Analysis of thermal instability in multi-finger power AlGaAs/GaAsHBT's

A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's). The reasons behind this unwanted phenomenon are fully clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The existence of multi-value equilibrium points in model's constitutive equations is shown to be the necessary condition for the collapse of current gain to appear. For a N-finger device, N different patterns of collapse exist. The criterion to select the global stable pattern is given. The method has been used to predict the collapse in AlGaAs/GaAs HBT's and the agreement is excellent. The method also predicts that the collapse can happen far earlier than is normally expected in multi-finger high-power devices. The influence of ballasting resistance and thermal resistance is also investigated     

对洪水分级的浅见

洪水的等级划分应考虑流量、水位、防洪能力及灾害等因素,综合这些因素把洪水分成5个等级。1、2级洪水,洪水流量小,水位低,基本无灾;3级洪水,洪水流量较大或水位较高,有一定灾害;4级洪水,为大洪水或高水位,有较大灾害;5级洪水,为特大洪水或高水位,灾情严重。     

新的钢铁工业结构与铁矿资源条件的能源优化模型研究

发展我国钢铁工业，资源和能源已经成为两个重要的制约因素。到本世纪末，我国钢产量达1．2亿t，所需资源必须有部分进口。本文论述了新的钢铁企业模型结构及采用部分进口废钢和铁矿石的能源优化问题。     

相转移催化合成芳基烷基醚

报道了以四丁基溴化铵为相转移催化剂，简便地合成了１０个芳基烷基醚，反应几乎是定量地快速进行。     

钢管内径光电检测装置

介绍了一种检测细长钢管内径的光电检测装置。该装置利用线阵ＣＣＤ作传感器，采用８０３１单片机作为主控制。     

Air bearing design, optimization, stability analysis andverification for sub-25 nm flying

Three sub-25 nm fly height sliders are presented for near contact recording. The designs are geared towards the goal of achieving 10 Gb/in ² areal density. The optimization procedure presented shows promise for facilitating achievement of this goal. The dynamic simulations show the stability of these designs when disturbed from their steady state conditions     

模拟光耦SLC800在转台系统中的应用

在大功率转台控制系统中．存在着较大的电压干扰和电磁兼容问题。在转台的控制精度和驱动功率不断提高的情况下．本文使用模拟光耦隔离器件SLC800重新设计了转台中的某部分模拟电路．将功率放大电路和控制电路隔开，来增强系统的抗干扰能力和运行的可靠性。实验结果的分析和转台的运行表明：应用模拟光耦进行隔离，有效地消除了转台控制中的干扰和电磁兼容。     

Measurement and modeling of the sidewall threshold voltage ofmesa-isolated SOI MOSFETs

Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage     

情浸丹青写名园——小谈郝永明的古建园林绘画艺术

郝永明古建园林绘画作品另辟蹊径，难能可贵。郝永明的画，不仅给我国美术宝库增加了一份积累，也给古建园林艺术增添了珍贵的资料。     

A 4-MB on-chip L2 cache for a 90-nm 1.6-GHz 64-bit microprocessor

A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process.