Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

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通过对J.J.Arps方程的推导,提出了油气藏产量递减曲线分析的最佳拟合法。用该法可直接求出递减指数N、初始递减率D1及油气递减前的稳定产量Qi,避免了使用试差法的大量运算过程,大大提高了油气藏工程中指标预测的精度。     

前馈和反馈相结合的控制策略在宝钢线材厂控冷轧线上的应用实践

在详细分析料坯在水箱内冷却热过程特点的基础上，提出了前馈和反馈相结合的水流量优化控制策略，并将该策略应用于宝钢线材厂控冷轧线上。实际运行结果表明：该策略能够合理地控制水箱水流量，从而保证了线材水箱出口处的温度满足工艺要求，大大提高了线材成品的质量。所做工作对国内同类企业有重要的意义。     

螺杆泵采油工艺技术在埕岛油田的应用研究

针对埕岛油田的储积层特征和螺杆泵采油工艺的技术特点,开展了一系列的理论与实际的配套研究,从优化泵的设计,杆、管的配套,到采用软启、缓停等技术,逐步完善了螺杆泵采油工艺技术。该技术在胜利浅海埕岛油田的应用中取得了良好的效果,使螺杆泵平均检泵周期达到1172d,是国外同类螺杆泵的3倍以上。     

The use of doped polyaniline as an electrode in the galvanic anodic protection of ferrous metals in industrial acid solutions

In order to investigate the galvanic anodic protection (GAP) of ferrous metals (such as 410, 304 and 316 stainless steels) in acid solutions by doped polyaniline (PANi), separate doped PANi powder-pressed electrodes with different surface areas (the area ratio of the PANi electrode to stainless steel is between 1:1 and 1:2) have been prepared. These were coupled with ferrous metal in the following solutions: 5 M sulphuric acid, 5 M phosphoric acid and industrial phosphoric acid (containing 5 M phosphoric acid and 0.05% chloride ion) to construct a galvanic cell, in which PANi is cathode while ferrous metal is anode. The results indicate that a PANi electrode with sufficient area can provide corrosion protection to stainless steel in these acidic solutions. A pilot scale coupling experiment was carried out. The results indicate that PANi is a promising material as an electrode for the anodic protection of ferrous metals in acidic solutions in industrial situations.     

Interfacial reaction between CO2-CO gas and molten iron oxide containing P2O5

The interfacial reaction between CO₂-CO gas and molten iron oxide containing P₂O₅ was investigated by the ¹³CO₂-CO isotope exchange technique at 1773 K with CO₂/CO=1.0. The apparent rate constant rapidly decreased with the addition of P₂O₅ up to 2.86 mol pct PO_2.5 and the Fe³⁺/Fe²⁺ ratio kept constant at approximately 0.2. By the classic site blockage model, in which the reaction only occurs on the vacant sites, and the modified site blockage model, in which the reaction occurs on the vacant sites and the sites occupied by phosphorus simultaneously, the effect of the addition of P₂O₅ was analyzed and the reaction mechanism of CO₂ dissociation was discussed. It may be concluded that the dissociation of the adsorbed CO₂ molecule is reasonable as a rate-determining step and that the effect of phosphorus on the interfacial reaction is caused by the decrease in the number of active sites with the increase of phosphorus content as a surface active element in molten iron oxide.     

WCDMA的MBMS技术

主要介绍了基于WCDMA的MBMS技术,给出了其网络架构和技术难点,并对其应用给无线网络带来的影响作了一定深度的探讨。     

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