A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

A new millimeter-wave step-frequency radar sensor for distancemeasurement

A new compact millimeter-wave distance-measurement sensor prototype has been developed. The sensor is a step-frequency radar implemented using coherent heterodyne technique. It operates in Ka-band (26.5-40 GHz) and is realized using MICs and MMICs. The sensor transmits sinusoidal signals of incremental frequencies and demodulates the received signals into base-band I/Q signals for processing. Experimental results show that the sensor is capable of measuring distance with less than 0.2 inch of absolute error and a low transmitted power of only -20±3 dBm     

Stress analysis of a cantilevered fixed partial denture with normal and reduced bone support

A two-dimensional finite element model was constructed to analyze the simulated mechanical behavior of a cantilevered fixed partial denture. The variations of the models were made by altering the degree of bone support, the number of splinted abutments, and the length of the pontics. High stress concentrations were observed around the connectors of the fixed prosthesis and the tooth closest to the cantilever. Reduced bone support increased the deflection and stress concentrations. There was reduction in displacement and stress concentration when the teeth were splinted together. To improve the prognosis of the fixed partial denture cantilever, the number of abutments should be increased and the number of pontics decreased.     

Topology design and bridge-capacity assignment for interconnecting token ring LANs: A simulated annealing approach

We address the problem of determining the topology and bridge-capacity assignments for a network connecting a number of token rings via source-routing bridges. The objective is to minimize the cost of bridge installations while meeting the network users' performance requirements. The problem is modeled as a mixed 0–1 integer program. A comparison is given between two solution algorithms: a simulated annealing algorithm using the flow-deviation algorithm for each routing subproblem, and a drop algorithm using the simplex method for the same subproblems to provide benchmark solutions. In the former algorithm, the routing subproblem is formulated as a nonlinear program with penalty functions to model node and link capacity constraints, and in the latter as a multicommodity flow model with the same capacity constraints. Computational results show that the simulated-annealing/flow-deviation algorithm produced substantially better solutions than the LP-based drop algorithm.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

Apoptosis as a cause of death in measles virus-infected cells

To determine the mechanism of measles virus-induced cell death, we studied the infection of Vero cells and monocytic cell lines with wild-type (Chicago-1) and vaccine (Edmonston) strains of measles virus. DNA fragmentation indicative of apoptosis was apparent by flow cytometry, agarose gel electrophoresis, and electron microscopy. Within syncytia, DNA strand breaks were demonstrated by end labeling with terminal transferase and then by visualization.     

Mode analysis of DFB SE lasers

This paper presents theoretical results on mode characteristics of surface-emitting (SE) lasers utilizing an active second-order grating section. Based on a coupled-mode approach, longitudinal modes and the associated space-harmonic transverse modes are calculated via a numerical technique. From these, the lasing-mode spectrum, near- and far-field patterns of the radiation mode, and the surface-emission power efficiency are obtained. Effects of the substrate reflector and the grating parameters are also investigated. Finally, comparisons are made with conventional, edge-emitting DFB lasers. The results indicate that with a suitable choice of structural parameter values, DFB SE lasers can be made to possess both the spectral discrimination of the conventional DFB lasers and the advantages of SE lasers at the same time and also that the second lowest longitudinal mode may be preferred over the fundamental longitudinal mode for many applications due to its symmetric field distribution