A Copper/Polyimide Fabrication Process for Fabricating High-Inductance Microinductor

This paper reports on a technological process that combines copper as conductor, permalloy as magnetic core material, and polyimide as insulation material to complete a microinductor on glass with high inductance. The shape of the magnetic core scheme was rectangular, of which the width of the long side and short side were 1.4 and 0.6 mm, respectively. The dimensions of the inductor are 3.86 mm times 3.94 mm times 90 mum with coil width of 20 mum and space of 35 mum. The results show that the maximum inductance is 4 muH at 1 MHz, and the maximum quality factor (Q-factor) is 1.5 at 2 MHz.     

Low-Loss Polymer-Based Long-Range Surface Plasmon-Polariton Waveguide

To improve the propagation loss of polymer-based long-range surface-plasmon-polariton (LR-SPP) waveguide devices at the telecom wavelength range, low-loss LR-SPP waveguides were fabricated in an ultraviolet-curable acrylate polymer with a low refractive index and absorption loss. A propagation loss of 1.72 dB/cm at a wavelength of 1.55 mum was achieved with a 14-nm-thick and 3-mum-wide metal stripe.     

Broadly wavelength-tunable external cavity lasers with extremely low power variation over tuning range

Tunable external-cavity lasers with low power variation over a broad tuning range are demonstrated using asymmetric multiple quantum-wells with a wide and flat gain. For a 2.8-/spl mu/m-wide ridge waveguide laser of cavity length 380 /spl mu/m, when used in a grating external cavity and with an antireflection coating on one facet of laser diode chip, the power variation of less than -1 dB is obtained over a range of 80 nm. This extremely low power variation is a direct result of the spectrally flat gain.     

A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-/spl mu/m CMOS technology has a size of 3.3/spl times/3.2 mm/sup 2/, including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4/spl deg/ and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.     

A weakness in the Bresson-Chevassut-Essiari-Pointcheval's Group Key Agreement scheme for low-power mobile devices

In this letter, we show that Bresson-Chevassut-Essiari-Pointcheval's Group Key Agreement scheme does not meet the main security properties: implicit key authentication, forward secrecy and known key security. Also, we propose an improved version, which fixes the security flaws, found in the scheme.     

SET/CMOS hybrid process and multiband filtering circuits

We have developed an integration technology for the single electron transistor (SET)/CMOS hybrid systems. SET and CMOS transistors can be optimized without any possible degradation due to mixing dissimilar devices by adopting just one extra mask step for the separate gate oxidation (SGOX). We have confirmed that discrete devices show ideal characteristics required for the SET/CMOS hybrid systems. An SET shows obvious Coulomb oscillations with a 200-mV period and CMOS transistors show high voltage gain. Based on the hybrid process, new hybrid circuits, called periodic multiband filters, are proposed and successfully implemented. The new filter is designed to perform a filtering operation according to the periodic multiple blocking bands of which a period is originated from the SET. Such a novel function was implemented efficiently with a few transistors by making full use of the periodic nature of SET characteristics.     

Reverse short channel effects in high-k gated nMOSFETs

Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO₂ on SiON buffer, Al₂O₃ on SiON buffer) gated submicron nMOSFETs, while the SiO₂ or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role.     

Visual Cryptography Based on an Interferometric Encryption Technique

This paper presents a new method for a visual cryptography scheme that uses phase masks and an interferometer. To encrypt a binary image, we divided it into an arbitrary number of slides and encrypted them using an XOR process with a random key or keys. The phase mask for each encrypted image was fabricated under the proposed phase‐assignment rule. For decryption, phase masks were placed on any path of the Mach‐Zehnder interferometer. Through optical experiments, we confirmed that a secret binary image that was sliced could be recovered by the proposed method.     

Enhancement in Organic Photovoltaic Efficiency through the Synergistic Interplay of Molecular Donor Hydrogen Bonding and π‐Stacking

For organic photovoltaic (OPV) cells based on the bulk heterojunction (BHJ) structure, it remains challenging to rationally control the degree of phase separation and percolation within blends of donors and acceptors to secure optimal charge separation and transport. Reported is a bottom‐up, supramolecular approach to BHJ OPVs wherein tailored hydrogen bonding (H‐bonding) interactions between π‐conjugated electron donor molecules encourage formation of vertically aligned donor π‐stacks while simultaneously suppressing lateral aggregation; the programmed arrangement facilitates fine mixing with fullerene acceptors and efficient charge transport. The approach is illustrated using conventional linear or branched quaterthiophene donor chromophores outfitted with terminal functional groups that are either capable or incapable of self‐complementary H‐bonding. When applied to OPVs, the H‐bond capable donors yield a twofold enhancement in power conversion efficiency relative to the comparator systems, with a maximum external quantum efficiency of 64%. H‐bond promoted assembly results in redshifted absorption (in neat films and donor:C₆₀ blends) and enhanced charge collection efficiency despite disparate donor chromophore structure. Both features positively impact photocurrent and fill factor in OPV devices. Film structural characterization by atomic force microscopy, transmission electron microscopy, and grazing incidence wide angle X‐ray scattering reveals a synergistic interplay of lateral H‐bonding interactions and vertical π‐stacking for directing the favorable morphology of the BHJ.     

Fabrication of Fischer–Tropsch Catalysts by Deposition of Iron Nanocrystals on Carbon Nanotubes

The fabrication of supported catalysts consisting of colloidal iron oxide nanocrystals with tunable size, geometry, and loading—homogeneously dispersed on carbon nanotube (CNT) supports—is described herein. The catalyst synthesis is performed in a two‐step approach. First, colloidal iron and iron oxide nanocrystals with a narrow size distribution are produced. Second, the nanocrystals are attached to CNT grains serving as support structure. Important features, like iron loading and nanocrystal density on the CNT support, are controlled by changing the nanocrystal concentration and ligand concentration, respectively. The Fischer–Tropsch performance reveals these new materials to be active, selective toward lower olefins (60% C of hydrocarbons produced in the absence of promoters), and remarkably stable against particle growth.