Photonic Crystal Palette of Binary Block Copolymer Blends for Full Visible Structural Color Encryption

Structural color (SC) arising from a periodically ordered self-assembled block copolymer (BCP) photonic crystal (PC) is useful for reflective-mode sensing displays owing to its capability of stimuli-responsive structure alteration. However, a set of PC inks, each providing a precisely addressable SC in the full visible range, has rarely been demonstrated. Here, a strategy for developing BCP PC inks with tunable structures is presented. This involves solution-blending of two lamellar-forming BCPs with different molecular weights. By controlling the mixing ratio of the two BCPs, a thin 1D BCP PC film is developed with alternating in-plane lamellae whose periodicity varies linearly from ≈46 to ≈91 nm. Subsequent preferential swelling of one-type lamellae with either solvent or non-volatile ionic liquid causes the photonic band gap of the films to red-shift, giving rise to full-visible-range SC correlated with the pristine nanostructures of the blended films in both liquid and solid states. The BCP PC palette of solution-blended binary solutions is conveniently employed in various coating processes, allowing facile development of BCP SC on the targeted surface. Furthermore, full-color SC paintings are realized with their transparent PC inks, facilitating low-power pattern encryption.     

A novel simplified process for fabricating a very high densityp-channel trench gate power MOSFET

A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch²) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm² with a breakdown voltage of -36 V     

Equalization digital on-channel repeater in the single frequency networks

Digital On-Channel Repeater (DOCR) can be used for Single Frequency Networks (SFN's). It is much simple and low cost compared to Distributed Transmitter which needs Studio to Transmitter Link (STL). However, traditional DOCR has one of those defects such as a power limit, a long time system processing delay or a poor output signal quality. In order to overcome all of those defects, we introduce Equalization DOCR (EDOCR) which regenerates the original 8-VSB output signal with relatively short time system processing delay. Lab. and Field test results show that the EDOCR can eliminate the loop-back signal up to 5.5 dB with 5.5 /spl mu/s system processing delay. By using EDOCR, we can save spectrum resources and extend coverage areas.     

Non-functionalized soluble diketopyrrolopyrrole: Simplest p-channel core for organic field-effect transistors

We report the synthesis, characterization and behavior in field-effect transistors of non-functionalized soluble diketopyrrolopyrrole (DPP) core with only a solubilizing alkyl chain (i.e. –C₁₆H₃₃ or –C₁₈H₃₇) as the simplest p-channel semiconductor. The characteristics were evaluated by UV–vis and fluorescence spectroscopy, X-ray diffraction, cyclic voltammetry (CV), thermal analysis, atomic force microscopy (AFM) and density functional theory (DFT) calculation. For top-contact field-effect transistors, two types of active layers were prepared either by a solution process (as a 1D-microwire) or thermal vacuum deposition (as a thin-film) on a cross-linked poly(4-vinylphenol) gate dielectric. All the devices showed typical p-channel behavior with dominant hole transports. The device made with 1D-microwiress of DPP-R18 showed field-effect mobility in the saturation region of 1.42 × 10^?2 cm²/V s with I_ON/I_OFF of 1.82 × 10³. These findings suggest that the non-functionalized soluble DPP core itself without any further functionalization could also be used as a p-channel semiconductor for low-cost organic electronic devices.     

Designing a Stable Cathode with Multiple Layers to Improve the Operational Lifetime of Polymer Light‐Emitting Diodes

The short device lifetime of blue polymer light‐emitting diodes (PLEDs) is still a bottleneck for commercialization of self‐emissive full‐color displays. Since the cathode in the device has a dominant influence on the device lifetime, a systematic design of the cathode structure is necessary. The operational lifetime of blue PLEDs can be greatly improved by introducing a three‐layer (BaF₂/Ca/Al) cathode compared with conventional two‐layer cathodes (BaF₂/Al and Ba/Al). Therefore, the roles of the BaF₂ and Ca layers in terms of electron injection, luminous efficiency, and device lifetime are here investigated. For efficient electron injection, the BaF₂ layer should be deposited to the thickness of at least one monolayer (～3 nm). However, it is found that the device lifetime does not show a strong relation with the electron injection or luminous efficiency. In order to prolong the device lifetime, sufficient reaction between BaF₂ and the overlying Ca layer should take place during the deposition where the thickness of each layer is around that of a monolayer.     

Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel

This paper presents a new driving scheme for the improvement and flexibility of a color temperature without sacrificing a peak white luminance using an independent control of the red (R), green (G), and blue (B) luminance in an alternating current plasma display panel (AC-PDP). The independent control for the R, G, and B emissions can be achieved by selective application of the various narrow auxiliary pulses to the R, G, and B address electrodes during a sustain-period. The auxiliary pulses can control the luminance levels independently from the R, G, and B cells by forming the fast and efficient plasma or by slight disturbing of the wall charge accumulation. By the application of various auxiliary pulses leading to the simultaneous control of each color's luminance, it is observed that the new driving scheme can improve the color temperature from 5396 K to 10 980 K in a 4-in test panel with almost the same peak white luminance as that of the conventional driving scheme.     

Meshing wireless personal area networks: Introducing IEEE 802.15.5

This article presents an overview of the IEEE project 802.15.5 that targets providing mesh capabilities to both high-rate and low-rate wireless personal area networks. Low-rate mesh is built on IEEE 802.15.4 MAC, while high-rate mesh utilizes IEEE 802.15.3 MAC. We seek to share our insights and motivations of the approach adopted in the major components of the standard instead of presenting a la carte items drawn in the specification. We hope this article helps readers of the 802.15.5 standard to better understand the rationale and intent of the protocol design.     

Well‐Defined Functional Linear Aliphatic Diblock Copolyethers: A Versatile Linear Aliphatic Polyether Platform for Selective Functionalizations and Various Nanostructures

Low‐temperature anionic ring‐opening homopolymerizations and copolymerizations of two glycidol derivatives (allyl glycidyl ether (AGE) and ethoxyethyl glycidyl ether (EEGE)) are studied using a metal‐free catalyst system, 3‐phenyl‐1‐propanol (PPA) (an initiator) and 1‐tert‐butyl‐4,4,4‐tris(dimethylamino)‐2,2‐bis[tris‐(dimethylamino)phosphoranylidenamino]‐2Λ⁵,4Λ⁵‐catenadi(phosphazene) (t‐Bu‐P₄) (a promoter) in order to obtain well‐defined functional linear polyethers and diblock copolymers. With the aid of the catalyst system, AGE is found to successfully undergo anionic ring‐opening polymerization (ROP) even at room temperature (low reaction temperature) without any side reactions, producing well‐defined linear AGE‐homopolymer in a unimodal narrow molecular weight distribution. Under the same conditions, EEGE also undergoes polymerization, producing a linear EEGE‐homopolymer in a unimodal narrow molecular‐weight distribution. In this case, however, a side reaction (i.e., chain‐transfer reaction) is found to occur at low levels during the early stages of polymerization. The chemical properties of the monomers in the context of the homopolymerization reactions are considered in the design of a protocol used to synthesize well‐defined linear diblock copolyethers with a variety of compositions. The approach, anionic polymerization via the sequential step feed of AGE and EEGE as the first and second monomers, is found to be free from side reactions at room temperature. Each block of the obtained linear diblock copolymers undergoes selective deprotection to permit further chemical modification for selective functionalization. In addition, thermal properties and structures of the polymers and their post‐modification products are examined. Overall, this study demonstrates that a low‐temperature metal‐free anionic ROP using the PPA/t‐Bu‐P₄ catalyst system is suitable for the production of well‐defined linear AGE‐homopolymers and their diblock copolymers with the EEGE monomer, which are versatile and selectively functionalizable linear aliphatic polyether platforms for a variety of post‐modifications, nanostructures, and their applications.     

Joint Optimization of User Set Selection and Transmit Power Allocation for Orthogonal Random Beamforming in Multiuser MIMO Systems

When the number of users is finite, the performance improvement of the orthogonal random beamforming (ORBF) scheme is limited in high signal‐to‐noise ratio regions. In this paper, to improve the performance of the ORBF scheme, the user set and transmit power allocation are jointly determined to maximize sum rate under the total transmit power constraint. First, the transmit power allocation problem is expressed as a function of a given user set. Based on this expression, the optimal user set with the maximum sum rate is determined. The suboptimal procedure is also presented to reduce the computational complexity, which separates the user set selection procedure and transmit power allocation procedure.     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.