Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

A practical approach for statistical matching of output queueing

We study a practical approach to match the performance of an output-queued switch statistically. For this purpose, we propose a novel switching architecture called a multiple input/output-queued (MIOQ) switch that requires no speedup for providing sufficient switching bandwidth. To operate an MIOQ switch in a practical manner, we also propose a multitoken-based arbiter which schedules the switch at a high operation rate and a virtual first-in first-out queueing scheme which guarantees the departure order of cells belonging to the same traffic flow at output. Additionally, we show that the proposed switch can naturally provide asymmetric bandwidth for inputs and outputs, which may be important in dealing with the links with different bandwidth demands. Finally, we compare the performance of an MIOQ switch with that of an output-queued switch and discuss the design criteria to match the performance of an output-queued switch.     

Mechanism of simultaneous solutes separation and concentration by size exclusion cyclic separation

The semicontinuous separation/concentration of two solutes with different molecular size by the size exclusion cyclic separation method is based on the opposite swelling responses of two gels to a temperature change. Experimental results of separation and concentration of solutes are verified qualitatively by the theoretical models based on the local equilibrium assumption. Separation of two solutes is shown by the breakthrough curves in coupled gel columns. In closed coupled columns, the volumetric space for the large molecules which are totally excluded from the gels becomes smaller, creating a concentrating effect as the gels swell when temperature changes. A mechanistic model is suggested to predict the large molecule concentration to increase to its solubility limit as cycle repeats.     

Beam test of the CsI(Tl) calorimeter for the BELLE detector at the KEK-B factory

We studied the performance of a prototype electromagnetic calorimeter for the BELLE detector at the KEK proton synchrotron for an energy range of 0.25–3.5 GeV. The prototype consisted of an array of 6 × 5 CsI(Tl) crystals with 30 cm length (16.2 radiation lengths) and about 6 cm × 6 cm cross section. The scintillation light of each CsI(Tl) crystal was read out by two large-area PIN photodiodes and charge-sensitive preamplifiers attached at the rear face of the crystal. We measured the energy and position resolution for electrons and the e/π separation for two sets of matrix configurations: one corresponded to the center and the other to the edge of the barrel calorimeter. The overall performance measured by the test proves that the prototype calorimeter is satisfactory for the use in the BELLE detector.     

Performance evaluation of the Golay code pulse compression technique

The Center for NDE, Iowa State University, has developed a laboratory prototype Golay code pulse compression system and tested it on a variety of materials. The performance of the system was evaluated in terms of signal-to-noise ratio enhancement (SNRE), resolution, and computation speed. The system's error sources also were discussed. The Golay code pulse compression was simulated on a computer and demonstrated the effective noise suppression. In addition, an equivalent pulse of the Golay code (delta-like pulse) was derived theoretically using a simple ultrasonic inspection model, which demonstrated its equivalence on the output correlated signal. Overall, the pulse compression technique extended the detection range for a given peak power and considerably reduced the system'swhite noise, hence providing enhanced signal-to-noise ratios (SNRs). An average of 30 dB improvement in SNR was obtained from highly energy-absorbent materials such as rubber, plastics, corks (insulation materials), and thick composites using the Golay codes of up to 512 bits. However, the technique did not effectively reduce coherent scattering noises from the coarse grain boundaries in cast stainless steels, Inconel weld metal, and material lay-ups in thin composites. Furthermore, it was found that, depending upon the system's hardware capabilities, the overall performance could be degraded considerably.     

Enhancement mode InP MISFET's with sulfide passivation andphoto-CVD grown P3N5 gate insulators

High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P₃N₅ film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10⁴ seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm ²/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×10¹⁴/cm² eV has been attained     

Ultra-wideband (from DC to 110 GHz) CPW to CPS transition

A new ultra-wideband, low-loss and small-size coplanar waveguide (CPW) to coplanar strip (CPS) transition which can be used from DC to 110 GHz is presented. The proposed transition connects CPW with CPS by the reformed air-bridge. Two ground planes of CPW are tied at their ends by a line and the centre of the line is connected to the ground strip of CPS by another line. Owing to the symmetry of the proposed structure, the currents of two ground planes of CPW are combined with the same phase and transferred to the ground strip of CPS. With height of 3 μm, the signal line of CPW passes over two connecting lines and is connected to the signal strip of CPS. For the back-to-back transition structure, insertion loss <1 dB and return loss >15 dB are obtained from 0.5 to 110 GHz     

Preparation of core–shell type nanoparticles of diblock copolymers of poly(L‐lactide)/poly(ethylene glycol) and their characterization in vitro

Core–shell type nanoparticles of poly(L ‐lactide)/poly(ethylene glycol) (LE) diblock copolymer were prepared by a dialysis technique. Their size was confirmed as 40–70 nm using photon correlation spectroscopy. The ¹H‐NMR analysis confirmed the formation of core–shell type nanoparticles and drug loading. The particle size, drug loading, and drug release rate of the LE nanoparticles were slightly changed by the initial solvents that were used. The drug release behavior of LE core–shell type nanoparticles showed an initial burst during the first 12 h and then a sustained release until 100 h. The degradation behavior of LE block copolymer nanoparticles was divided into three phases: the initial rapid degradation phase, the stationary phase, and the rapid degradation phase until complete degradation. It was suggested that lidocaine release kinetics were predominantly governed by the diffusion mechanism in the initial burst phase and after that by both of the diffusion and degradation mechanisms. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 2625–2634, 2002     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.