Cluster analysis in industrial market segmentation through artificial neural network

Market segmentation has commonly applied cluster analysis. This study intends to make the comparison of conventional two-stage method with proposed two-stage method through the simulated data. The proposed two-stage method is the combination of self-organizing feature maps and K-means method. The simulation results show that the proposed scheme is better than the conventional two-stage method based on the rate of misclassification.     

A Refinement Calculus for Shared-Variable Parallel and Distributed Programming

Parallel computers have not yet had the expected impact on mainstream computing. Parallelism adds a level of complexity to the programming task that makes it very error-prone. Moreover, a large variety of very different parallel architectures exists. Porting an implementation from one machine to another may require substantial changes. This paper addresses some of these problems by developing a formal basis for the design of parallel programs in the form of a refinement calculus. The calculus allows the stepwise formal derivation of an abstract, low-level implementation from a trusted, high-level specification. The calculus thus helps structuring and documenting the development process. Portability is increased, because the introduction of a machine-dependent feature can be located in the refinement tree. Development efforts above this point in the tree are independent of that feature and are thus reusable. Moreover, the discovery of new, possibly more efficient solutions is facilitated. Last but not least, programs are correct by construction, which obviates the need for difficult debugging. Our programming/specification notation supports fair parallelism, shared-variable and message-passing concurrency, local variables and channels. The calculus rests on a compositional trace semantics that treats shared-variable and message-passing concurrency uniformly. The refinement relation combines a context-sensitive notion of trace inclusion and assumption-commitment reasoning to achieve compositionality. The calculus straddles both concurrency paradigms, that is, a shared-variable program can be refined into a distributed, message-passing program and vice versa. Received July 2001 / Accepted in revised form May 2002     

Creating and Justifying Research and Development Value: Scope,Scale, Skill and Social Networking of R&D

In this paper we describe a framework for analysing the creation and justification of Research & Development. The 4S framework is developed for analysing the scope, scale, skills and social network aspects of Research & Development value. The framework is based on social system theory, a process contingency model, and recent Research & Development metrics. We present a first empirical assessment based on a workshop using the 4S framework for leveraging Research & Development. Results that assist in the assessment of value creation utilising R & D within networks are very relevant in high tech industries. The multi–dimensional process approach of this framework seems promising for understanding and managing R&D value creation, but needs further operationalisation. Case studies are described and a Dutch network on leveraging R&D has been initiated.     

西北地区节水灌溉市场与技术需求

西部开发需要大量的生态用水，从节水灌溉设备市场分析，节水灌溉专用泵阀、新型输水管材、高效低能喷微灌设备及材料的需求量很大，技术需求与亟待研究开发的关键技术和设备也很多。从西北地区水资源状况与需求看，节水灌溉市场有很大潜力。     

Random sequence multisets for synchronous code-divisionmultiple-access channels

The effect of using randomly selected sequence multisets for the uplink of a synchronous code-division multiple-access channel is considered. A tight lower bound on the expected value of the sum capacity over the ensemble of randomly selected sequence multisets is given. For large systems, the sum rate penalty for using randomly selected multisets is shown to be at most 1 nat and to vanish as the number of users becomes large, compared to the sequence length     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range     

Mathematical analysis of dynamic channel selection in indoor mobilewireless communication systems

Dynamic channel selection (DCS) is an algorithm for flexible resource sharing in mobile radio systems. The digital enhanced cordless telecommunications (DECT) standard implements a version of DCS based on time as well as frequency multiplexing. In this paper, mathematical models are developed to evaluate the probabilities of channel availability, desired carrier power, and the carrier-to-interference ratio (CIR) for a constant traffic load. These results can be used to compute the call setup blocking probability. The models reported in this study are based on a decentralized DCS according to the DECT standard specifications. The results show that blocking due to availability of a channel (resource blocking), not interference blocking, generally is the most important factor in overall call blocking. Furthermore, it is seen that resource blocking is sensitive to the implementation of portable sets. Also, with homogeneous static traffic, this type of DCS ran be as good as fixed channel allocation (FCA) with respect to resource blocking     

Two-dimensional singular vector elements for finite-elementanalysis

The finite-element method (FEM) exhibits a reduced convergence rate when used for the analysis of geometries containing sharp edges where the electromagnetic field is singular. The convergence of the method can be-improved by introducing singular elements that model analytically predicted singular behavior. A number of authors have developed singular elements that are compatible with the scalar FEM. In this paper, we propose a new singular element that is compatible with edge-based vector finite elements and can cope with any order of singularity while preserving the sparsity of the FEM equations. Edge-based singular elements more correctly model singular fields and thus require fewer unknowns, while avoiding the introduction of spurious modes in the numerical solution. Numerical results verify that the convergence of the FEM is significantly improved     

Quasi-saturation capacitance behavior of a DMOS device

This paper reports a simulation study on the capacitance characteristics of a double-diffused metal-oxide semiconductor (DMOS) device operating in the quasi-saturation region. From the analysis, the capacitance effect of the gate oxide upon the drift region cannot be modeled as an overlap capacitance, because the drain-gate/source-gate capacitances of the DMOS device may exceed the gate-oxide capacitance due to the larger voltage drop over the gate oxide than the change in the imposed gate bias when entering the quasi-saturation region. This effect can be the explanation for the plateau behavior in the gate charge plot during turn-on and turn-off of the DMOS device. Based on the small-signal equivalent capacitance model, the accumulated charge in the drift region below the gate oxide may thoroughly associate with the drain terminal in the prequasi-saturation region and with the source terminal in the quasi-saturation region