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71.
Cheng-En Lue I-Shun Wang Chi-Hsien Huang Yu-Ting Shiao Hau-Cheng Wang Chia-Ming Yang Shu-Hao Hsu Ching-Yu Chang William Wang Chao-Sung Lai 《Microelectronics Reliability》2012,52(8):1651-1654
In this work, indium tin oxide (ITO) layers were deposited by radio frequency sputtering using a roll-to-roll process on flexible polyethylene terephthalate substrates as pH-sensing electrodes of extended gate field effect transistors (EGFETs). When the pH sensitivity of EGFETs for ITO layers with different sheet resistances was compared, a higher sensitivity was found for samples with a lower sheet resistance (100 Ω/□), and a reliability evaluation was carried out for this condition. The average sensitivity was 50.1 mV/pH, as measured from pH 2 to pH 12. Over three additional runs, the standard variation of the average sensitivity was found to be ±1.7 mV/pH. The tolerance to light is high; the samples were measured in dark and light conditions, and a difference of only 0.6 mV was observed. The temperatures available for measurement are 25–40 °C. Up to this point, the behavior of samples stored in dry conditions has been found to persist for more than 55 days. 相似文献
72.
Yi-Hsuan Hsiao Hang-Ting Lue Yen-Hao Shih Erh-Kun Lai Kuang-Yeu Hsieh Liu R. Chih-Yuan Lu 《Device and Materials Reliability, IEEE Transactions on》2008,8(2):344-351
Several novel negative Fowler-Nordheim (FN) operations for hot-hole-erased SONOS-type devices are studied. By using p+-poly gate instead of n+-poly gate, gate injection is greatly suppressed, and the device shows self-convergent VT after -FN. By using this self-converging property, -FN operation can be applied to both erased and programmed states in various sequences/algorithms. In the erase state, a short -FN channel erase called "soft erase" can be performed after hot-hole sector erase. It provides a strong electrical annealing effect to recover the hot-hole damages. On the other hand, "refill" is a shorter version of the soft erase method that expels shallow-level electrons and replaces them with deeper level ones. A spectrum blue shift model is proposed to explain the shifting of the trapped-electron energy distribution to a bluer (deeper) spectrum during refill. Various soft erase and refill conditions are examined to study the charge loss mechanism. The experimental results exhibit superior retention by combining the suitable soft erase and refill conditions. We find that the vertical charge losses measured by VG -accelerated retention test at room temperature (25 degC) are highly correlated to that measured at high temperature baking (150 degC), and a reliability model is proposed to explain these mechanisms. 相似文献
73.
基于Web的CRM应用系统技术支持平台研究 总被引:3,自引:0,他引:3
在对信息时代企业CRM应用系统的实际需求分析的基础上,提出了一种基于Web的CRM应用系统技术支持平台解决方案,对系统平台架构、功能平台、开发平台设计及平台整合技术进行了探讨,可为企业构建CRM应用系统提供借鉴。 相似文献
74.
Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory 总被引:2,自引:0,他引:2
Lue HT Wu CJ Tseng TY 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》2003,50(1):5-14
An improved theoretical analysis on the electrical characteristics of ferroelectric memory field-effect transistor (FeMFET) is given. First, we propose a new analytical expression for the polarization versus electric field (P-E) for the ferroelectric material. It is determined by one parameter and explicitly includes both the saturated and nonsaturated hysteresis loops. Using this expression, we then examine the operational properties for two practical devices such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) as well. A double integral also has been used, in order to include the possible effects due to the nonuniform field and charge distribution along the channel of the device, to calculate the drain current of FeMFET. By using the relevant material parameters close to the (Bi, La)/sub 4/Ti/sub 3/O/sub 12/ (BIT) system, accurate analyses on the capacitors and FeMFET's at various applied biases are made. We also address the issues of depolarization field and retention time about such a device. 相似文献
75.
基于网络的物资招标采购系统的开发与应用 总被引:3,自引:0,他引:3
以某大型机械制造企业的招标采购管理为背景 ,介绍了基于网络的物资招标采购系统的系统构架、系统功能、开发模式以及系统特点。该系统实现了物资招标采购活动的电子化过程控制 ,加强了供应链上各企业间的信息传递 ,为企业物资招标系统的开发提供了可借鉴的经验 相似文献
76.
采用调查访问法、文献资料法等,对重庆市竞技体育的发展状况、有利条件与制约因素进行了分析研究,探讨了实现重庆市竞技体育发展的战略途径与对策,针对重庆市竞技体育的管理体制、竞技体育人才、资金投入、体育设施等方面存在的问题提出了具体的改进措施。 相似文献
77.
基质组成对xSrO·yAl2O3:Eu^2+,Dy^3+发光性能的影响 总被引:1,自引:0,他引:1
研究了基质组成对xSrO·yAl2O3:Eu^2+,Dy^3+体系长余辉发光性能的影响,并对其影响机理进行了探讨。XRD分析和长余辉发光性能表明:改变Al2O3/SrO比率可以获得长余辉发光性能较好的3种基质相:SrAl2O4:Eu^2+,Dy^3+和Sr4Al14O25:Eu^2+,Dy^3+及SrAl4O7:Eu^2+,Dy^3+。激发与发射光谱性能分析和余辉衰减特性分析结果表明:随着基质中Sr/Al比例的减小,激发光谱向短波方向延伸,发射峰蓝移,初始余辉亮度越高,余辉持续时间越长。热释光谱分析表明:贫锶相晶格中的陷阱深度与密度较大,因而显示出较好的长余辉发光性能。 相似文献
78.
Lin Wang Li Han Wanlong Guo Libo Zhang Chenyu Yao Zhiqingzi Chen Yulu Chen Cheng Guo Kaixuan Zhang Chia-Nung Kuo Chin Shan Lue Antonio Politano Huaizhong Xing Mengjie Jiang Xianbin Yu Xiaoshuang Chen Wei Lu 《光:科学与应用(英文版)》2022,(3):396-405
Despite the considerable effort, fast and highly sensitive photodetection is not widely available at the low-photon-energy range (~meV) of the electromagnetic s... 相似文献
79.
从现代性角度研究当代俄罗斯建筑创作,分析以全球化为主导的"现代性"渗透到建筑创作的层面所表现出的同质化的趋向。以波罗的海明珠项目为例阐释在现代语境下当代俄罗斯建筑创作在地域性表达、可持续创作以及个性化创作方面的趋同表现。 相似文献
80.