Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

羰基铁类随机混合吸波材料等效电磁参数的计算

本文为计及多重散射偶极子间的相互作用，引入参量εｈ和μｈ，导得一组公式。它不仅能计算铁氧体类也能计算羰基铁类的随机混合吸波材料的等效电磁参数，均与实验结果吻合良好。     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Implicit deregistration in a PCS network

Registration/deregistration is required in a PCS network when a portable moves between registration areas. Several schemes were proposed to deregister a portable after it moves out of a registration area (RA). A simple scheme called implicit deregistration totally eliminates network traffic due to deregistration. However, this scheme may delete valid registration records. Thus, the size of a registration database must be sufficiently large to ensure low probability that a valid registration record is deleted. This paper describes an analytic model to determine the size k of the registration database for an RA in the implicit deregistration scheme. If the expected number of portables in an RA is N, then our study indicates that good performance can be achieved if k≃5N     

对我国酱油酿造几项新技术应用之浅见

本文概述了三十年来我国酿造酱油工业开展研究的六项新技术在现阶段的投产可行性，及进一步研究方向的看法。     

A Method of Combined SHPB Technique and BP Neural Network to Study Impact Response of Materials

Abstract:  A new method combining the split Hopkinson pressure bar (SHPB) technique with the back-propagation (BP) neural network program is proposed. By this method, the treated strain wave signals become smooth with less noises induced by the transverse inertia. Moreover, the dynamic rate-dependent constitutive behaviour of materials can be identified, without any pre-assumption of a constitutive model. It is found that by taking the experimentally measured data of strain, strain rate and time as 'input' and the corresponding data of stress as 'output' of the BP neural network, the dynamic constitutive behaviour with internal damage or phase transformation evolution is easy to be identified, where the time could represent either the internal damage evolution or phase transformation process accompanied with the deformation process. It is emphasised that the data learnt by the BP neural network must include both loading and unloading processes, if the whole loading and unloading response is to be correctly predicted. The comparisons between the predictions and experimental results are in good agreement for both polyamide (PA) polymer (as an example of nonlinear viscoelastic materials) and Ti–Ni alloy (as an example of superelastic materials with stress-induced phase transformation).     

Side-Track Erasure Processes in Perpendicular Recording

In perpendicular recording, substantial erasure of the stored data patterns can occur during the writing process. Among all those erasure processes, side-track erasure (STE) is one of the critical issues in drive head/media integration. Unlike the adjacent track erasure (ATE) process, the locations of the STE affected areas are often many tens of tracks away from the central writing track location. In this work, we report on an experimental investigation and quantification of the general attributes and the origins of the STE processes in various situations. Particularly, we thoroughly characterize some distinctive signatures and behaviors of STE processes by employing both the amplitude- and bit-error-rate-based STE measurement methods in combination with a novel magnetic force microscope characterization technique     

A force modulation study on crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films

This paper introduces the Force Modulation technique to the study of crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films. Using this technique we have successfully visualized ferroelectric crystalline domains and observed that these ferroelectric domains grow out from amorphous phase, unite into strip-like structures, and finally congregate into a union. Force Modulation can weaken the influence of topography on imaging of ferroelectric domains, and reveal more details, which are difficult to be observed in topographical image.     

Microwave heating synthesis of HgS and PbS nanocrystals in ethanol solvent

A novel route was developed to prepare PbS and HgS nanocrystals in ethanol solvent in the presence of sodium hydroxide by microwave heating method. PbS and HgS nanocrystals were obtained with an average size of approximately 10 and 6 nm, respectively. In the reaction, mercury acetate and lead acetate were used as mercury and lead source; sulfur powder was employed as chalcogenide source. The products were characterized by X-ray powder analysis (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and UV–Vis absorption spectroscopy. The probable mechanism was presented.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.