An orthogonal basis for the hyperbolic hybrid polynomial space

Motivated by the wide usage of the Tchebyshev basis and Legendre basis in the algebra polynomial space, we construct an orthogonal basis with the properties of the H-Bézier basis in the hyperbolic hybrid polynomial space, which is similar to the Legendre basis and holds remarkable properties. Moreover, we derive the transformation matrices that map the H-Bézier basis and the orthogonal basis forms into each other. An example for approximating the degree reduction of the H- Bézier curves is sketched to illustrate the utility of the orthogonal basis.     

Investigation of the initial stage of borating tantalum

The results of investigation of initial stage of the tantalum borating as well as the effect of oxygen and hydrogen on it are presented. The scheme of the initial stage of tantalum boron saturation is proposed.     

External heat transfer in infiltrated granular beds. Experimental study

Experimental data was obtained on external heat transfer in infiltrated granular beds of coarse particles. It was determined that calcualtions with the proposed model agree satisfactorily with the experimental results.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 6, pp. 919–923, December, 1988.     

Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

A method for measuring the characteristics of tunneling and impact ionization in thin-film electroluminescent emitters is suggested. This method makes it possible to find time dependences of the space-charge layer thickness near the anode and the length of the impact ionization region, to determine more exactly the time dependence of the field in the potential barrier at the cathode interface, the maximum depth of the surface states from which electron tunneling occurs, the minimum thickness of the barrier, and the electron tunneling probability, as well as the impact ionization rate for the deep centers related to structural defects of the phosphor layer.     

Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures

Focused ion beam (FIB) and nano-probing were applied for failure analysis of three-dimensional stacked circuits with copper through-silicon-vias between the stacked chips. The failure analysis was done after high temperature storage and thermal cycling tests. Passive voltage contrast in FIB allowed to pinpoint the open sites. FIB cross-sections showed the presence of opens at the bottom of the copper vias. The failure cause was suspected to be an interlayer particle, which was confirmed by optical profilometry. Nano-probing was used on another sample to pinpoint the failure location through the measurement of the local resistance within the daisy chains. The failure was traced out to be related with surface contamination.     

Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings.