一种新的计算稀疏数据立方体的方法

在飞速发展的信息社会中，数据的使用量逐渐增多，在大量的数据中存在很多稀疏数据。现介绍一个高度运行雏层次聚集立方体（DHAC，dimension hierarchy aggregate cube）和对应的增量更新算法，使用该算法进行稀疏数据立方体的计算。     

Monolithically integrated InGaAs/InP MSM-FET photoreceiver preparedby chemical beam epitaxy

The first monolithic integration of a metal-semiconductor-metal (MSM) InGaAs photodetector with a field-effect transistor (FET) and resistors into a high-impedance front-end photoreceiver circuit is discussed. The sample was grown in a single step by chemical beam epitaxy, and standard processing steps for making FETs were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector, and the electrical isolation layer between the photodetector and the electronic circuit. A bit error rate of less than 10^-9 at 200 Mb/s has been achieved with this preliminary circuit for an optical power of -17 dBm     

基于Matlab和串口通信的ADC动态性能FFT测试法

高速ADC是数字电路系统中不可或缺的组成部分,其动态性能直接决定了系统性能的好坏.ADC的动态性能常用测试方法很多,但都较为复杂.提出了一种新的ADC动态性能FFT测试方法,该方法结合Matlab软件和串口通信两者优势,可以方便快捷地对ADC动态性能进行测试.最后给出了采用该方法对一包含ADC的数字电路系统的ADC动态性能实测结果.     

Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography

The presence of lattice strain in n-doped 4H-SiC substrate crystals grown by a physical vapor transport method can strongly influence the performance of related power devices that are fabricated on them. Information on the level and the variation of lattice strain in these wafer crystals is thus important. In this study, a non-destructive method is developed based on synchrotron double-crystal x-ray topography to map lattice strains in 4H-SiC wafers. Measurements are made on two 4H-SiC substrate crystals—one is an unprocessed commercial wafer while the other was subject to a post-growth high-temperature heat treatment. Maps of different strain components are generated from the equi-misorientation contour maps recorded using synchrotron monochromatic radiation. The technique is demonstrated to be a powerful tool in estimating strain fields in 4H-SiC crystals. Analysis of the strain maps also shows that the normal strain components vary much more significantly than do the shear/rotation components, indicating that lattice dilation/compression rather than lattice tilt is the major type of deformation caused by both the incorporation of nitrogen dopants and the nucleation of basal plane dislocations.     

Optimized TQ-MAP: An Adaptive Mapping Mechanism to Guarantee the Coherence of QoS Support from IP to OBS

Because of its scalability, the idea of coarse packet classification can be utilized to OBS networks. However, due to the limited number of priorities supported by OBS networks, we usually adopt a many-to-one composite class burst (CCB) assembly technique, e.g., N:1-CCB. In this kind of technique, there are two aspects related to scalable QoS support, i.e., mapping relationship and assembly resource allocation. This paper simultaneously takes the two aspects into consideration, and proposes a novel assembly mapping mechanism, called Optimized TQ-MAP, in which the most important feature is adaptivity. Based on nonlinear programming and differential calculus, it allocates the burst assembling capacity between classes fairly, efficiently and differentially, and matches IP QoS requirement with OBS QoS capacity as possible as it can. The simulation results show that Optimized TQ-MAP is more adaptive, and can efficiently guarantee the coherence of QoS support from IP to OBS.     

“通信系统综合实验”教学平台建设

“通信系统综合实验”是我院一门综合性、实践性课程,在多年的教学实践中积累了大量的实验成果.在原有实验开设项目的基础上引入基于USRP和LabVIEW的通信系统实验平台,将真实的通信信道考虑到无线通信系统设计当中,使无线通信系统软件仿真和硬件实现真正统一,并为无线通信新技术的扩展学习和研究提供了可能.     

Current mismatch due to local dopant fluctuations in MOSFET channel

A microscopic multitransistor model is developed to analyze the impact of local dopant fluctuation on the intrinsic mismatch of long-channel MOSFET. A closed analytical formula for current mismatch is derived to show a nonscaled and self-consistent form /spl sim/[4+Log(L/L/sub min/)]/WL. This is in contrast to the global fluctuation model, in which the current mismatch has a universal scaling form /spl sim/1/WL but is not self-consistent if a MOSFET is modeled as an equivalent two-transistor system. The weak violation of scaling law results from the local fluctuation that has more impact on longer channel devices than on shorter ones. Our new model is consistent with recent experimental observation and can explain the discrepancies between the experimental data and the existing models. The analysis indicates that the local dopant fluctuation is the major cause and accounts for about 60% to 80% of total current mismatch when operated at lower gate voltage, a usual regime for higher output impedance.     

2D DOA estimation for noncircular sources using L-shaped sparse array

We present an algorithm for two-dimensional (2D) direction-of-arrival (DOA) estimation of noncircular sources using an L-shaped sparse array. An L-shaped sparse array consisting of two co-prime arrays is firstly introduced. Then, the fourth-order-cumulants (FOCs) of received data are used to construct a FOC matrix (FOCM), by which we can get the estimations of elevation angles. With the estimated elevation angles, the azimuth angles can be estimated by a low-complexity signal separation algorithm. During the procedure used for estimating azimuth angles, no any eigenvalue decomposition (EVD), peak search and pair-matching procedure need to be implemented. Although the aperture is extended significantly, the computation complexity of proposed algorithm still is acceptable. Compared with some analogous algorithms, our approach shows more attractive estimation performance. A lot of simulation results prove the advantages of proposed DOA estimation technology.     

低损耗单模尾纤2×2光开关

本文报导了一种新研制的低损耗带单模尾纤的2×2光开关,工作波长1.3μm。讨论了器件工作原理,详细描述了其制作工艺和测试方法。器件插入损耗小于5dB,开关电压小于8V,消光比大于15dB。