化工企业环境因素的评价

化工企业环境因素评价是建立环境管理体系的核心任务，化工企业生产过程的特点决定了其环境因素数量多、环境影响大、识别评价难、控制难度大。本文介绍了化工企业环境因素评价的技术方法和过程，可以为提高环境因素评价的科学性、客观性和充分性提供参考。     

Extended analysis of ground impedance measurement using the fall-of-potential method

An extended analysis of ground impedance measurement using the fall-of-potential method will be presented. An interesting curve that represents the exact locations of the potential probe when the potential and current probes are in different directions is obtained for the first time. Curves representing measurement error are also presented for the case when the potential probe is placed in locations where the correct ground impedance cannot be measured. A similar analysis for ground impedance measurements in multilayer soils is also discussed. The study presented in this paper has extended the theory of the conventional fall-of-potential method and the results obtained can serve as a practical guide for ground impedance measurements made using this method.     

我国建筑涂料技术进步简评

从以下诸方面简述我国建筑涂料的技术进步:⑴新品种涂料的研制开发;⑵加强对配套材料及施工技术的研究;⑶超细填料在涂料中的应用;⑷计算机自动配色技术;⑸产品标准的修订;⑹建筑涂料的实用范围扩大。     

标准椅全身计数器对不同年龄组均匀体模源全能峰效率的刻度

本文介绍了用标准液体源均匀充入聚氯乙烯制的体模,刻度标准椅全身计数器〔φ8″×4″(NaI)〕的方法和结果。分别就代表6个年龄组的体模,测定了标准椅全身计数器对5种能量(364,637,898,1460和1836keV)γ射线的全能峰效率;给出了全能峰效率与γ射线能量和被测对象体重的关系曲线。     

浅谈高层建筑火灾扑救

前言伴随着我国经济建设的迅速发展 ,高层建筑已在各大城市大量涌现。大量的高层建筑 ,既为城市的经济发展增添了繁荣的氛围 ,同时又给消防安全提出了新的课题。近年来 ,高层建筑所引发的火灾已成为全世界关注的一个难题。据统计 ,1999年全国共发生高层建筑火灾 112 2起 ,而 2 0 0 0年则猛增到 184 32起。因此 ,加强对高层建筑火灾扑救的研究 ,对缔造良好的消防环境 ,确保经济和社会稳定至关重要。本文仅是作者的一些浅见 ,希望能有可取之处与大家分享。18世纪末至 19世纪 ,欧洲和美国的的工业革命带来了生产力的发展与经济的繁荣。这个时期…     

转移法色交换

将图Ｇ的着色由一种变为中一种，通常用Ｋｅｍｐｅ法以交换。但是，对于某些情况，用此法无效。针对这个问题，本文提出了一种转移法色交换，它适用于平面图着色，方法直观，清晰且有效。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

New efficient designs for XOR and XNOR functions on the transistorlevel

Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation