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41.
D. A. Mirzaev N. I. Vorob’ev O. K. Tokovi D. V. Shaburov E. A. Fominykh 《Russian Metallurgy (Metally)》2006,(1):38-41
The solutions to a differential equation for the problem of heating of a cylinder in a medium with a fixed temperature are used to obtain equations for estimating the change in the hydrogen concentration in forgings from data on the hydrogen concentration at the cylinder axis or on the average bulk hydrogen concentration. Similar equations are also obtained for forgings having square cross sections. The calculation demonstrates that, for the case of a twofold decrease in the hydrogen concentration in a forging, the calculated times of annealing of a cylindrical forging differ by three times. 相似文献
42.
P. B. Lovyrev A. I. Lavrov V. A. Babkin A. N. Aminov S. M. Melekhin Yu. P. Kazantsev P. M. Korol’kov 《Metallurgist》2006,50(3-4):152-157
Specifications require that all the welds in 12-m-diam. decomposers with a capacity of 3600 m3 be subjected to high-temperature tempering before going into service in order to alleviate the stresses from the welding
operation. Specialists at the organizations VNIIPTkhimnefteapparatury and VNIImontazhspetsstroi have proposed out-of-furnace
volumetric (complete) of the assembled decomposer with the use of special heaters. The use of this heating method has shortened
assembly operations while providing the welds with a highquality heat treatment and reducing the stresses overall (including
welding stresses, stresses from assembly of the decomposer, etc.) The technology ensures uniform heating of the housing of
the decomposer and provides for close control over the process. The experience gained in heat-treating decomposers can also
be used in the construction of other containers that come into contact with corrosive media.
__________
Translated from Metallurg, No. 3, pp. 61–64, March, 2006. 相似文献
43.
V. A. Babenko V. V. Grigor’yants I. P. Shilov 《Journal of Communications Technology and Electronics》2006,51(6):618-630
Basic definitions related to the main electrodynamic characteristics of surface space-charge waves are formulated. These characteristics and their relationships with the geometric dimensions of guiding structures (a dielectric cylinder and a planar metal-dielectric waveguide) are determined. 相似文献
44.
45.
The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears. 相似文献
46.
A. A. Andronov Yu. N. Nozdrin A. V. Okomel’kov V. S. Varavin R. N. Smirnov D. G. Ikusov 《Semiconductors》2006,40(11):1266-1274
The experimental data on observation of spontaneous and stimulated emission from thin epitaxial CdxHg1?x Te films optically pumped by Nd: YAG laser radiation are reported. A simple theoretical model is suggested to describe the initiation of population inversion under these conditions. The parameters realized under the experimental conditions are theoretically estimated. 相似文献
47.
M. J. O’Sullivan C. G. Walker M. L. O’Sullivan T. D. Thompson A. B. Philpott 《Telecommunication Systems》2006,33(4):353-376
The problem of designing fibre-optic networks for local-access telecommunications generates (at least) three non-trivial subproblems.
In the first of these subproblems one must determine how many fibre-optic cables (fibres) are required at either end of a
street. In the next subproblem a minimum-cost network must be designed to support the fibres. The network must also provide
distinct paths from either end of the street to the central exchange(s). Finally, the fibre-optic cables must be placed in
protective covers. These covers are available in a number of different sizes, allowing some flexibility when covering each
section of the network. In this paper we describe a dynamic programming (DP) formulation for finding a minimum-cost (protective)
covering for the network (the third of the subproblems). This problem is a generalised set covering problem with side constraints
and is further complicated by the introduction of fixed and variable welding costs. The DP formulation selects covers along
each arc (in the network), but cannot exactly model the fixed costs and so does not guarantee optimality. We also describe
an integer programming (IP) formulation for assessing the quality of the DP solutions. The cost of the networks constructed
by the IP model is less than those designed using the DP model, but the saving is not significant for the problems examined
(less than 0.1%). This indicates that the DP model will generally give very good solutions. Furthermore, as the problem dimensions
grow, DP gives significantly better solution times than IP. 相似文献
48.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
49.
D. G. Pavel’ev N. V. Demarina Yu. I. Koshurinov A. P. Vasil’ev E. S. Semenova A. E. Zhukov V. M. Ustinov 《Semiconductors》2004,38(9):1105-1110
Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region
(1–10 μm2) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (1018 cm−3) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10−7 Ω cm2 at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later
on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K).
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146.
Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov. 相似文献
50.
Polycrystalline Cu(In,Ga)Se2 (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction
study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The
films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and
a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se2 type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can
be used for optimization of the CIGS film technology. 相似文献