Ultrathin Sticker‐Type ZnO Thin Film Transistors Formed by Transfer Printing via Topological Confinement of Water‐Soluble Sacrificial Polymer in Dimple Structure

To create ultrathin sticker‐type electronic devices that can be attached to unconventional substrates, it is highly desirable to develop printable membrane‐type electronics on a handling substrate and then transfer the printing to a target surface. A facile method is presented for high‐efficiency transfer printing by controlling the interfacial adhesion between a handling substrate and an ultrathin substrate in a systematic manner under mild conditions. A water‐soluble sacrificial polymer layer is employed on a dimpled handling substrate, which enables the topological confinement of the polymer residue inside and near the dimples during the etching and drying processes to reduce the interfacial adhesion gently, creating a high yield of transfer printing in a deterministic manner. As an example of an electronic device that was created using this method, a highly flexible sticker‐type ZnO thin film transistor was successfully developed with a thickness of 13 μm including a printable ultrathin substrate, which can be attached to various substrates, such as paper, plastic, and stickers.     

High‐Mobility n‐Type Organic Transistors Based on a Crystallized Diketopyrrolopyrrole Derivative

A new high‐performing small molecule n‐channel semiconductor based on diketopyrrolopyrrole (DPP), 2,2′‐(5,5′‐(2,5‐bis(2‐ethylhexyl)‐3,6‐dioxo‐2,3,5,6‐tetrahydropyrrolo[3,4‐c]pyrrole‐1,4‐diyl)bis(thiophene‐5,2‐diyl))bis(methan‐1‐yl‐1‐ylidene)dimalononitrile (DPP‐T‐DCV), is successfully synthesized. The frontier molecular orbitals in this designed structure are elaborately tuned by introducing a strong electron‐accepting functionality (dicyanovinyl). The well‐defined lamellar structures of the crystals display a uniform terrace step height corresponding to a molecular monolayer in the solid‐state. As a result of this tuning and the remarkable crystallinity derived from the conformational planarity, organic field‐effect transistors (OFETs) based on dense‐packed solution‐processed single‐crystals of DPP‐T‐DCV exhibit an electron mobility (μ_e) up to 0.96 cm² V^?1 s^?1, one of the highest values yet obtained for DPP derivative‐based n‐channel OFETs. Polycrystalline OFETs show promise (with an μ_e up to 0.64 cm² V^?1 s^?1) for practical utility in organic device applications.     

Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters

We correlate the failure in miniature X‐ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X‐ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X‐ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X‐ray tubes.     

Double S-Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3-Hf0.5Zr0.5O2-Al2O3 Triple-Layer Structure

The negative capacitance (NC) effect, recently discovered in a fluorite-based ferroelectric thin film, has attracted great attention as a rescue to overcome the scaling limitations of the conventional memory and logic devices of highly integrated circuits. The NC effect manifesting an S-shaped polarization–voltage (P–V) curve is initially interpreted by a 1-dimensional Landau Ginzburg Devonshire (LGD) model. However, a series of recent studies have found that this effect can also be explained by the inhomogeneous stray field energy (ISE) model. In this study, by extending the ISE model in the ferroelectric (FE)-dielectric (DE) layered structure, an analytical model that considers the influence of the interfacial screening charge distribution is presented. This model showed that the NC effect in the FE-DE heterostructure can be manifested in various forms other than a single S-shaped P–V curve. In particular, a double S-shaped P–V curve is expected from the fully compensated anti-parallel domain structure, confirmed experimentally in the actual Al₂O₃/(Hf_0.5Zr_0.5)O₂/Al₂O₃ triple-layer structure. Furthermore, to reveal the origin of the double S-shaped P–V curve, a multidomain LGD model is presented. It is confirmed that this phenomenon is attributed to the evolution of inhomogeneous stray field energy.     

New approach to SRM drive with six-switch converter

This paper presents novel topologies implementation for Switched Reluctance Motor (SRM) drive used in commercial applications. For effective utilization of the developed system, a novel direct current controlled PWM scheme is designed and implemented to produce the desired dynamic speed characteristic. In comparison to conventional asymmetric converter topology, it can minimize entire system costs by reducing numbers of power semiconductors. Therefore, it may open up investigation of a new way for SRM to compete with other ac motors such as induction motors, brushless dc motors, etc. The validity of the proposed method is verified through theoretical explanation and experimental results.     

A design of a high-speed and high-efficiency capsule endoscopy system

This paper presents a high-speed and high-efficiency capsule endoscopy system. Both a transmitter and a receiver were optimized for its application through an analysis of the human body channel. ON-OFF keying modulation is utilized to achieve low power consumption of the in-body transmitter. A low drop output regulator is adopted to prevent performance degradation in the event of a voltage drop in the battery. The receiver adopts superheterodyne structure to obtain high sensitivity, considering the link budget from the previous analysis. The receiver and transmitter were fabricated using the CMOS 0.13-μm process. The output power of the transmitter is -1.6 dB·m and its efficiency is 27.7%. The minimum sensitivity of the receiver is -80 dB·m at a bit error ratio (BER) of 3 × 10 (-6). An outer wall loop antenna is adopted for the capsule system to ensure a small size. The integrated system is evaluated using a liquid human phantom and a living pig, resulting in clean captured images.     

Direct Physical Imaging and Chemical Probing of LiFePO4 for Lithium‐Ion Batteries

The control of unexpectedly rapid Li intercalation reactions without structural instability in olivine‐type LiFePO₄ nanocrystals is one of the notable scientific advances and new findings attained in materials physics and chemistry during the past decade. A variety of scientific studies and technological investigations have been carried out with LiFePO₄ to elucidate the origins of many peculiar physical aspects as well as to develop more effective synthetic processing techniques for better electrochemical performances. Among the several features of LiFePO₄ that have attracted much interest, in this article we address four important issues—regarding doping of aliovalent cations, distribution of Fe‐rich secondary metallic phases, nanoparticle formation during crystallization, and antisite Li/Fe partitioning—by means of straightforward atomic‐scale imaging and chemical probing. The direct observations in the present study provide significant insight into alternative efficient approaches to obtain conductive LiFePO₄ nanocrystals with controlled defect structures.     

Fault-Tolerant UAV Data Acquisition Schemes

Wireless Personal Communications - Through the use of UAV, the functional lifetime of WSN can be elongated in exchange for higher data delivery latency as the UAV replaces the multi-hop...     

Continuous Control of Charge Transport in Bi‐Deficient BiFeO3 Films Through Local Ferroelectric Switching

It is demonstrated that electric transport in Bi‐deficient Bi_1‐δFeO₃ ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi_1‐δFeO₃/SrRuO₃ thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi_1‐δFeO₃ film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi_1‐δFeO₃ act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.     

Highly Efficient Green ZnAgInS/ZnInS/ZnS QDs by a Strong Exothermic Reaction for Down‐Converted Green and Tripackage White LEDs

Highly efficient bright green‐emitting Zn?Ag?In?S (ZAIS)/Zn?In?S (ZIS)/ZnS alloy core/inner‐shell/shell quantum dots (QDs) are synthesized using a multistep hot injection method with a highly concentrated zinc acetate dihydrate precursor. ZAIS/ZIS/ZnS QD growth is realized via five sequential steps: a core growth process, a two‐step alloying–shelling process, and a two‐step shelling process. To enhance the photoluminescence quantum yield (PLQY), a ZIS inner‐shell is synthesized and added with a band gap located between the ZAIS alloy‐core and ZnS shell using a strong exothermic reaction. The synthesized ZAIS/ZIS/ZnS QDs shows a high PLQY of 87% with peak wavelength of 501 nm. Tripackage white down‐converted light‐emitting diodes (DC‐LEDs) are realized using an InGaN blue (B) LED, a green (G) ZAIS/ZIS/ZS QD‐based DC‐LED, and a red (R) Zn?Cu?In?S/ZnS QD‐based DC‐LED with correlated color temperature from 2700 to 10 000 K. The red, green, and blue tripackage white DC‐LEDs exhibit high luminous efficacy of 72 lm W^?1 and excellent color qualities (color rendering index (CRI, R_a) = 95 and the special CRI for red (R₉) = 93) at 2700 K.