Dynamics of the transient buildup of emission inNd3+-doped fiber lasers

The two-stage process of the transient buildup of emission in Nd ⁴⁺-doped fiber lasers is described both experimentally and theoretically. After switching on the pump, spontaneous emission increases first until the gain becomes sufficient to compensate for the cavity losses; the laser field then develops and reaches the steady state after more or less regular oscillations. During this second stage, an almost chaotic spiking is obtained either for high pumping rates and/or at low temperatures. The whole set of these dynamical scenarios is not described under the usual assumptions of uniform cavity losses over the whole field spectrum and of pure homogeneous broadening for the transition line, but rather a modified form of the Maxwell-Bloch equations which retains some frequency dependence for the losses in the cavity and the inhomogeneous broadening as well is proposed     

Threshold voltage models of short,narrow and small geometry MOSFET's: A review

As MOS devices are shrunk to near and submicrometer dimensions, short channel, narrow width and small geometry effects cause variations in the threshold voltage. It is critical for circuit and device designers to be able to predict these variations. This paper reviews and compares the various modeling techniques developed to determine the threshold voltage as a function of device geometry. It is hoped this review will provide insights for the development of new models for today's small devices.     

Effect of diacetyl piquerol on H+-ATPase activity of microsomes fromIpomoea purpurea

The effect of an allelopathic compound, diacetyl-piquerol on the H⁺ -ATPase activity of the microsomal fraction from the radicles of a common weedIpomoea purpurea was studied. The diacetyl-piquerol inhibited the germination and radicle growth fromI. purpurea; the radicle growth was increasingly inhibited (10% to 100%) as piquerol concentrations were raised (10 M to 1000 M). The H⁺-ATPase activity was inhibited (48%) by 500 M diacetyl-piquerol, and this inhibition was higher in plasma membrane ATPase (67.2%) than in tonoplast membrane ATPase (31.4%). Additional studies of the precise physiological mechanisms of interference caused by allelopathic compounds are needed.This study was sponsored by Project PCECCCNA-050954 of Consejo Nacional de Ciencia y Tecnología (CONACyT).     

A Ti:Al2O3 master-oscillator/power-amplifiersystem

The authors have constructed a multistage Ti:Al₂O₃ master-oscillator/power-amplifier system which generates 115-ns, 0.38-J pulses at 800 nm. The system is tunable from 760 to 825 nm and has a repetition rate of 10 Hz. Measurements of the output pulse demonstrate near-diffraction-limited performance and a Fourier-transform-limited bandwidth of ~4 MHz     

Atherogenic effect of oxidized products of cholesterol

Cholesterol under certain in vitro and possibly in vivo conditions may be oxidized to oxysterols, which are suspected of being initiators of atherosclerotic plaques. Oxysterols inhibit HMG-CoA reductase activity resulting in a decreased cholesterol concentration in the cell membrane, which leads to endothelial membrane injury and probable premature cell death. Exogenous oxidation of cholesterol in human tissues under certain unusual conditions is highly probable. Dietary oxysterols are absorbed in the gastrointestinal tract and are selectively transported by the athrogenic lipoproteins LDL and VLDL. The oxysterols cholestanetriol and 25-OH cholesterol have been shown to be atherogenic. Oxysterols are commonly found in dried egg products, powdered milk, cheeses and in a variety of high temperature dried animal products.     

Lead‐Free Polycrystalline Ferroelectric Nanowires with Enhanced Curie Temperature

Ferroelectrics are important technological materials with wide‐ranging applications in electronics, communication, health, and energy. While lead‐based ferroelectrics have remained the predominant mainstay of industry for decades, environmentally friendly lead‐free alternatives are limited due to relatively low Curie temperatures (T _C) and/or high cost in many cases. Efforts have been made to enhance T _C through strain engineering, often involving energy‐intensive and expensive fabrication of thin epitaxial films on lattice‐mismatched substrates. Here, a relatively simple and scalable sol–gel synthesis route to fabricate polycrystalline (Ba_0.85Ca_0.15)(Zr_0.1Ti_0.9)O₃ nanowires within porous templates is presented, with an observed enhancement of T _C up to ≈300 °C as compared to ≈90 °C in the bulk. By combining experiments and theoretical calculations, this effect is attributed to the volume reduction in the template‐grown nanowires that modifies the balance between different structural instabilities. The results offer a cost‐effective solution‐based approach for strain‐tuning in a promising lead‐free ferroelectric system, thus widening their current applicability.     

Measurement of mobility in HEMT devices using high-order derivatives

In this paper, a novel approach to the measurement of mobility of GaAs HEMT devices is presented. The new approach employs high-order derivatives as a means of determining the parameters of the proposed new mobility equation. The new approach is compared to established mobility measurement methods, and shown to offer better accuracy. The results presented also consider the behavior of mobility in the linear and saturation bias regions. The mobility value extracted by this new method has permitted improvements to the MESFET/HEMT model when simulating the behavior of the device in the linear region. This is critical in many applications, such as in low current linear-mixing applications.     

Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating

This paper presents a method to deposit titanium oxide (TiOx) films from a sol containing IV titanium isopropoxide Ti[OCH(CH₃)₂]₄, 2-methoxyethanol, CH₃OCH₂CH₂OH and ethanolamine H₂NCH₂CH₂OH, in order to obtain layers with thickness above 220 nm with the required characteristics to be used in Metal–Insulator–Semiconductor, MIS, structures and polymeric thin film transistors, PTFTs. The effect of using different component ratios is described. The dielectric constant was in the order of 12, the critical electric field was 5 × 10⁵ V/cm and the density of states at the interface was less than 1 × 10¹¹ cm⁻². The analysis of MIS structures prepared with these TiOx layers shows that they are suitable for using in PTFTs. The fabrication of independent bottom gate PTFTs with poly(3-hexylthiophene), P3HT, on top of the TiOx layer is described, obtaining a major reduction in the operation voltage range from −30 V to −4 V, while maintaining the typical mobility for P3HT PTFTs.