Safety design of Pb–Bi-cooled direct contact boiling water fast reactor (PBWFR)

In Pb–Bi-cooled direct contact boiling water small fast reactor (PBWFR), steam is generated by direct contact of feedwater with primary Pb–Bi coolant above the core, and Pb–Bi coolant is circulated by steam lift pump in chimneys. Safety design has been developed to show safety features of PBWFR. Negative void reactivity is inserted even if whole of the core and upper plenum are voided hypothetically by steam intrusion from above. The control rod ejection due to coolant pressure is prevented using in-vessel type control rod driving mechanism. At coolant leak from reactor vessel and feedwater pipes, Pb–Bi coolant level in the reactor vessel required for decay heat removal is kept using closed guard vessel. Dual pipes for feedwater are employed to avoid leak of water. Although there is no concern of loss of flow accident due to primary pump trip, feedwater pump trip initiates loss of coolant flow (LOF). Injection of high pressure water slows down the flow coast down of feedwater at the LOF event. The unprotected loss of flow and heat sink (ATWS) has been evaluated, which shows that the fuel temperatures are kept lower than the safety limits.     

Dependence of PXR beam performance on the operation of the pulsed electron linac

Advanced applications of parametric X-ray radiation (PXR) such as energy-dispersive X-ray absorption fine structure (DXAFS) analysis and phase-contrast imaging have been developed at the Laboratory for Electron Beam Research and Application (LEBRA) of Nihon University. To improve the electron beam quality and geometrical stability of the target crystal, the cooling-water system for the linac and the PXR target was replaced with a new one capable of more precise control. As a result, the reliability of the experimental data in PXR applications, especially in X-ray imaging, has improved. The effect of the electron beam focusing on the target crystal was also investigated. The results of X-ray imaging with a long propagation distance and measurement of the time-structure of the PXR intensity suggest that the correlation between the electron beam profile and the X-ray coherence is rather complicated. It is possible that incident electrons cause some deformation of the target crystal, becoming the dominant factor restricting the quality of intense PXR.     

Comparative study of absorbing boundary conditions for thetime-domain beam propagation method

Various absorbing boundary conditions (ABCs) are compared in the analysis of the time-domain finite-difference beam propagation method. For a one-dimensional problem, the following ABCs are tested: Higdon's absorbing boundary, Ramahi's complementary operators method (COM), its concurrent version (C-COM) and Berenger's perfectly matched layer (PML). It is found that the second- and third-order C-COMs with three and four boundary cells are comparable to the PMLs with eight and 16 cells, respectively. The effectiveness of the C-COM is also discussed in a two-dimensional problem     

Multiphoton stimulated Compton laser

When Compton backscattering (head to head collisions) arises between a relativistic electron beam and one of two intense counterpropagating laser beams, electrons are mainly scattered by the laser beam from the reverse direction and can hardly interact with the other laser beam propagating in the same direction. Thus, the interaction of electrons with the latter laser beam, which induces stimulated Compton scattering, can be treated as a perturbation. With perturbation theory, we calculate the probability of stimulated emission and absorption of the photons by electrons in two intense counterpropagating laser beams. The results demonstrate that stimulated emission or absorption is significant only if the momenta of photons and the energy of the electron satisfy certain condition. We also formulate the gain coefficient of the multiphoton stimulated Compton laser, which is sensitive to the intensity of the pumping laser and the energy spread of the electron beam     

Fabrication method for IC-oriented Si single-electron transistors

A new fabrication method for Si single-electron transistors (SETs) is proposed. The method applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate. During the oxidation, the Si wire with the fine trench is converted, in a self-organized manner, into a twin SET structure with two single-electron islands, one along each edge of the trench, due to position-dependent oxidation-rate modulation caused by stress accumulation. Test devices demonstrated, at 40 K, that the twin SET structure can operate as two individual SET's. Since the present method produces two SET's at the same time in a tiny area, it is suitable for integrating logic circuits based on pass-transistor type logic and CMOS-type logic, which promises to lead to the fabrication of single-electron logic LSIs     

Influence of Diffused Boron Into MgO Barrier on Pinhole Creation in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

A relationship between boron (B) diffusion into the MgO barrier and pinhole creation in CoFeB/MgO/CoFeB-magnetic tunnel junctions (MTJs) was investigated. The diffused B in the MgO layer was identified by secondary ion mass spectrometry for the MTJs annealed at 350degC , which provide the giant magnetoresistance (TMR) ratio. The pinhole density, estimated from the statistic distribution of breakdown voltage of the TMR properties, increased as either the thickness or the B content of the CoFeB layer became thicker or higher. These experimental findings imply that the diffused B into the MgO barrier creates pinholes to short-circuit the tunnel conduction, since the amount of diffused B into the MgO barrier might be related to the total amount of the B content in the CoFeB layer. Three different techniques were found to be useful for the reduction of diffused B into the MgO barrier layer; usage of materials having boron affinity for capping layer, decrease of the total amount of B-content in CoFeB layer, and reduction of grain boundaries in the MgO barrier layer.