Interdiffusion in the Fe-Pt System

Diffusion-couple experiments are conducted in the Fe-Pt system. The phase boundary compositions of the phases measured in this study are found to be different than the compositions published previously. In the γ-FePt solid solution, the interdiffusion coefficient increases with the Pt content up to 25 at. pct Pt. Fe is the faster diffusing species in this phase. The trend in the interdiffusion coefficient is explained with the help of calculated driving force for diffusion. To reduce errors, the average interdiffusion coefficients are calculated in the FePt and FePt₃ compounds.     

Some aspects of deformation behavior

The deformation behavior of several single- and two-phase coarse microstructures has been examined using microhardness measurements. It has been found that the strength response of a coarse phase in isolation is distinctly different from its response when it exists in a two-phase system. The second phase alters the mechanical state of the first one andvice versa even in the plastically undeformed condition. This phenomenon is explained in terms of the existence of an appreciable amount of residual stresses in two-phase coarse microstructures. These stresses primarily arise due to the difference in thermal expansion coefficients of the phases. The in- fluence of elastic stress field on microhardness response is shown with a new type of experiment to support the proposed explanation. The present results question the existing expressions for deformation modeling of multiphase materials because of the uncertainties in the estimation of the average strength of the phases in a two-phase system.     

Studies on the overall safety aspects during irradiation of TeO2 in the central thimble of the TRIGA research reactor

The purpose of this study is to provide a detailed safety analysis of overall system and components in terms of their ability to provide optimum output from the irradiation of TeO₂ in the central thimble of the 3 MW TRIGA MARK II research reactor at Atomic Energy Research Establishment (AERE), Savar, Dhaka, Bangladesh. It identifies safety issues relevant to ¹³¹I radioisotope production and ensures that safety analysis and design are consistent. It evaluates threats developed within the facility during the irradiation process and ultimately ensures establishment of in-core safety limits and conditions at all stages of ¹³¹I production. In-core irradiation safety not only ensures the safe operation of the reactor but also strengthens the production of radioisotopes (RI). This study attempts to review and modify all safety related events and aspects relating to RI production. The three-dimensional continuous energy Monte Carlo code MCNP is used to develop a versatile and accurate full-core model of the TRIGA core. The cross-section library and fission product inventory are generated by using NJOY and ORIGEN computer codes. The methodology to evaluate heat generation and other relevant parameters necessary to provide enough information for thermal hydraulic analysis are discussed. The neutron flux distribution inside the dry and water filled central thimble is determined in order to locate the highest neutron flux trapping position. The thermal hydraulic and safety analysis are performed by elaborate numerical analysis as well as by using GENGTC computer code. A mock-up facility has also been developed to supplement and verify the theoretically predicted results. The total energy generated during irradiation of 50 gm TeO₂ sample in dry condition is found to be 113.84 w of which 75% energy is due to neutron heating and rest of the amount is from gamma heating. Around 11.28 w of heat energy is also generated in the quartz vial. When the total generated-heat transfer is considered through conduction and radiation mechanisms, the calculated temperature of 50 g of TeO₂ reaches at 970 °C. Considering simultaneous heat transfer mechanisms, (conduction, radiation and convection) the calculated maximum temperature of the 50 g of TeO₂ powder comes down at 680 °C. It may be pointed out that very high amount of heat is generated during the irradiation of TeO₂ at 3 MW reactor power in dry condition which is nearly the melting point of TeO₂ and may be termed as unsafe mode of irradiation.     

Computational analysis of neutronic parameters for TRIGA Mark-II research reactor using evaluated nuclear data libraries

The aim of this study is to analyze the neutronic parameters of TRIGA Mark-II research reactor using the chain of NJOY-WIMS-CITATION computer codes based on evaluated nuclear data libraries CENDL-2.2 and JEFF-3.1.1. The nuclear data processing code NJOY99.0 has been employed to generate the 69 group WIMS library for the isotopes of TRIGA core. The cell code WIMSD-5B was used to generate the cross sections in CITATION format and then 3-dimensional diffusion code CITTATION was used to calculate the neutronic parameters of the TRIGA Mark-II research reactor. All the analyses were performed using the 7-group macroscopic cross section library. The CITATION test-runs using different cross section sets based on different models applied in WIMS calculations have shown a strong influence of those models on the final integral parameters. Some of the cells were specially treated with PRIZE options available in WIMSD-5B to take into account the fine structure of the flux gradient in the fuel-reflector interface region. It was observed that two basic parameters, the effective multiplication factor, k_eff and the thermal neutron flux, were in good agreement among the calculated results with each other as well as the measured values. The maximum power densities at the hot spot were 1.0446E02 W/cc and 1.0426E02 W/cc for the libraries CENDL-2.2 and JEFF-3.1.1 respectively. The calculated total peaking factors 5.793 and 5.745 were compared to the original SAR value of 5.6325 as well as MCNP result. Consequently, this analysis will be helpful to enhance the neutronic calculations and also be used for the further thermal–hydraulics study of the TRIGA core.     

Microstructure and growth of ZnTe films

The microstructure and growth of ZnTe films deposited onto glass and freshly cleaved NaCl substrates are carefully studied by a TEM. Effect of different stimulator on the grain growth is also described.     

Multicast Network Security with Asymmetric Cooperative Relaying

International Journal of Wireless Information Networks - This paper exhibits the confidentiality performance study of a cooperative multicast network consisting of $${\mathcal {K}}$$ asymmetric...     

Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions

We present a method to determine the average device channel temperature of AlGaN/GaN metal–oxide–semiconductor heterostructure field effect transistors (MOSHFETs) in the time domain under continuous wave (CW) and periodic-pulsed RF (radiation frequency) operational conditions. The temporal profiles of microwave output power densities of GaN MOSHFETs were measured at 2 GHz under such conditions and used for determination of the average channel temperature. The measurement technique in this work is also being utilized to determine the thermal time constant of the devices. Analytical temporal solutions of temperature profile in MOSHFETs are provided to support the method. The analytical solutions can also apply to generic field effect transistors (FETs) with an arbitrary form of time-dependent heat input at the top surface of the wafer. It is found that the average channel temperature of GaN MOSHFETs on a 300 μm sapphire substrate with the output power of 10 W/mm can be over 400 °C in the CW mode while the average channel temperature of GaN MOSHFETs on a SiC substrate with the same thickness only reaches 50 °C under the same condition. The highest average channel temperature in a pulsed RF mode will vary with respect to the duty cycle of the pulse and type of the substrate.     

Design and performance analysis of a nanoscaled inverter based on wrap-aroundgate nanowire MOSFETs

The design and analysis of a silicon nanowire inverter with a wrap-around-gate nMOS is presented and its performance is compared with that of a conventional inverter. The analysis shows that the nano-channel structure design can improve carrier mobility by suppressing the transverse component of the electric field. This results in an enhancement in the current drive of the nMOS, and contributes to lowering power consumption and the switching delay. Simulated power consumption and rise time of the proposed design was found to be about 20 μW and 0.5 ns, respectively, compared with 2.5 mW and 1.5 ns achievable with conventional planar MOSFETs. Investigation of the gate length shows that a nMOS with shorter gates have an improved switching response compared with long channel devices.     

Effect of microwave preheating on the bonding performance of flip chip on flex joint

A microwave (MW) preheating mechanism of anisotropic conductive adhesive film (ACF) has been introduced in order to reduce the bonding temperature for flip chip technology. Thermal curing of epoxy shows a very sluggish and non-uniform curing kinetics at the beginning of the curing reaction, but the rate increases with time and hence requires higher temperature. On the other hand MW radiation has the advantage of uniform heating rate during the cycle. In view of this, MW preheating (for 2/3 s) of ACF prior to final bonding has been applied to examine the electrical and mechanical performance of the bond. Low MW power has been used (80 and 240 W) to study the effect of the MW preheating. It has been found that 170 °C can be used for flip chip bonding instead of 180 °C (standard temperature for flip chip bonding) for MW preheating time and power used in this study. The contact resistance (0.015–0.025 Ω) is low in these samples where the standard resistance is 0.017 Ω (bonded at 180 °C without prior MW preheating). The shear forces at breakage were satisfactory (152–176 N) for the samples bonded at 170 °C with MW preheating, which is very close and even higher than the standard sample (173.3 N). For MW preheating time of 2 s, final bonding at 160 °C can also be used because of its low contact resistance (0.022–0.032 Ω), but the bond strength (137.3–145 N) is somewhat inferior to the standard one.     

Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors

We demonstrate a low-threshold AlInGaN/InGaN/GaN metal-oxide semiconductor double heterostructure field-effect transistor (MOS-DHFET) for high-frequency operation. A combination of an InGaN channel (for carrier confinement), a DRE process, and a new digital-oxide-deposition technique helped us to achieve MOS-DHFET devices with extremely low subthreshold leakage currents. This reduction in output conductance (short channel effect) resulted in a high cutoff gain frequency f_T of about 65 GHz and a current gain frequency f _max of 94 GHz. The devices exhibited high drain-currents of 1.3 A/mm and delivered RF powers of 3.1 W/mm at 26 GHz with a 35 V drain bias.