锝化学研究 Ⅸ.脑显像剂Tc~(Ⅴ)ON_2S_2类配合物结构稳定性和价态的研究

采用改进的ＣＮＤＯ／２法模拟了ＢＡＴ类脑显像剂Ｔｃ（Ⅴ）Ｏ配合物价态的转换过程，发现Ｎ２Ｓ２类配体与Ｔｃ（Ⅴ）Ｏ核配位时，可能存在配位平衡离子Ｘ。在溶液中由于Ｘ离子的优先解络，瞬间存在＋１价对称性９９Ｔｃｍ配合物，并且，它又自动向相对稳定的０价不对称性９９Ｔｃｍ配合物转换，在动态转换过程中，将导致仅有一个配位Ｎ原子保留一个质子，这与实验结果一致。采用键级削弱百分数概念，表征配位过程的二个配位Ｎ原子上保留程度，解释了Ｔｃ（Ⅴ）Ｏ核、Ｔｃ（Ⅴ）≡Ｎ核Ｎ２Ｓ２类配合物两个Ｎ－Ｈ键上质子保留程度不同的原因，为今后设计不同价态锝配合物结构提供理论依据。     

复合超细丙纶及应用

对国内外细旦丙纶的开发和发展进行了介绍，阐述了单丝纤度为０．１～０．５ｄｔｅｘ的复合超细丙纶的制造方法、原材料规格、复合剥离技术以及产品质量。重点讨论了复合超细丙纶及织物的舒适性、染色性和卫生性，应用于织造、服装领域。     

InGaAs（P）分别限制应变单量子阱激光器的优化设计

针对较常用的ＩｎＧａＡｓ（Ｐ）分别限制应变单量子阱激光器，给出了为得到最大净增益的优化设计参数。对于激射波长为１．５５μｍ的无应变激光器，最佳的光限制层波长为１．２４μｍ，厚度为１００ｎｍ。当阱材料引入压缩应变后．由于价带的有效状态密度减小，量子阱激光器的微分增益变大，阱深的增大对增大线性增益的效果更加明显．所以最佳光限制层的波长将变短，为１．２０μｍ     

Synthesis,Functionalization, and Bioconjugation of Monodisperse,Silica‐Coated Gold Nanoparticles: Robust Bioprobes

Herein, we report an efficient process for preparing monodisperse Au@SiO₂ nanoparticles using homogeneous shaking and without the use of surface‐coupling silane agents or large stabilizers. The resulting pure‐silica surface of the Au@SiO₂ nanoparticles is very important for straightforward surface functionalization with different functional groups via well‐established silica surface chemistry. Subsequent covalent bioconjugation of the aldehyde‐functionalized Au@SiO₂ nanoparticles with various biomolecules is successfully employed to make robust nanoprobes for fast, colorimetric DNA and protein detection based on the sequence‐specific hybridization properties of DNA and the specific binding affinity between proteins, respectively.     

Hardware monitoring of a multiprocessor system

The Testbed for Distributed Processing, or Ted, consists of Intel Corp.'s iSBC 8086 single board computers (SBCs) organized into groups or clusters. Each cluster consists of several SBCs that communicate via a shared memory. Intercluster communication occurs through an Ethernet interface. A hardware monitor designed and implemented to handle the monitoring activities within a cluster in the Ted system is described. By using specified patterns and don't-care masks, the system can detect accesses to selected data, addresses, or blocks of addresses. This function helps monitor events such as the access or usage of a memory location or a group of mailbox addresses. It also determines the amount of time consumed by the performance of specific operations     

北京核电站模拟器硬件的功能和特点

本文介绍北京核电站模拟器硬件构成并分析其功能和特点。     

Fluidised pellet bed bioreactor: a promising technology for onsite wastewater treatment and reuse.

A pilot-scale fluidised pellet bed (FPB) bioreactor, which combines chemical coagulation, biological degradation, particle pelletisation and separation in one unit, was applied for onsite wastewater treatment and reuse. As a result of rational use of inorganic coagulant and organic polymer and moderate mechanical agitation, spherical particles were generated in the upflow column and a well-fluidised bed was formed. With a continuous supply of dissolved oxygen through a recycling loop, an aerobic condition was kept in the bottom section of the FPB column. Under such conditions the pellets in the FPB column showed the following characteristics: (1) compact structure and high density; (2) rich in microorganisms; and (3) high MLSS and MLVSS concentrations. Therefore, the FPB bioreactor achieved more than 90% removal of SS, COD, BOD and TP from raw domestic wastewater within a total hydraulic retention time (HRT) of only about 30 minutes. It also showed nitrification and denitrification ability and the TN removal could be about 50% as the recycling ratio was increased to 1:1. The treated water quality is generally competitive with the secondary effluent from a conventional activated sludge process. With these advantages the FPB bioreactor is recommendable as a compact system for onsite wastewater treatment and reuse.     

对低水头电站规划设计的思考

文章结合平常工作经验,对低水头电站规划设计中需要注意的包括坝(闸)址选择,库区淹(浸)没、枢纽布置、施工导流、正常蓄水位与上下游梯级衔接五个问题加以分析探讨,进行总结和思考。     

High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's(JHEMT's) with regrown ohmic contacts by MOCVD

A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures is dependent on the multiplication of electrons injected from the source (channel current) and the gate (gate leakage) into the channel. In addition, holes are generated by high fields at the drain and are injected back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. Both have been achieved by incorporating a p⁺-2DEG junction as the gate that modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1-μm-gate-length devices fabricated have two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively