Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

Transient hot-electron effect and its impact on circuit reliability

Transient hot-electron effect and its impact on circuit reliability are investigated. The rate of device decay is monitored as a function of the gate pulse transient period. Simulation results reveal that excess charges during a fast turn off time may cause an increase in the maximum substrate current. This, along with our experimental data, identifies that transient excess carrier may cause the enhancement of device degradation under certain stress conditions. The enhancement factor of the degradation is a function of the gate pulse transient time. Correlation between the analysis based upon AC/DC measurement and calculations based upon transient simulation are shown in the paper. Better agreement with experimental data is obtained by using the transient analysis and on chip test/stress structures. The correlation between AC and DC stress data is also shown based on the impact ionization model. A hot-electron design guideline is proposed based on the circuit reliability analysis. This guideline can help improve the circuit reliability without adversely effecting the circuit performance.     

Applications of the finite difference techniques to the compensatedVIP 3 dB directional coupler

A new and simple compensated structure for a vertically installed planar (VIP) 3 dB directional coupler has been studied theoretically as well as experimentally by combining an improved 2-D-general finite difference (2-D-GFD) design procedure with a three-dimensional finite difference time domain (3-D-FDTD) method. The obtained full wave analysis results agree well with the measured ones. The investigations have shown that with this planar compensated structure, a better performance of the VIP coupler in the L-band can be realized by only using the same kind of dielectric substrate for its vertical and horizontal one     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

岩心PI值试验研究及应用

主要论述了在多功能采油化学用剂评价仪上进行的岩心ＰＩ值试验的步骤，现象及结论。重点考察了岩心ＰＩ值与渗透率、流量及注入截面面积的关系；平行管岩心复合ＰＩ值和其中单管岩心ＰＩ值的关系。     

各种状态的液体通过核孔膜的规律

介绍了液体通过核孔膜规律方面取得的新认识，包括：（１）纯净液体通过核孔膜的规律；（２）核孔膜测定液体粘滞系数的各种方法；（３）各种物质溶液浓度的核孔膜测定；（４）液相混合物快速分离和化学分离；（５）流体中固体微粒对核孔膜的堵塞及其公式；（６）用核孔膜滤除液中各各斩规律。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process