Low Temperature Physics at the Laboratoire National des Champs Magnétiques Pulsés in Toulouse

An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned.     

Colloidal processing of polymer ceramic nanocomposite integral capacitors

Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for the MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMN-PT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contribution) in a slightly polar solvent such as propylene glycol methyl ether acetate (PGMEA) is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, a dielectric constant greater than 135 was achieved in PMN-PT/epoxy system. Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2/spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m).     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Panchromatic Chromophore Mixtures in an AlPO4‐5 Molecular Sieve: Spatial Separation Effects and Energy Transfer Cascades

Dye‐loaded AlPO₄‐5 single crystals were prepared by microwave‐assisted hydrothermal synthesis from a batch, containing a mixture of three chromophores (Coumarin 40, Rhodamine BE50, and Oxazine 1) differing in their absorption range, molecular dimensions, and solubilities. Confocal fluorescence images reveal a spatial separation effect of the dye molecules, where the slimmer, more‐soluble dye molecule (Coumarin 40) is uniformly distributed in the body of the single crystal, and the bulky and/or less‐soluble ones (Rhodamine BE50, Oxazine 1) are situated in distinct domains. Visible spectra show good panchromatic absorption of visible light. Fluorescence lifetime measurements indicate the presence of an energy transfer cascade of the entirely fixed dye molecules from Coumarin 40 to Oxazine 1. The transfer mechanism is predominantly radiative.     

The hot compaction behaviour of woven oriented polypropylene fibres and tapes. I. Mechanical properties

The aim of this work was to establish the important parameters that control the hot compaction behaviour of woven oriented polypropylene. Five commercial woven cloths, based on four different polypropylene polymers, were selected so that the perceived important variables could be studied. These include the mechanical properties of the original oriented tapes or fibres, the geometry of the oriented reinforcement (fibres or tapes), the mechanical properties of the base polymer (which are crucially dependant on the molecular weight and morphology), and the weave style. The five cloths were chosen so as to explore the boundaries of these various parameters, i.e. low and high molecular weight: circular or rectangular reinforcement (fibres or tapes): low or high tape initial orientation: coarse or fine weave.A vital aspect of this study was the realisation that hot compacted polypropylene could be envisaged as a composite, comprising an oriented ‘reinforcement’ bound together by a matrix phase, formed by melting and recrystallisation of the original oriented material. We have established the crucial importance of the properties of the melted and recrystallised matrix phase, especially the level of ductility, in controlling the properties of the hot compacted composite.     

Context-Processing Deficits in Schizotypal Personality Disorder.

Research suggests that schizotypal personality disorder (SPD) is a part of the spectrum of schizophrenia-related illnesses. This article hypothesizes that a deficit in the representation and maintenance of context is a core cognitive disturbance in schizophrenia and that SPD individuals should demonstrate context-processing deficits. To test this hypothesis, the authors administered 3 versions of their AX-CPT task, designed to assess context processing, to 35 healthy controls and 26 individuals with DSM-IV SPD. They also administered working memory and selective attention tasks. SPD individuals displayed context representation deficits similar to those found in schizophrenia but did not show the same additional deficits in context maintenance. Context processing was strongly associated with working memory and selective attention performance in the SPD individuals. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.