计算机网络安全系统设计

分析了现代计算机网络所面临的威胁和各种安全问题,同时提出了在设计一个有关网络系统时应该考虑的一些安全问题,如网络安全策略与技术、网络的访问控制、网络数据加密技术、信息隐藏技术等安全问题。     

大规模定制环境下 ERP 的发展

ERP─EnterpriseResourcePlanning企业资源计划系统 ,是指建立在信息技术基础上 ,以系统化的管理思想 ,为现代企业决策层及员工提供决策运行手段的管理平台。从竞争环境的角度出发 ,提出了大规模定制已经逐渐成熟并最终取代大规模生产成为新的生产经营模式的观点 ,同时 ,分析了在大规模定制下传统ERP的局限 ,从管理和技术的角度探讨新一代ERP的特点及发展。     

加油站油品损耗的管理问题分析及解决办法

针对加油站在油品进、销、存方面因管理和人为作弊而产生的损耗大问题，提出了解决办法：各环节交接手续要严密完备；发货方实施保量运输，选择信誉好的承运方；在销售、储存方面应加强管理，推行加油站计量员、账务员集中管理，主要账表电子表格化，及时上报主管部门，执行责任追究制并与效益工资挂钩。     

从科学、规范、监管三个方面下手提高CCC认证有效性

本文从科学、规范和监管三个方面出发,对提高认证有效性提出了几点建议.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

转炉溅渣护炉改质剂的开发研究

影响转炉溅渣护炉效果的关键因素是终渣成分的控制,采用改质剂对转炉终渣成分进行调整,降低渣中FeO含量和炉渣温度,提高MgO含量和炉渣熔点及粘度,有利于改善炉渣与炉衬的粘结效果,并提高溅渣层的耐蚀性能,缩短溅渣起孕时间,在一定程度上抑制炉渣中铁的氧化物与炉衬中石墨的反应.     

The pharmacokinetics of pancuronium bromide in infants, children and adults

Laparoscopic retroperitoneal lymph node dissection is a new surgical procedure used to enhance staging in men with clinical stage I nonseminomatous germ cell tumors of the testis. The procedure has been performed in a limited number of patients at several centers with extensive laparoscopic experience. Laparoscopic retroperitoneal lymphadenectomy is a technically demanding procedure which can be successfully completed in the majority of patients. However, the risk of complications is greater than in patients who undergo standard open retroperitoneal lymph node dissection. The primary advantage of a laparoscopic approach is shortened hospitalization and rapid return to normal activity. The role of laparoscopy in the management of patients with testis malignancy has not been defined. The use of this staging procedure may help minimize the need for surveillance studies following surgery and may be best utilized in men with a lower likelihood of nodal metastases. Ultimately, prospective study in large groups of patients will be necessary to determine the role of laparoscopic retroperitoneal lymph node dissection in patients with testis cancer.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

无线局域网安全问题研究

为了提供相当于有线局域网的数据安全,IEEE802.11定义了有线等价保密(WEP)协议。然而,最近的研究发现WEP存在严重的缺陷。介绍了无线局域网存在的安全隐患,分析了WEP的结构以及WEP协议的缺陷以及可能遭受的攻击,并探讨了改进方案。