物理层安全约束下的AF双向中继系统波束赋形和人工干扰联合设计

波束赋形和人工干扰是现有研究中最为常见的两种物理层安全增强技术,本文针对AF （放大转发）双向中继模型,探讨了两者的联合设计问题。在已知理想信道状态信息的条件下,本文提出了一种波束赋形和人工干扰的混合协同传输方案,推导了总功率受限条件下的和安全速率,通过两步迭代搜索算法得到了其最佳联合方案,并与一种低复杂度的次佳联合方案进行比较。仿真结果验证了所得联合方案优于次佳联合方案,并进一步改善了AF双向中继系统的安全性能。     

802.11无线网状网中基于时频信道的准动态信道分配算法

该文首次在多天线多信道802.11无线网状网中提出了时频信道的概念。时频信道是通过在时间和频率两个维度划分无线资源取得的。这种划分方法增加了信道数量,使信道划分更加精细,为提高系统的信道利用率做了准备。在时频信道的基础上,提出了准动态信道分配算法。该算法可以和现有的固定信道分配算法结合,实现准动态信道分配,根据链路上负载变化,取得最大的吞吐量。该算法先根据固定信道分配算法为各链路分配相同数量的时频信道,剩余部分当作公共信道。在通信过程中,各链路首先使用分配给自己的信道和空闲的公共信道。如果分配给一个链路的信道不够,且别的链路上的信道有空闲,该链路还可以暂时使用这些空闲信道。理论分析和仿真结果证明该算法可以有效提高系统的吞吐量。     

波带交换中一种新型的多颗粒光交叉连接结构

随着波分复用(WDM)技术的迅速发展和广泛应用,光网络中交叉连接的规模不断增大,网络结构也越来越复杂.为了降低WDM网络中光域传输和交换的成本,人们提出了波带交换(WBS)技术,并对此进行了大量的研究.文章介绍了部分WBS和多颗粒光交叉连接(MG-OXC)的基本概念,并提出了一种新型的MG-OXC结构.     

Feature extraction in carpal-bone analysis

Hand-bone analysis with image processing techniques using a digital radiograph can be used to assess skeletal age. The analysis consists of two steps: phalangeal and carpal bone analysis. The carpal bone analysis is discussed. First, the carpal bone region of interest (CROI) is defined using a standard thresholding technique to separate the hand from the background. Then, a dynamic thresholding method with variable window sizes is used to differentiate between the bones and the soft tissue. Next, the radius, ulna, and metacarpals intersecting the borders of the CROI are removed by using mathematical morphology. Finally, all objects included in the corrected CROI are separated and described in terms of features. These features describe the size, shape, and location and include some gray-scale pixel value information. On the basis of this analysis, the separation of the noncarpal bone objects from the carpal bone is possible. The feature selection step removes features of low discriminant power and reduces the space dimension. The remaining carpal bone parameters are used for further analysis leading to skeletal age assessment.     

Texture analysis and classification with tree-structured wavelettransform

A multiresolution approach based on a modified wavelet transform called the tree-structured wavelet transform or wavelet packets is proposed. The development of this transform is motivated by the observation that a large class of natural textures can be modeled as quasi-periodic signals whose dominant frequencies are located in the middle frequency channels. With the transform, it is possible to zoom into any desired frequency channels for further decomposition. In contrast, the conventional pyramid-structured wavelet transform performs further decomposition in low-frequency channels. A progressive texture classification algorithm which is not only computationally attractive but also has excellent performance is developed. The performance of the present method is compared with that of several other methods.     

Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states

An analytical drain current model for a-Si:H TFTs obtained by considering deep and tail states simultaneously is presented. Using an effective temperature approach, the localised deep and tail states have been considered in the DC model such that no approximations are needed. As verified by the published data, this analytical DC model provides an accurate prediction of the drain current characteristics of an a-Si:H thin film transistor.<>     

Design and analysis of defect tolerant hierarchical sortingnetworks

A hierarchical modular sorting network which achieves a balance in area-time cost between the odd-even transposition sort and the bitonic sort is presented. It consumes less hardware than a single-level odd-even sorter and reduces the wire complexity of the bitonic sorter in VLSI or WSI (wafer-scale integration) implementation. The optimal number of levels in the hierarchy is evaluated, and the sorting capability of each level is derived so as to minimize the hardware overhead. The hierarchical sorting network is very regular in structure and hence defect tolerance capability can be included more easily than in any existing sorting network with the same time complexity. Redundancy is provided at every level of the hierarchy. Hierarchical reconfiguration is performed by replacing the defective cells at the bottom level with the spare cells first and repeating the process at the next higher level if there is not enough redundancy at the current level. Yield analysis is performed to demonstrate the effectiveness of the approach     

A BiCMOS dynamic carry lookahead adder circuit for VLSIimplementation of high-speed arithmetic unit

A BiCMOS dynamic carry lookahead circuit that is free from race problems is presented. A 16 b full-adder test circuit, which has been designed based on a 2 μm BiCMOS technology, shows a more than five times improvement in speed as compared to the CMOS Manchester carry lookahead (MCLA) circuit. The speed advantage of the BiCMOS dynamic carry lookahead circuit is even greater in a 32- or 64-b adder     

OMVPE growth of InP and Ga0.47ln0.53as using ethyldimethylindium

We report the organometallic vapor phase epitaxial (OMVPE) growth of InP and Ga_0.47In_0.53As using a new organometallic indium source, ethyldimethylindium (EDMIn), rather than the traditional sources triethylindium (TEIn) or trimethylindium (TMIn). EDMIn is a liquid at room temperature and its vapor pressure at 17° C was found to be 0.85 Torr using thermal decomposition experiments. The growth results using EDMIn were compared to those using TMIn in the same atmospheric pressure reactor. For InP, use of EDMIn resulted in a high growth efficiency of 1.3 × 10⁴ μm/ mole, which was independent of the growth temperature and comparable to the growth efficiency obtained with TMIn. The high growth efficiency is consistent with the observation of no visible parasitic gas phase reactions upstream of the substrate. The 4K photoluminescence (PL) spectra consist of a peak due to bound excitons and an impurity related peak 38 meV lower in energy. This impurity peak is ascribed to conduction band to acceptor transitions from carbon, due to the decreasing relative intensity of this peak with increasing V/III ratio. The relative intensity of the C impurity peak decreases by five times when the growth temperature is increased from 575 to 675° C, with a corresponding increase in the room temperature electron mobility from 725 to 3875 cm²/ Vs. For GalnAs lattice-matched to InP, use of EDMIn also resulted in a temperatureindependent high growth efficiency of 1.0 x 10⁴ μm/mole, indicating negligible parasitic reactions with AsH₃. The In distribution coefficient was nearly constant at a value of 0.9, however the run to run composition variation was slightly higher for EDMIn than for TMIn. The 4K PL showed donor-acceptor pair transitions due to C and Zn. The C impurity peak intensity decreased dramatically with increasing growth temperature, accompanied by an increase in the room temperature electron mobility to 5200 cm²/Vs. Overall, the growth of both InP and GalnAs using EDMIn was qualitatively similar to that using TMIn, although the room temperature electron mobilities were lower for the new source than for our highest purity bottle of TMIn.     

Saturation of cyclotron maser instability driven by an electron loss-cone distribution

The resoinance diffusion of electrons in velocity space caused by the excited EM wave fields is considered to be the dominant saturation process of cyclotron maser instability that is driven by an electron loss-cone distribution. An upper-bound of the saturation level is derived analytically. Since the resulting saturation level is low the resonance diffusion is indeed responsible for the saturation of the cyclotron maser instability.