DuD Recht

DuD Recht

DuD Recht     

Hypothermic coagulopathy in trauma: effect of varying levels of hypothermia on enzyme speed, platelet function, and fibrinolytic activity

Comparative study of protein metabolism in neurons of layers III and V of the sensorimotor cortex was carried out in two groups of Wistar rats, which differed in learning results: "bad" (60% of population) and "good" learners (40%). It was found out that the associative neurons (layer III) were most sensitive to cognitive load. In "bad" learners, an increase in nuclear and cytoplasmic dimensions and rise in protein concentration and content took place in these neurons, while in the efferent neurons (layer V) the protein content increased only in the cytoplasm. In "good" learners, the cognitive load led to a decrease in all the cytochemical parameters in neurons of the layer III while in the neurons of the layer V the content and concentration of proteins increased both in nuclei and cytoplasm. It is suggested that the character of protein metabolism changes produced by information load can be considered as a reflection of individual peculiarities of cognitive activity, and the extent of cytochemical changes as a reflection of complicity of a cognitive task.     

Measurement of transient deformations with dual-pulse addition electronic speckle-pattern interferometry

We describe an electronic speckle-pattern interferometry system for analyzing addition fringes generated by the transient deformation of a test object. The system is based on a frequency-doubled twin Nd:YAG laser emitting dual pulses at a TV camera field rate (50 Hz). The main advance has been the automatic, quantitative analysis of dual-pulse addition electronic speckle-pattern interferometry data by the introduction of carrier fringes and the application of Fourier methods. The carrier fringes are introduced between dual pulses by a rotating mirror that tilts the reference beam. The resulting deformation-modulated addition fringes are enhanced with a deviation filter, giving fringe visibility close to that of subtraction fringes. The phase distribution is evaluated with a Fourier-transform method with bandpass filtering. From the wrapped phase distribution, a continuous phase map is reconstructed with an iterative weighted least-squares unwrapper. Preliminary results for a thin plate excited by an acoustic shock show the suitability of the system for the quantitative evaluation of transient deformation fields.     

Unwrapping of Digital Speckle-Pattern Interferometry Phase Maps by use of a Minimum L(0)-Norm Algorithm

The performance of a minimum L(0)-norm unwrapping algorithm is investigated by use of synthetic digital speckle-pattern interferometry (DSPI) wrapped phase maps that simulate experimentally obtained data. This algorithm estimates its own weights to mask inconsistent pixels. Particular features usually included in DSPI wrapped phase distributions, such as shears, speckle noise, fringe cuts, object physical limits, and superimposed phase maps, are analyzed. Some adequate approaches to solving these features are discussed. Finally, it is shown that a complex case in which shears and fringe cuts coexist in the wrapped phase cannot be solved satisfactorily with the minimum L(0)-norm algorithm by itself. To cope with this problem, we propose a new scheme.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Growth and characterization of GaSb bulk crystals with low acceptor concentration

GaSb bulk single crystals with low acceptor concentration were grown from a bismuth solution by the traveling heater method. The result is isoelectronic doping by Bi which gives a variation of the opto-electronic properties as a function of grown length as well as a pronounced microscopic segregation. Photoluminescence spectra at 4K show a decrease of the natural acceptor during growth, which is confirmed by Hall measurements. The electrical properties of this isoelectronic doped GaSb are hole concentrations and mobilities of N_A − N_D = 1.7 × 10¹⁶ cm⁻³ and μ = 870 cm²Vs at room temperature and N_A-N_D = 1 × 10¹⁶ cm⁻³ and μ = 4900 cm²/Vs at 77K, respectively. The lowest p-type carrier concentration measured at 300K is N_A − N_D = 3.3 × 10¹⁵ cm⁻³     

高铁摩擦片表面裂纹检测方法研究

摩擦片的裂纹数目和长度是衡量高铁制动性能的核心评定标准之一,有效的裂纹检测对高铁的安全运行具有重要意义.提出基于CSPDarkNet53主干网络架构的改进算法,实现摩擦片裂纹的在线自动检测.一方面融合双路特征提取网络以增强对于裂纹特征检测的敏感度,有效提高摩擦片裂纹检测的准确率;另一方面在YOLO检测模块预测框的去冗余...     

化学水浴沉积CdS薄膜晶相结构及性质

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜，研究了溶液组份的浓度对CdS结晶结构的影响．增加乙酸胺的浓度、提高溶液的pH值有利于生成立方晶CdS，反之则易于生成六方晶CdS．无论立方相还是六方相CdS薄膜，电阻率均在10~4～10~5Ω·cm范围，结晶均匀细致．用六方晶为主和立方晶为主的CdS制备的CIGS太阳电池最高效率分别达到12.10%和12.17%．     

Stress-induced effects by the anodic oxide in ridge waveguide laserdiodes

This paper studies, both theoretically and experimentally, stress-induced effects on the lateral far-field behavior for ridge-type semiconductor laser diodes where anodic oxide is used for the definition of the stripe width. These effects consist of antiguiding under the stripe region, and of two positive waveguiding features near the stripe edges. For low-threshold devices, these effects may be more important than thermal effects, depending on the stress in the oxide. They put a lower limit on the built-in index guiding to be introduced by lateral etch outside the ridge region in order to maintain fundamental mode operation for wider stripes. The magnitude of these effects may be as large as Δn_ef=1×10^-3. An analytical mathematical model is deduced for computing stresses and strains for a certain ridge-shaped interface which bounds the elastic medium     

CuIn1−xGaxSe2‐based thin‐film solar cells by the selenization of sequentially evaporated metallic layers

Polycrystalline CuIn_1−xGa_xSe₂ (CIGS) thin films were deposited by the non‐vacuum, near‐atmospheric‐pressure selenization of stacked metallic precursor layers. A study was carried out to investigate the influence of significant factors of the absorber on the solar cells performance. An efficiency enhancement was obtained for Cu/(In+Ga) atomic ratios between 0·93 and 0·95. The slope of the observed energy bandgap grading showed a strong influence on the V_OC and the short circuit current density J_SC. An increase of the Ga content in the active region of the absorber was achieved by the introduction of a thin Ga layer on the Mo back contact. This led to an improvement of efficiency and V_OC. Furthermore, an enhanced carrier collection was detected by quantum efficiency measurements when the absorber layer thickness was slightly decreased. Conversion efficiencies close to 10% have been obtained for these devices. Copyright © 2005 John Wiley & Sons, Ltd.