High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSMphotodetector

The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained     

Approximate methods of identifying dynamic systems

Translated from Izmeritel'naya Tekhnika, No. 7, pp. 8–9, July, 1992.     

Features of penetrating obstacles made of combined materials with strikers of different shape

Results of ballistic tests for obstacles made of combined materials in relation to striker shape are presented in the form of penetration curves. It is established that striker shape affects not only quantitative indices, but also the qualitative nature of these curves.Translated from Problemy Prochnosti, No. 1, pp. 60–62, January, 1992.     

Enhancement of heat and mass transfer in a plane channel with turbulizers on one of the walls

The effect of turbulizing asperities positioned on one of the walls of a plane channel on the intensity of exchange processes near a smooth wall with injection of different working media is studied experimentally. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 3, pp. 404–408, 1997.     

Calculation of the acoustical characteristics of gas transport equipment of the unit type in the design stage

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 11, pp. 28–30, November, 1993.