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21.
Hook T.B. Brown J. Cottrell P. Adler E. Hoyniak D. Johnson J. Mann R. 《Electron Devices, IEEE Transactions on》2003,50(9):1946-1951
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon. 相似文献
22.
Piedade M. Sousa L. A. de Almeida T. M. Germano J. da Costa B. A. Lemos J. M. Freitas P. P. Ferreira H. A. Cardoso F. A. 《IEEE transactions on circuits and systems. I, Regular papers》2006,53(11):2384-2395
This paper presents a hand-held microsystem based on new fully integrated magnetoresistive biochips for biomolecular recognition (DNA hybridization, antibody antigen interaction, etc.). Magnetoresistive chip surfaces are chemically treated, enabling the immobilization of probe biomolecules such as DNA or antibodies. Fluid handling is also integrated in the biochip. The proposed microsystem not only integrates the biochip, which is an array of 16times16 magnetoresistive sensors, but it also provides all the electronic circuitry for addressing and reading out each transducer. The proposed architecture and circuits were specifically designed for achieving a compact, programmable and portable microsystem. The microsystem also integrates a hand-held analyzer connected through a wireless channel. A prototype of the system was already developed and detection of magnetic nanoparticles was obtained. This indicates that the system may be used for magnetic label based bioassays 相似文献
23.
The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears. 相似文献
24.
This letter presents a new polarizer which has a simple comb structure inside a circular waveguide. The electrical performance of the proposed comb polarizer is optimized by a circular waveguide radius and by the physical parameters of the comb plates. This polarizer is suitable for providing good performance in millimeter‐band application because of its simple structure and low fabrication cost. In our experiments the dual‐band comb polarizer designed in band 1(K) and band 2(Ka) showed good electrical performance without any tuning elements. 相似文献
25.
26.
Quasi-static stress fields for a crack inclined to the property gradation in functionally graded materials 总被引:3,自引:0,他引:3
Summary. Quasi-static stress fields for a crack inclined to the direction of property gradation in functionally graded materials (FGMs)
are obtained through an asymptotic analysis coupled with Westergaard's stress function approach. The elastic modulus of the
FGM is assumed to vary exponentially along the gradation direction. The mode mixity due to the inclination of the property
gradient is accommodated in the analysis through superposition of opening and shear modes. The first four terms in the expansion
of the stress field are derived to explicitly bring out the influence of nonhomogeneity on the structure of the stress field.
Using these stress field contours of constant maximum shear stress, constant maximum principal stress, constant first stress
invariant and constant out of plane displacement are generated, and the effect of inclination of the property gradation direction
on these contours is discussed.
Received September 22, 2002
Published online: May 20, 2003
The financial support of National Science Foundation (NSF) under grant no. CMS 99000138 is gratefully acknowledged. 相似文献
27.
28.
V. N. Tsygankov V. V. Safonov A. I. Kozlov V. P. Gavrilov 《Inorganic Materials》2003,39(10):1076-1078
The GeO2–NiO system is studied in the stability range of Ni2GeO4 by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined. 相似文献
29.
The catalytic activities of alumina prepared from an Al alkoxide-amine adduct monomer for the reaction of cyclopentene oxide with piperidine was determined after various pretreatments, including calcination and exposure to moisture. They were compared with the activity of alumina prepared by the conventional hydrolysis method. It was found that the as-prepared sample from the alkoxide-amine monomer preparation was five times more active than a conventional preparation, suggesting that it has a higher density of surface Lewis acid sites. However, its activity was much more severely suppressed by exposure to moisture. 相似文献
30.