996.
997.
Jianxun Zhu Shuang He Huayang Tian Yiming Hu Chen Xin Xiaoxin Xie Lipeng Zhang Jian Gao Shu-Meng Hao Weidong Zhou Liqun Zhang 《Advanced functional materials》2023,33(25):2301165
Trace N, N-dimethylformamide(DMF) containing composite polymer electrolytes (CPEs) has attracted much attention owing to the dramatically increased Li+-conductivity. But the amount of DMF is critical and needs to be clarified for the interfacial stability, since DMF is easily reduced by Li-metal. Herein, the influences of DMF in poly(ethylene oxide) (PEO) and poly(vinylidene fluoride) (PVDF) based CPEs are studied on the Li+-conductivity and interfacial stability. In PEO-based CPEs, owing to a stronger interaction of lithium bis(trifluoromethanesulfon)imide (LiTFSI) with PEO than DMF, DMF can not be confined and be easily evaporated off. Only ≈0.25wt.% DMF is absorbed on ceramic electrolyte fillers, giving two times increased Li+-conductivity compared with the DMF-free counterparts and generating stable interface with Li-metal; but over much DMF (≥2.2 wt.%) leads to serious interfacial reactions with Li-metal. While in PVDF-based CPEs, ≈8wt.% DMF is confined by LiTFSI owing to a stronger interaction of LiTFSI with DMF than with PVDF. Short-term stable interface with Li-metal can be obtained, but longer-term cycling or higher current density leads to the gradually aggravated reactions with Li-metal. Thanks to the high-voltage stability of PVDF based CPEs, better cycling performance is obtained when they are used as catholytes to match high-voltage cathodes. 相似文献
998.
999.
Dynamic Survivability in WDM Mesh Networks Under Dynamic Traffic 总被引:3,自引:0,他引:3
Network survivability is a crucial requirement in WDM mesh networks. In this paper, we systematically consider the problem of dynamic survivability with dynamic single link failure in WDM networks under dynamic traffic demands. Specifically, we investigate various protection schemes, such as dedicated path protection (DPP), shared path protection (SPP), dedicated link protection (DLP), shared link protection (SLP), and two restoration schemes, path restoration (PR) and link restoration (LR). Moreover, two new shared protection methods are proposed, i.e., SRLG-based shared link protection (SRLG-SLP) and SRLG-based shared path protection (SRLG-SPP). The SRLG (shared risk link group) constraint defines the availability of protection resources to a working path, which requires that any two working paths sharing the same risk of failure (or in the same SRLG) cannot share the same protection resources. Furthermore, in our study, we consider a more practical dynamic single-link failure model, in which the link-failure-interarrival time and link-failure-holding time are considered as two independent parameters. Based on this link-failure model, extensive simulations are done to analyze and compare the dynamic survivable performance of various protection and restoration schemes. Resource utilization, protection efficiency, restoration efficiency, and service disruption ratio are employed as survivable performance metrics versus traffic load, link-failure frequency, and link-failure reparation time to evaluate the survivable performance. Many meaningful results are given. In addition, we show that the developed SRLG-SLP and SRLG-SPP protection schemes perform very well in terms of protection efficiency and service disruption ratio, while sacrificing some performance in terms of resource utilization. 相似文献
1000.
Urteaga M. Scott D. Krishnan S. Yun Wei Dahlstrom M. Griffith Z. Parthasarathy N. Rodwell M.J.W. 《Solid-State Circuits, IEEE Journal of》2003,38(9):1451-1456
We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one design demonstrating 12.0-dB gain at 170 GHz and a second design exhibiting 8.5-dB gain at 195 GHz. 相似文献