The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

The use of doped polyaniline as an electrode in the galvanic anodic protection of ferrous metals in industrial acid solutions

In order to investigate the galvanic anodic protection (GAP) of ferrous metals (such as 410, 304 and 316 stainless steels) in acid solutions by doped polyaniline (PANi), separate doped PANi powder-pressed electrodes with different surface areas (the area ratio of the PANi electrode to stainless steel is between 1:1 and 1:2) have been prepared. These were coupled with ferrous metal in the following solutions: 5 M sulphuric acid, 5 M phosphoric acid and industrial phosphoric acid (containing 5 M phosphoric acid and 0.05% chloride ion) to construct a galvanic cell, in which PANi is cathode while ferrous metal is anode. The results indicate that a PANi electrode with sufficient area can provide corrosion protection to stainless steel in these acidic solutions. A pilot scale coupling experiment was carried out. The results indicate that PANi is a promising material as an electrode for the anodic protection of ferrous metals in acidic solutions in industrial situations.