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991.
It is shown that In/sub 1-x/Ga/sub x/As/In/sub 0.52/Al/sub 0.48/As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 mu m. For example, a change in refractive index of -0.5% at about 1.55 mu m will facilitate an intersectional angle of more than 10 degrees in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.<>  相似文献   
992.
This paper evaluates experimentally the performance of a novel axial velocity estimator, the 2D autocorrelator, and its Doppler power estimation counterpart, the 2D zero-lag autocorrelator, in the context of ultrasound color flow mapping. The evaluation also encompasses the well-established 1D autocorrelation technique for velocity estimation and its corresponding power estimator (1D zero-lag autocorrelator), to allow performance comparisons under identical conditions. Clutter-suppressed in vitro data sets from a steady-flow system are used to document the effect of the range gate and ensemble length, noise level and angle of insonation on the precision of the velocity estimates. The same data sets are used to examine issues related to the estimation of the Doppler signal's power. The first-order statistics of power estimates from regions corresponding to flow and noise are determined experimentally and the ability of power-based thresholding to separate flow signals from noise is characterized by means of ROC analysis. In summary, the results of the in vitro evaluation show that the proposed 2D-autocorrelation form of processing is consistently better than the corresponding 1D-autocorrelation techniques, in terms of both velocity and power estimation. Therefore, given their relatively modest implementation requirements, the 2D-autocorrelation algorithms for velocity and power estimation appear to represent a superior, yet realistic, alternative to conventional Doppler processing for color flow mapping  相似文献   
993.
Demonstrates that although standard paraxial and wide-angle vector field propagation techniques lead to divergences for sufficiently small grid-point spacings and large refractive index differences, stability may be restored through either certain Pade approximates to the propagation operator or suitable boundary conditions. The authors also introduce a novel alternating directional implicit method applicable to less divergent discretizations of the vector wave equation  相似文献   
994.
The crystal structure of CaMgGeO4 is described. CaMgGeO4, Mr = 200.9, orthorhombic, Pnam, A = 11.285(5) Å, B = 5.016(2) Å, C = 6.435(2) Å, V = 364.36 Å3, Dx = 3.664 Mg/m3.λ(MoKa = 0.71069 Å, F(000) = 384, room temperature, final R = 0.045 for 1752 observed reflections. The structure is isomorphous with CaMgSiO4 (monticellite).  相似文献   
995.
Isochronous stress-strain relationships and long term creep performance for unfilled and hydroxyapatite filled polyethylene composites have been studied. The tests were carried out in a buffered (pH=7.5) Ringer's solution at 37°C. It was observed that the inclusion of hydroxyapatite does not remove the non-linear viscoelasticity of polyethylene. The creep resistance is found to increase with increase in volume fraction of hydroxyapatite. The creep failure of composites at long times can occur due to debonding of the interface.  相似文献   
996.
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%  相似文献   
997.
The dimensional changes of liver sections during the course of processing with glycol methacrylate (GMA) or with ethanol are described. Tissue processing with ethanol served as a control. During prolonged processing steps (24 h each), linear shrinkage of tissue specimens dehydrated with GMA at room temperature was 13.2%. Subsequent infiltration with GMA resulted in trivial swelling, and polymerization in slight shrinkage (2.3%). In comparison, processing with cold GMA resulted in shrinkage during dehydration (about 10.8%), a slight swelling in pure GMA, followed by shrinkage during polymerization (2.2%). Short routine processing schedules resulted in similar shrinkage/swelling patterns, although precise values differed slightly. In all experiments, ethanolic dehydration resulted in smaller dimensional tissue changes than did GMA dehydration. The dimensional changes of tissue sections during stretching on water, mounting and drying compensated for the major part of the shrinkage manifested during processing.  相似文献   
998.
Correlations between the macroscopic bulk polymer properties storage modulus (E′) and loss modulus (E″) and the microscopic property of cross-polarization as represented by the time constant TCH have been established for a series of polyurethane elastomers. The dependence of E′, E″, and TCH as a function of molecular weight, rigid domain concentration, and temperature are graphically presented as a series of log plots. An experimental relationship is presented that shows that the distribution of motions of the flexible domains appears to be the major factor in the success of these correlations.  相似文献   
999.
The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain  相似文献   
1000.
The authors report on the development of a comprehensive self-consistent thermal-electrical model of etched-well vertical-cavity surface-emitting lasers. The analysis provides valuable insight into distribution of heat sources in these devices. Two-dimensional current- and heat-spreading analysis is used to determine in a self-consistent manner a realistic distribution of heat sources in etched-well vertical-cavity surface-emitting lasers. Strong nonuniformities of heat-source and temperature distributions are revealed. The relative contributions of various heat sources are evaluated. The Joule heating of the p-AlGaAs cladding layer is identified as a major cause of intense heating above threshold.<>  相似文献   
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