Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

Design and calibration of curved and see-through integral imaging 3D display

Virtual Reality - Heads-up displays that are ‘see-through’ and ‘curved’ and capable of displaying 3D contents are considered crucial for augmented reality-based navigation...     

Administration-time-dependent effects of diltiazem on the 24-hour blood pressure profile of essential hypertension patients

Cells of the central nervous system (CNS) normally do not express detectable levels of major histocompatibility complex (MHC) Class I antigens. However, MHC Class I expression can be induced after virus infection. We tested the hypothesis that virus-induced Class I expression is mediated by lymphocytes or cytokines using lymphocyte- and cytokine-deficient mice. We used Theiler's murine encephalomyelitis virus (TMEV), which induces CNS demyelination that maps genetically to the D region of MHC Class I and is associated with high levels of Class I products. TMEV infection of severe combined immunodeficiency (SCID) and recombination activation gene-1-deficient mice, which lack B and T lymphocytes, resulted in equivalent H-2D and H-2K expression in brain and spinal cord, according to analysis of the area and intensity of immunoperoxidase staining. Class I antigens were demonstrated as early as 6 hours after infection, and they were more widely distributed than viral RNA, indicating that expression was induced indirectly via a soluble factor. To determine whether cytokines induced the expression, we infected mice lacking receptors for interferon-alpha/beta (IFN-alpha/beta R (-/-)), interferon-gamma (IFN-gamma R(-/-)), and tumor necrosis factor-alpha (TNFRp55(-/-)). TMEV-infected IFN-gamma R(-/-) and TN-FRp55(-/-) mice expressed Class I antigens in the CNS, whereas IFN-alpha/beta R(-/-) mice did not, establishing that IFN-alpha/beta mediated the expression. In contrast to the equivalent expression in SCID mice, we observed greater area and higher intensity of H-2D versus H-2K antigens in infected SCID mice reconstituted with normal spleen cells. Collectively, the data indicate that after TMEV infection, early generalized MHC Class I expression is mediated by IFN-alpha/beta independently of lymphocytes, but the differential regulation of H-2D over H-2K may be controlled by B and/or T lymphocytes.     

Tuning-current splitting network for three-section DBR lasers

A simple current-splitting network for DBR-laser frequency tuning is proposed that distributes a single control current among two tuning sections and can adjust the current distribution without yielding impedance mismatching. The nonlinear characteristics of the tuning sections realise the non-proportional current splitting suitable for continuous tuning; 470 GHz (3.8 nm) tuning range is achieved     

Absolute linearity measurements on HgCdTe detectors in the infrared region

The nonlinearity characteristics of photoconductive and photovoltaic HgCdTe detectors were experimentally investigated in the infrared wavelength region by use of the National Physical Laboratory detector linearity measurement facility. The nonlinearity of photoconductive HgCdTe detectors was shown to be a function of irradiance rather than the total radiant power incident on the detector. Photoconductive HgCdTe detectors supplied by different vendors were shown to have similar linearity characteristics for wavelengths around 10 microm. However, the nonlinearity of response of a photovoltaic HgCdTe detector was shown to be significantly lower than the corresponding value for photoconductive HgCdTe detectors at the same wavelength.     

Numerical study on the spectroscopic ellipsometry of lamellar gratings made of lossless dielectric materials

The spectroscopic ellipsometry of lamellar gratings made of lossless dielectric materials is studied numerically by using the rigorous coupled-wave method with the use of Li's Fourier factorization rules [J. Opt. Soc. Am. A 13, 1870 (1996)], which are known to improve the convergence on the analyses of metallic gratings. Numerical results show that the calculation method also provides fast convergence on lossless gratings, and accurate values of the ellipsometric angles are obtained in very short computation times. Moreover, estimation of grating parameters is investigated by using a cost function defined by the average distance on the Poincaré sphere, and it is shown that the computation required for accurate estimation is possible in reasonable computation time.     

基于媒体独立切换并提供QoS保证的跨UMTS和WiMAX无线异构网络的网络切换方案

The rapid growth and innovation of the various mobile communication technologies have caused a change in the paradigm of internet access. Wireless technologies such as WiMAX, WiFi and UMTS/LTE networks have shown great potential in dominating the wireless access markets. The existence of various access technologies requires a means for seamless internetworking to provide anywhere, anytime services without interruption in the ongoing session, especially in multimedia applications with rigid Quality of Services (QoS) requirements. The IEEE 802.21 Media Independent Handover (MIH) working group was formed to develop a set of mechanisms under a standard framework with the capability to support migration of mobile users across heterogeneous networks. Therefore, the implementation of handover is extremely important in the heterogeneous network environment. In order to guarantee various QoS requirements during handover execution especially in multimedia applications, in this paper we propose a novel MIH-based capacity estimation algorithm to execute handover with QoS provision supporting both horizontal and vertical handovers across UMTS and WiMAX networks. Simulation shows that the proposed mechanism achieves lower call dropping rate (highest approximate 3% ) and higher system throughput (average 92% ) than the basic handover method does.     

Behavior of insoluble materials in artificial contamination tests

It was reported that the dc flashover voltage under an artificial contamination test sometimes was affected considerably by the type of insoluble materials in the contaminant. To clarify the cause of this phenomenon, the physical characteristics of some contamination slurries and the conductivity of the artificially contaminated insulator surfaces are investigated experimentally. The test results lead to the conclusion that the variation in the flashover voltage is caused mainly by the characteristics of conductive films formed on the insulator surface in the clean fog test     

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InPMODFET's with 300 GHz fT and 2 S/mm extrinsictransconductance

We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 μm gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum extrinsic transconductance is as high as 2 S/mm with an associated drain current of 0.5 A/mm at a drain bias of 1 V. This high performance is a result of the reduction or gate length, the use of the high barrier metal Pt as gate electrodes, and most importantly the employment of the well-developed wet-etching technology that allows the formation of a very deep gate groove while retaining small side etching. The excellent E-MODFET performance opens up the possibility of implementing ever faster high-speed circuits based on direct-coupled FET logic